Centre National De La Recherche Scientifique

Ecole Polytechnique

Total Sa

Centre National De La Recherche Scientifique-cnrs

Erik Johnson

Jean-Paul Booth

Bastien Bruneau

Pere Roca I Cabarrocas

Pavel Bulkin

Nada Habka

Gilles Poulain

Nacib Benmammar

Tatiana Novikova

An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.

Apparatus and method for patterned processing

The invention relates to a circuit () able to achieve simultaneous impedance matching between a generator (G) and a load (CH) for a power supply signal comprising at least two distinct frequencies.

Circuit for impedance matching between a generator and a load at multiple frequencies, assembly comprising such a circuit and related use

A method for generating an ion flow asymmetry in a capacitively coupled radiofrequency plasma reactor comprising a step for energization of a first electrode by a radiofrequency voltage waveform. The standardized voltage waveform is an approximate waveform with a degree of approximation of a standardized sawtooth radiofrequency function having different rising and falling slopes. The degree of approximation of the approximate waveform and the pressure P of the gas are sufficiently high for causing the appearance of an asymmetry of the ion flows between the ion flow at the first electrode and the ion flow at a second electrode.

Method and system for controlling ion flux in an RF plasma

A photovoltaic module includes at least two photovoltaic cells in series, each rectangular cell including, respectively, a first rear thin film electrode, a photovoltaic stack having at least two active materials included between the rear electrode and a transparent conductive electrode made of a thin film, the electrode TC being capable of collecting and transmitting an electric current generated by the photovoltaic stack, the two photovoltaic cells being electrically connected in series by an electrical contact strip that is included between the electrode TC of the first cell and the rear electrode of the second cell. The local thickness of the electrode TC of the cell varies as a function of the distance to the electrical contact strip. Also described are methods for depositing and etching the transparent conductive film so as to simultaneously manufacture a plurality of cells for a single module.

Photovoltaic module including a transparent conductive electrode having a variable thickness, and methods for manufacturing same

A method is provided for exciting at least one electrode of a capacitively coupled reactive plasma reactor containing a substrate. The electrode is excited by applying a RF voltage with a trapezoidal waveform comprising a ramp-up, a high plateau, a ramp-down and a low plateau. The plasma density can be controlled by adjusting the duration of the ramp-up, the duration of the ramp-down, the amplitude and the repetition rate of the trapezoidal waveform. The ion energy distribution function at the substrate can be controlled by adjusting the amplitude and the relative duration between the high plateau and the low plateau of the trapezoidal waveform.

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Paris, France

Erik Johnson