Koninklijke Philips Corporation N.v.

Nxp B.v.

Technische Universiteit Eindhoven

Fei Comapny

Philips Lumileds Lighting Company LLC

Erik Petrus Antonius Maria Bakkers

Abraham Rudolf Balkenende

Louis Felix Feiner

Prabhat Agarwal

Martijn Henri Richard Lankhorst

Jozef Everardus Maria Haverkort

Pierre Hermanus Woerlee

Erwin Hijzen

Paul Van Der Sluis

Freddy Roozeboom

Petrus Hubertus Cornelis Magnee

Godefridus Adrianus Maria Hurkx

Stefan Peter Grabowski

Robertus Theodorus Fransiscus Van Schaijk

Michiel Jos Van Duuren

Antonio Calvosa

Simone Assali

Melanie Maria Hubertina Wagemans

Ilaria Zardo

Niels De Jonge

Johannes Fransiscus Cornelis Maria Verhoeven

Silvana Botti

Friedhelm Bechstedt

Alain Dijkstra

Elham Fadaly

The invention relates to a light-emitting component comprising a light-emitting section consisting of a Hex-SiGecompound material, said Hex-SiGecompound material having a direct band gap for emitting light. The invention also pertains to a light-absorbing component comprising a light-absorbing section consisting of a Hex-SGecompound material, said Hex-SiGecompound material having a direct band gap for absorbing light.

Light-emitting or light-absorbing component

Growth of GaP and III-V GaP alloys in the wurtzite crystal structure by vapor phase epitaxy (VPE) is provided. Such material has a direct band gap and is therefore much more useful for optoelectronic devices than conventional GaP and GaP alloys having the zincblende crystal structure and having an indirect band gap.

Direct band gap wurtzite semiconductor nanowires

The electric device () according to the invention comprises a layer () of a memory material which has an electrical resistivity switchable between a first value and a second value. The memory material may be a phase change material. The electric device () further comprises a set of nanowires (NW) electrically connecting a first terminal () of the electric device and the layer () of memory material thereby enabling conduction of an electric current from the first terminal via the nanowires (NW) and the layer () of memory material to a second terminal () of the electric device. Each nanowire (NW) electrically contacts the layer () of memory material in a respective contact area. All contact areas are substantially identical. The method according to the invention is suited to manufacture the electric device () according to the invention.

Electric device with a layer of conductive material contacted by nanowires

The invention relates to a semiconductor device () with a semiconductor body () comprising a bipolar transistor with an emitter region, a base region and a collector region () of, respectively, a first conductivity type, a second conductivity type opposite to the first conductivity type, and the first conductivity type. One of the emitter or collector regions () comprises a nanowire (). The base region () has been formed from a layer () at the surface of the semiconductor body (); the other one () of the emitter or collector regions () has been formed in the semiconductor body () below the base region (). The emitter or collector region () comprising the nanowire () has been provided on the surface of the semiconductor body () such that its longitudinal axis extends perpendicularly to the surface.

Semiconductor device and method of manufacturing the same

The method of fabricating semiconducting nanowires having a desired wire diameter includes providing pre-fabricated semiconducting nanowires, at least one pre-fabricated nanowire having a wire diameter larger than the desired wire diameter (d); and reducing the wire diameter of the at least one pre-fabricated nanowire by etching. The etching is induced by light which is absorbed by the at least one pre-fabricated nanowire. The spectrum of the light is chosen such that the absorption of the at least one pre-fabricated nanowire is significantly reduced when the at least one pre-fabricated nanowire reaches the desired wire diameter.

Fabricating a set of semiconducting nanowires, and electric device comprising a set of nanowires

A semiconductor device is provided in which energy band gap can be electrically varied. The device includes nanowires embedded in a material that exhibits a deformation when properly addressed, e.g., a piezoelectric material such as lead zirconate titanate (PZT), aluminum nitride (A1N) or zinc oxide (Zn0). The nanowires can be reversibly strained by applying a local deformation to the piezoelectric material by applying a voltage to the material. The resulting band gap variation can be utilized to tune the color of the light emitted from e.g., a LED or a laser. Further, contact resistance in semiconductor junctions can be controlled, e.g., for use in memories and switches.

Semiconductor device with tunable energy band gap

A method of manufacturing an electric device including providing a body with a resistor of a phase change material being changeable between a first phase and a second phase, the resistor having a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance different from the first electrical resistance when the phase change material is in the second phase. The method further includes connecting the resistor between first and second conductors.

Electric device with nanowires comprising a phase change material

A tunable radiation emitting semiconductor device includes at least one elongated structure at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The structure is operable to emit light radiation in response to a current flow therethrough. Moreover, the elongated structure is fabricated to be sufficiently narrow for quantum confinement of charge carriers associated with the current flow to occur therein. Furthermore, the structure further includes an electrode arrangement for applying an electric field to the elongated structure for causing bending of its bandgap characteristic for modulating a wavelength of the light radiation emitted in operation from the structure in response to the current flow therethrough.

Tunable radiation emitting semiconductor device

The present invention relates to a semiconductor device in which energy band gap can be reversibly varied. An idea of the present invention is to provide a device, which is based on a semiconducting material () in mechanical contact with a material that exhibits a reversible volume change when properly addressed, e.g. a phase change material (). The device can, for example, be implemented in light emitting, switching and memory in applications. The semiconducting material can be reversibly strained by applying a local volume expansion to the phase change material. The resulting band gap variation of the semiconducting material can be utilized to tune the color of the light emitted from e.g. an LED or a laser. In other fields of application, contact resistance in semiconductor junctions can be controlled, and this feature is highly advantageous in memories and switches.

The invention provides an electron source suitable for use in a charged-particle apparatus, in which source a beam of electrons can be extracted from an electrode that is subjected to at least one of an electric potential, thermal excitation and photonic excitation, whereby at least part of the electrode comprises semiconductor material having a conduction band that is quantized into discrete energy levels. Such a source enjoys a relatively low energy spread, typically much smaller than that of a Cold Field Emission Gun (CFEG). The semiconductor material may, for example, comprise a semiconductor nanowire including InAs and GaInAs.

Electron source, and charged-particle apparatus comprising such an electron source

In the method, semiconductor substrates are etched to provide nanowires, said substrates comprising a first layer of a first material and a second layer of a second material with a mutual interface, which first and second materials are different. They may be different in the doping type. Alternatively, the main constituent of the material may be different, for example SiGe or SiC versus Si, or InP versus InAs. In the resulting nanowires, the interface is atomically sharp. The electronic devices having nanowires between a first and second electrode accordingly have very good electroluminescent and optoelectronic properties.

Growing community of inventors

Eindhoven, Netherlands

Erik Petrus Antonius Maria Bakkers