Sumco Corporation

Eriko Kitahara

Ken Kitahara

Toshiaki Sudo

Tadahiro Sato

Hiroshi Kishi

Masanori Fukui

Takeshi Fujita

Tomokazu Katano

Hideki Fujiwara

Yasunobu Shimizu

Keiichi Takanashi

Takahiro Abe

Kouta Hasebe

Koichi Suzuki

Masami Ohara

Makiko Kodama

Makiko Hinooka

Kazushi Ousyuya

Fumie Yoshida

Shuji Tobita

Takashi Watanabe

Akihiro Aiba

A quartz glass crucible has, from an inner surface side toward an outer surface side of the crucible, an inner transparent layer, a bubble layer, an outer transparent layer, and a crystallization accelerator-containing layer. An outer transition layer where a bubble content decreases from the bubble layer toward the outer transparent layer is provided at a boundary between the bubble layer and the outer transparent layer, and a thickness of the outer transition layer is 0.1 mm or more and 8 mm or less.

Quartz glass crucible, manufacturing method therefor, and method for manufacturing silicon single crystal

An infrared transmissivity measurement method is for measuring an infrared transmissivity of a quartz glass crucible which includes a transparent layer made of quartz glass that does not contain bubbles, a bubble layer formed outside the transparent layer and made of quartz glass containing bubbles, and a semi-molten layer formed outside the bubble layer and made of raw material silica powder solidified in a semi-molten state. The infrared transmissivity measurement method includes processing an outer surface of the quartz glass crucible formed by the semi-molten layer to lower a surface roughness of the outer surface; and measuring an infrared transmissivity of the quartz glass crucible based on infrared light passing through the outer surface after processing the outer surface.

Infrared transmissivity measurement method of quartz glass crucible

A quartz glass crucible () has a structure wherein a peak of a distribution of a total concentration of Na, K, and Ca in a depth direction from an inner surface () of the crucible is present at a position deeper than the inner surface (). In an exemplary embodiment, the quartz glass crucible is capable of improving the yield of a silicon single crystal by suppressing peeling-off of brown rings.

Quartz glass crucible and manufacturing method thereof

A quartz glass cruciblehaving a cylindrical side wall portion, a bottom portion, and a corner portionconnecting the side wall portionand the bottom portionto each other includes a transparent layermade of quartz glass, and a bubble layermade of quartz glass and formed outside the transparent layer. A ratio of an infrared transmittance of the corner portionat a maximum thickness position of the corner portionto an infrared transmittance of the side wall portionis 0.3 or more and 0.99 or less, and an absolute value of a rate of change in infrared transmittance in a height direction along a wall surface of the crucible from a center of the bottom portiontoward an upper end of the side wall portionis 3%/cm or less.

Quartz glass crucible

A quartz glass cruciblehaving a cylindrical side wall portion, a bottom portion, and a corner portionincludes a transparent layeras an innermost layer made of quartz glass, a semi-molten layeras an outermost layer made of raw material silica powder solidified in a semi-molten state, and a bubble layermade of quartz glass interposed therebetween. An infrared transmissivity of the corner portionin a state where the semi-molten layeris removed is 25 to 51%, the infrared transmissivity of the corner portionin the state where the semi-molten layeris removed is lower than an infrared transmissivity of the side wall portion, and the infrared transmissivity of the side wall portionin the state where the semi-molten layeris removed is lower than an infrared transmissivity of the bottom portion

Quartz glass crucible, manufacturing method of silicon single crystal using the same, and infrared transmissivity measurement method and manufacturing method of quartz glass crucible

A measurement method and a measurement apparatus are capable of measuring the transmittance of a quartz crucible accurately. A measurement method includes: emitting a parallel light from a light source disposed on a side of one wall surface of a quartz crucible toward a predetermined measurement point of the quartz crucible; measuring reception levels of light transmitted through the quartz crucible at a plurality of positions by disposing a detector at the plurality of positions on a circle centered around an exit point of the parallel light on the other wall surface of the quartz crucible; and calculating a transmittance of the quartz crucible at the predetermined measurement point based on a plurality of the reception levels of the transmitted light measured at the plurality of positions.

Method and apparatus for measuring transmittance of quartz crucible

In an exemplary embodiment, a quartz glass crucibleincludes: a cylindrical crucible bodywhich has a bottom and is made of quartz glass; and crystallization-accelerator-containing coating filmsA andB which are formed on surfaces of the crucible bodyso as to cause crystallization-accelerator-enriched layers to be formed in the vicinity of the surfaces of the crucible bodyby heating during a step of pulling up a silicon single crystal by a Czochralski method. The quartz glass crucible is capable of withstanding a single crystal pull-up step undertaken for a very long period of time, such as multi-pulling, and a manufacturing method thereof.

Buckling of a vitreous silica crucible or fall of a sidewall into the crucible is effectively suppressed. Furthermore, dislocations in a silicon single crystal are suppressed to enhance the yield of the single crystal. The vitreous silica crucible is used to pull single-crystal silicon and includes the cylindrical sidewall having an upward-opening rim, a mortar-shaped bottom including a curve, and a round portion connecting the sidewall and the bottom. The round portion is provided in such a manner that the curvature of the inner surface thereof is gradually increased from the sidewall toward the bottom in a section passing through the rotation axis of the vitreous silica crucible.

Silica glass crucible and method for producing monocrystalline silicon using same

A vitreous silica crucible used to pull up silicon single crystal includes: a cylindrical straight body portion, a corner portion formed at a lower end of the straight body portion, and a bottom portion connected with the straight body portion via the corner portion, wherein the vitreous silica crucible further comprises: an opaque outer layer enclosing bubbles therein; and a transparent inner layer from which bubbles are removed, wherein the residual distortion's distribution obtained by measuring the silica glass's inner surface in a non-destructed state has an optical path difference which is 130 nm or less, which residual distortion's distribution is measured using a distortion-measuring apparatus which converts a linearly polarized light into circularly polarized light and then irradiates the crucible's wall.

Vitreous silica crucible and evaluation method of the same

A destructive inspection method of a vitreous silica crucible for pulling a silicon single crystal evaluates a crack state of an inner surface of the vitreous silica crucible supported by a graphite susceptor when a load is instantaneously applied to at least one point on the inner surface via an automatic center punch while pushing the tip portion of the automatic center punch against the inner surface. The destructive inspection method can inspect the vitreous silica crucible under conditions as close to the actual conditions of use as possible.

Destructive inspection method and quality determination method for vitreous silica crucible

A vitreous silica crucible includes: a substantially cylindrical straight body portion having an opening on a top end and extending in a vertical direction; a curved bottom portion; and a corner portion connecting the straight body portion with the bottom portion and a curvature of which is greater than that of the bottom portion, wherein an inner surface of the crucible has a concavo-convex structure in which groove-shaped valleys are interposed between ridges, and an average interval of the ridges is 5-100 &#x3bc;m.

Vitreous silica crucible

A method for pulling silicon single crystal includes a process of placing a molded body between a susceptor's inner surface and a crucible's outer surface. The molded body is formed based on three-dimensional data of the inner surface shape of the susceptor which can hold the vitreous silica crucible and three-dimensional data of the crucible so as to make the susceptor's central axis and the crucible's central axis substantially aligned when it is placed between the susceptor's inner surface and the crucible's outer surface.

Method for pulling silicon single crystal

In an embodiment, a vitreous silica crucibleincludes a cylindrical straight body portion, a corner portionformed at lower end of the straight body portion, and a bottom portionconnected with the straight body portionvia the corner portion. Moreover, the vitreous silica crucibleincludes a bubble-containing opaque layerconstituting an outer layer, and a bubble-free transparent layerconstituting an inner layer. A boundary surface, between the opaque layerand the transparent layerin at least the straight body portion, forms a periodic wave surface in a vertical direction. The vitreous silica crucible can suppress deformation under high temperature.

Vitreous silica crucible and method for manufacturing the same

In an embodiment, a distortion-measuring apparatus for measuring a distortion distribution of an entire vitreous silica crucible in a non-destructive way includes: a light source; a first polarizerand a first quarter-wave platedisposed between the light sourceand an outer surface of a vitreous silica crucible wall; a cameradisposed inside of a vitreous silica crucible; a camera control mechanismconfigured to control a photographing direction of the camera; a second polarizerand a second quarter-wave platedisposed between the cameraand an inner surface of the vitreous silica crucible wall. An optical axis of the second quarter-wave plateinclines 90 degrees with respect to the first quarter-wave plate

Vitreous silica crucible and distortion-measuring apparatus for the same

The present invention provides a method for evaluating a vitreous silica crucible which can measure a three-dimensional shape of the inner surface of the crucible in a non-destructive manner. According to the present invention, A method for evaluating a vitreous silica crucible, including the steps of: moving an internal ranging section along an inner surface of the vitreous silica crucible in a contactless manner; measuring a distance between the internal ranging section and the inner surface as a distance from the inner surface, by subjecting the inner surface of the crucible to irradiation with laser light and then detecting a reflected light from the inner surface, the laser light being emitted from the internal ranging section in an oblique direction with respect to the inner surface, and the measurement being conducted at a plurality of measuring points along a course of a movement of the internal ranging section; and obtaining a three-dimensional shape of the inner surface of the crucible, by associating three-dimensional coordinates of each of the measuring points with the distance from the inner surface, is provided.

Growing community of inventors

Akita, Japan

Eriko Kitahara