Asml Netherlands B.v.

Asnl Netherlands B.v.

Erik Johan Koop

Reiner Maria Jungblut

Rene Marinus Gerardus Johan Queens

Arie Jeffrey Den Boef

Maurits Van Der Schaar

Hugo Augustinus Joseph Cramer

Frank Staals

Patrick Warnaar

Thomas Theeuwes

Armand Eugene Albert Koolen

Han-Kwang Nienhuys

Ralph Brinkhof

Alessandro Polo

Jin Lian

Lukasz Jerzy Macht

Grzegorz Grzela

Jeroen Cottaar

Victor Emanuel Calado

Martinus Cornelis Reijnen

Hilko Dirk Bos

Arend Johannes Donkerbroek

Laurent Khuat Duy

Si-Han Zeng

Robert Franken

David Warren Burry

Method of measuring a height profile of one or more substrates is provided comprising measuring a first height profile of one or more fields on a substrate using a first sensor arrangement, the first height profile being the sum of a first interfield part and a first intrafield part, measuring a second height profile of one or more further fields on the substrate or on a further substrate using a second sensor arrangement, the second height profile being the sum of a second interfield part and a second intrafield part, determining from the measurements with the first sensor arrangement an average first intrafield part, and determining the height profile of the further fields from the second interfield part and the average first intrafield part thereby correcting the measurements of the second sensor arrangement.

Method of determining a height profile, a measurement system and a computer readable medium

The disclosure relates to measuring a parameter of a lithographic process and a metrology apparatus. In one arrangement, radiation from a radiation source is modified and used to illuminate a target formed on a substrate using the lithographic process. Radiation scattered from a target is detected and analyzing to determine the parameter. The modification of the radiation comprises modifying a wavelength spectrum of the radiation to have a local minimum between a global maximum and a local maximum, wherein the power spectral density of the radiation at the local minimum is less than 20% of the power spectral density of the radiation at the global maximum and the power spectral density of the radiation at the local maximum is at least 50% of the power spectral density of the radiation at the global maximum.

Method of measuring a parameter of a lithographic process, metrology apparatus

A lithographic apparatus applies a device pattern at multiple fields across a substrate. A height map is decomposed into a plurality of components. A first height map component represents topographical variations associated with the device pattern. One or more further height map components represent other topographical variations. Using each height map component, control set-points are calculated according to a control algorithm specific to each component. The control set-points calculated for the different height map components are then combined and used to control imaging of the device pattern to the substrate. The specific control algorithms can be different from one another, and may have differing degrees of nonlinearity. The combining of the different set-points can be linear. Focus control in the presence of device-specific topography and other local variations can be improved.

Methods for controlling lithographic apparatus, lithographic apparatus and device manufacturing method

A method of measuring a property of a substrate, the substrate having a plurality of targets formed thereon, the method comprising:

Method of measuring a property of a substrate, inspection apparatus, lithographic system and device manufacturing method

The invention provides a level sensor configured to determine a height level of a surface of a substrate, comprising a detection unit arranged to receive a measurement beam after reflection on the substrate, wherein the detection unit comprises an array of detection elements, wherein each detection element is arranged to receive a part of the measurement beam reflected on a measurement subarea of the measurement area, and is configured to provide a measurement signal based on the part of the measurement beam received by the respective detection element, and wherein the processing unit is configured to calculate, in dependence of a selected resolution at the measurement subarea, a height level of the measurement subarea, or to calculate a height level of a combination of multiple measurement subareas.

Level sensor, a method for determining a height map of a substrate using a selected resolution, and a lithographic apparatus

Embodiments of the invention relate to a method for determining exposure settings for a target field on a substrate in a lithographic exposure process, including providing calibration data by determining the position of a calibration field in a first direction at a plurality of calibration positions in a second and third direction relative to the position of the calibration field. The method also includes providing production data by establishing the position on the substrate of the target field in the second and third direction and by measuring the position of the exposure field in the first direction at least one measurement position relative to the position of the exposure field in the second and third direction.

Method for determining exposure settings, lithographic exposure apparatus, computer program and data carrier

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Eindhoven, Netherlands

Erik Johan Koop