General Electric Company

Diamond Innovaitons, Inc.

Erik O Einset

David Martin Johnson

David Winfield Woodruff

Philip G Kosky

Michael H Zimmerman

Mark Steven Deming

A method for improving the toughness of a CBN product made by a high temperature/high pressure (HP/HT) process commences by forming a blend of an oxygen getter and CBN product-forming feedstock. The blend is subjected to a CBN high temperature/high pressure (HP/HT) process for forming a CBN product. The amount of oxygen getter in the blend is sufficient to improve the toughness of the CBN product. The resulting CBN product desirably has an oxygen content of less than about 300 ppm. Oxygen getters include Al, Si, and Ti. The HP/HT process is conducted in the absence or presence of catalytic materials.

Low oxygen cubic boron nitride and its production

The present invention is addressed to improving a blank for a wire drawing die formed from an annular cemented metal carbide support component having a lengthwise extent from an entrance end to an exit end and extending radially about a central longitudinal axis to define a cylindrical internal bore through the lengthwise extent, and a cylindrical sintered polycrystalline compact component received within the bore of the support component and bonded thereto at an interface surface extending a radial distance from and along the longitudinal axis from a wire drawing entrance end to a wire drawing exit end. The compact component is adapted to receive an aperture extending through its lengthwise extent about the central longitudinal axis and is configured with an entrance zone at the die entrance end which tapers inwardly therefrom to a reduction zone whereat a wire to be drawn through the aperture makes initial contact with the compact component, and thence to a bearing zone and an exit zone. The improvement in such wire drawing die blank revolves the radial distance from said central longitudinal axis to said interface surface tapers inwardly from the entrance end to a minimum prior to the bearing zone after which said radial distance remains substantially constant to said exit end. The corresponding wire drawing die and the method for producing the inventive wire drawing blank also form additional aspects of the present invention.

Wire drawing die with non-cylindrical interface configuration for reducing stresses

An abrasive compact cutting element includes an axisymmetric superhard abrasive element having a proximal cutting end, an inwardly tapered distal attachment end, and an outer surface; and an axisymmetric cemented carbide support element configured to receive the abrasive element tapered attachment end. The outer surface of the proximal cutting end of the abrasive element is spaced-apart from the outer surface of the carbide support element. The abrasive compact cutting element can be manufactured by forming an axisymmetric annular cemented carbide support element having an upper proximal end, a lower inwardly tapered distal end, and an outer surface. Abrasive particles are disposed in the annular cemented carbide support element. HP/HT processing forms an polycrystalline abrasive particle compact having a proximal cutting end and a tapered distal attachment end which compact is disposed within the annular cemented carbide support element. Cemented carbide is removed from the annular cemented carbide support element about its outer surface to reveal the polycrystalline abrasive compact proximal cutting end which has a outer surface that is spaced-apart from the outer surface of the carbide support element. The corresponding method for manufacturing the abrasive compact forms another aspect of the invention.

Axisymmetric cutting element

Wire drawing die with non-cylindrical interface configuration for

A continuous diamond structure deposited by chemical vapor deposition is disclosed having at least two thermal conductivity diamond layers controlled by the diamond growth rate where one thermal conductivity diamond layer is grown at a high growth rate of at least one micron per hour for hot filament chemical vapor deposition and at least 2-3 microns per hour for microwave plasma assisted chemical vapor deposition, on a substrate such as molybdenum in a chemical vapor deposition chamber and at a substrate temperature that promotes the high growth rate, and the other thermal conductivity diamond layer is grown at a growth rate and substrate temperature lower than the high growth rate diamond layer. High growth rate and low growth rate diamond layers can be deposited in any sequence to obtain a continuous diamond structure that does not show distinguishable, separate, crystalline columnar layers, having improved thermal conductivity.

Diamond film structure with high thermal conductivity

A method is disclosed for producing continuous CVD diamond films with at least two controlled diamond thermal conductivity layers having improved thermal conductivity in the direction parallel to the diamond film plane to increasing the lateral heat spreading ability of the diamond film. Also, disclosed is a method to decrease the time to deposit high thermal conducting diamond by chemical vapor deposition.

Method for making high thermal conducting diamond

Temperature uniformity and control in apparatus for chemical vapor deposition of diamond is improved by contacting the rear of the substrate assembly, which may be a substrate or a holder containing substrates, with a thermal spreader, preferably of copper and preferably having heating means embedded therein or associated therewith. The thermal spreader contacts a thermal resistance unit, preferably of stainless steel, which in turn is in contact with a cooling element that preferably has coolant passages therein.

Growing community of inventors

Delaware, OH, United States of America

Erik O Einset