Sandisk Technologies Inc.

Erika Kanezaki

Ryo Nakamura

Kotaro Jinnouchi

Yosuke Nosho

Satoshi Kamata

A method of forming a NAND flash memory includes forming a conductive area in a substrate, the conductive area extending along a direction that is perpendicular to the direction along which NAND strings extend, the conductive area connecting terminals of NAND strings. Discrete contact areas in the conductive area are contacted by discrete contact plugs, each contact plug contacting a corresponding contact area in the conductive area.

Common source line with discrete contact plugs

A dielectric layer extending over a substrate has alternating first and second trenches extending in a first direction. The first trenches have a first shape in cross section along a plane that is perpendicular to the first direction and the second trenches have a second shape in cross section along the plane. Bit lines are located in at least the first trenches.

Alternating sidewall assisted patterning

A method of forming a NAND flash memory includes forming a dielectric layer over NAND strings separated by shallow trench isolation structures, forming an opening in a mask layer over the dielectric layer, the opening extending over contact areas, the opening having a first width at first locations over contact areas and having a second width at second locations over shallow trench isolation structures, the second width being less than the first width.

Growing community of inventors

Yokkaichi, Japan

Erika Kanezaki