Pixelligent Technologies LLC

USA As Represented by Secretary of the Navy

University System of Maryland

Erin F Fleet

Gregory D Cooper

Zhiyun Chen

Andrew Case

Serpil Gönen

Sojiphong Chatraphorn

Frederick Charles Wellstood

Dean A Scribner

Guy Beadie

John R Ackerman

Andrey V Kanaev

Fred Wellstood

Semiconductor nano-sized particles possess unique optical properties, which make them ideal candidates for various applications in the UV photolithography. In this patent several such applications, including using semiconductor nano-sized particles or semiconductor nano-sized particle containing materials as highly refractive medium in immersion lithography, as anti-reflection coating in optics, as pellicle in lithography and as sensitizer in UV photoresists are described.

Applications of semiconductor nano-sized particles for photolithography

A method of making an achromatic gradient index singlet lens comprising utilizing a gradient index material with a curved front surface in which light does not follow a straight line as it travels through the material and wherein different color rays traverse different curved paths, utilizing the natural dispersion of the curved front surface as a strong positive lens, and developing a weakly diverging GRIN distribution within the lens to balance the chromatic aberrations of the curved front surface.

Achromatic gradient index singlet lens

A method and system is provided for performing high-resolution image assembly regardless of observed scene content. An imaging system, including a focal plane array and lenslet array can be calibrated to account for subimage shifts. A calibration module can determine the subimage shifts by calculating an average point source position reference point coordinates for each of the subimages, and then determining the difference between the average point source position and the reference point coordinates for each subimage. The imaging system can then be calibrated utilizing the subimage shifts for each of the plurality of subimages. Finally, an assembly module can perform a high-resolution image assembly with the calibrated imaging system.

Scene independent method for image formation in lenslet array imagers

Advanced techniques for programmable photolithography provide enhanced resolution and can image features smaller than the single shutter intensity profile, i.e., sub-pixel resolution. Patterns are built up by multiple exposures with relative movement of the mask and resist so as to place each shape from the library where it is needed on the resist. Electro-Optic phase shifting material may be applied to the shutter so as to adjust the single shutter intensity profile, or to adjust the interaction of adjacent shutters. An apodizing mask may be used to engineer the wavefronts of the light striking the resist to achieve better resolution.

Advanced exposure techniques for programmable lithography

Nano-particles are provided with control circuitry to form a programmable mask. The optical characteristics of the nano-particles change to provide patterned light. Such patterned light can be used for example to expose a photoresist on a semiconductor wafer for photolithography.

Programmable photolithographic mask based on semiconductor nano-particle optical modulators

Semiconductor nano-particles, due to their specific physical properties, can be used as reversible photo-bleachable materials for a wide spectrum, from far infrared to deep UV. Applications include, reversible contrast enhancement layer (R-CEL) in optical lithography, lithography mask inspection and writing and optical storage technologies.

Reversible photobleachable materials based on nano-sized semiconductor particles and their optical applications

Advanced techniques for programmable photolithograhy provide enhanced resolution and other aspects of a photolithography system. The pseudo-inverse of a matrix is applied to the results of a calculation to control exposure energies.

A scanning SQUID microscope for acquiring spatially resolved images of physical properties of an object includes a SQUID sensor arranged in perpendicular to the plane of the object under investigation for detecting tangential component of the magnetic field generated by the object. During scanning of the SQUID sensor over the object under investigation, the position signal from a position interpreting unit, as well as relevant output signals from the SQUID sensor are processed by a processing unit which derives from the data, spatially resolved images of the physical properties of the object. The specific orientation of the SQUID sensor with respect to the plane of the object permits an enlarged area of the SQUID chip on which the modulation and feedback line can be fabricated in the same technological process with the SQUID sensor. Additionally, larger contact pads afforded provide for lower contact resistance and ease in forming contact with bias and read-out wires.

Scanning SQUID microscope with improved spatial resolution

Method and apparatus for exposing photo resists using programmable masks increases imaging resolution to provide fully dense integrated circuit patterns made of very small features on photoresist-coated silicon wafers by optical lithography. Small features are created by means of overlap exposure with either programmable or conventional masks. Blocking photoresists responding differently to two different wavelengths of light, two-color photoresists requiring two wavelengths of light to change solubility, and two-photon photoresists which change solubility only by absorbing two photons at a time may be used.

Method and apparatus for exposing photoresists using programmable masks

A method of, an and apparatus for, creating an image of currents flowing through current paths in a microelectronic circuit such that the image of the currents has improved spatial resolution using filters. The filters increase the spatial resolution and eliminate noise and edge artifacts in magnetic field and electric field images of electronic circuits. In accordance with the method, a magnetic field image is created with a scanning SQUID microscope. A magnetic inversion technique is then used to convert the magnetic field image into a current density image. The current density image is filtered based upon known restrictions on the wiring geometry of the microelectronic circuit being imaged. The technique can also be applied to convert electric fields of a circuit from a scanning single electron transistor microscope into images of the voltage levels on the wires in the circuit.

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Springfield, VA, United States of America

Erin F Fleet