Institutt for Energiteknikk

Universidad Complutense De Madrid

Sunphade as

Erik Stensrud Marstein

Smagul Karazhanov

Halvard Haug

Su Zhou

Sean Erik Foss

Fredrik Aleksander Martinsen

Junjie Zhu

José Montero Amenedo

Chunlan Zhou

Wenjing Wang

Maria Taeno Gonzalez

Miguel Garcia Tecedor

Trygve Tveiterås Mongstad

Chang Chuan You

Javier Piqueres De Noriega

Geraldo Cristian Vasquez Villanueva

David Maestre Varea

Jose Maria Gonzalez Calbet

Ana Cremades Rodriguez

Julio Ramirez Castellanos

Chang Chaun You

Javier Piqueras De Noriega

Julio Ramirez Castellano

Jose Maria Gonsalez Clabet

Method for producing a photochromic material and a component including the photochromic material, where the method comprises the steps of:-first the formation on a substrate of a layer of an essentially oxygen free metal hydride with a predetermined thickness using a physical vapor deposition process; and -second exposing the metal hydride layer to oxygen where the oxygen reacts with the metal hydride, resulting in a material with photochromic properties.

Fabrication of photochromic device

The present invention relates to a metal hydride device having a variable transparency, comprising a substrate, at least one layer including a photochromic yttrium hydride having a chosen band gap, and a capping layer at least partially positioned on the opposite side of the photochromic yttrium hydride layer from the substrate, said capping layer being essentially impermeable to hydrogen and oxygen.

Transparent photochromic device

A relevant technological challenge is the low cost and abundant materials development for silicon surface passivation for applications in optoelectronic devices, in particular in solar cells by scalable industrial methods. In the present invention, a new hybrid material comprising PEDOT:PSS and transparent conducting oxide nanostructures is developed and a method is proposed to fabricate the composite material that passivates well the silicon surface to be used by means of a thin composite film of thickness below 200 nm.

Organic-inorganic hybrid material and method for silicon surface passivation

A method for manufacturing a passivation stack on a crystalline silicon solar cell device. The method includes providing a substrate comprising a crystalline silicone layer such as a crystalline silicon wafer or chip, cleaning a surface of the crystalline silicon layer by removing an oxide layer at least from a portion of one side of the crystalline silicon layer, depositing, on at least a part of the cleaned surface, a layer of silicon oxynitride, and depositing a capping layer comprising a hydrogenated dielectric material on top of the layer of silicon oxynitride, wherein the layer of silicon oxynitride is deposited at a temperature from 100&#xb0; C. to 200&#xb0; C., and the step of depositing the layer of silicon oxynitride includes using NO and SiHas precursor gasses in an Nambient atmosphere and depositing silicon oxynitride with a gas flow ratio of NO to SiHbelow 2.

Passivation stack on a crystalline silicon solar cell

Growing community of inventors

Skedsmokorset, Norway

Erik Stensrud Marstein