Koninklijke Philips Corporation N.v.

Erik Van Der Vegt

Benoit Froment

Phillipe Gayet

At least one layer of a dielectric material is deposited on a copper track covered with an encapsulation layer . A cavity is etched in the layer of dielectric material at the location of the future vertical connection. At least one protective layer is deposited in said cavity to preclude diffusion of copper . The protective layer at the bottom of the cavity is subjected to an anisotropic etching treatment and also the encapsulation layer is subjected to etching, whereafter the cavity is filled with copper. The copper particles pulverized during etching the encapsulation layer do not contaminate the dielectric material

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Grenoble, France

Erik Van Der Vegt