Johann Wolfgang Goeth-Universität Frankfurt A.m.

Johann Wolfgang Goethe-universitat Frankfurt Am Main

Bergische Universität Wuppertal

Erik Oejefors

Ullrich Pfeiffer

Hartmut Roskos

Alvydas Lisauskas

Hartmut G Roskos

The invention relates to devices comprising field effect transistors to detect the power of an electromagnetic high frequency signal V. According to the prior art, the high frequency signal is coupled into the gate G and via a capacitor Cinto the drain D of the field effect transistor FET, the gate G being biased with a direct voltage Vwhich corresponds to the threshold value of the FET transistor. The resulting current at the source S contains a direct current portion Iwhich is proportional to the square of the amplitude of the high frequency signal. The operating frequency of said power detectors is limited to a few gigahertz (GHz) by the discrete arrangement and especially by the predetermined gate length of the field effect transistor. The aim of the invention is to improve a resistive mixer in such a manner that it can be operated at high gigahertz and terahertz frequencies. For this purpose, the resistive mixer comprises a line which has a first and a second electrical conductor having respective connecting contacts so that an electrical high frequency signal can be coupled into the line, the first conductor having a plurality of series-connected voltage-dependent resistor elements (R) and at least one capacitive element (C) being interposed between the first and the second conductor.

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Wuppertal, Germany

Erik Oejefors