Sony Semiconductor Solutions Corporation

Eriko Kato

Mamoru Sato

Akihiko Kato

To reduce the number of wirings through which transmission and reception are made between chips. The solid-state imaging device includes a first substrate including a pixel array unit in which a plurality of pixels is arranged, each of the plurality of pixels including a photoelectric conversion unit, and the first substrate includes a first wiring through which an imaging pixel signal is transmitted, the imaging pixel signal being read from two or more of the pixels arranged in a first direction in the pixel array unit, a second wiring through which a reset voltage for initializing the first wiring is supplied, and a first switching circuit configured to switch whether or not to short-circuit the first wiring and the second wiring.

Solid-state imaging device and electronic instrument

A selection pixel where signal readout is performed and a reference pixel where signal readout is not performed are arranged in a pixel array section, and an amplification transistor of the selection pixel and an amplification transistor of the reference pixel each source electrode of which is connected in common to a common wire are connected with a constant current source via the common wire to form a differential amplification circuit. Then, a bypass control section which selectively establishes connection between the constant current source and a differential output node of the differential amplification circuit and limits a voltage of the differential output node to a predetermined voltage by causing a bypass current to flow between the constant current source and the differential output node, and a current path for bypass current that supplies the bypass current to the constant current source through the pixel array section are included.

Imaging device and electronic equipment

A light detecting device includes: one or more switch transistors, a first pixel including a first floating diffusion region coupled to a first photoelectric converter through a first transfer transistor, and a first amplification transistor coupled to the first floating diffusion region, a second pixel including a second floating diffusion region coupled to a second photoelectric converter through a second transfer transistor, and a second amplification transistor coupled to the second floating diffusion region, and a third pixel including a third floating diffusion region coupled to a third photoelectric converter through a third transfer transistor, and a third amplification transistor coupled to the third floating diffusion region. A pixel signal is differentially amplified by the first and third amplification transistors. The first and second floating diffusion regions are selectively connected to each other via one of the one or more switch transistors.

Growing community of inventors

Kanagawa, Japan

Eriko Kato