Asml Netherlands B.v.

Erik Jensen

Everhardus Cornelis Mos

Richard Johannes Franciscus Van Haren

Peter Ten Berge

Jochem Sebastiaan Wildenberg

Marinus Jochemsen

Roy Werkman

Peter Hanzen Wardenier

Erik Johannes Maria Wallerbos

Bijoy Rajasekharan

Michael Kubis

Cornelis Johannes Rijnierse

Jurgen Johannes Henderikus Maria Schoonus

Johannes Catharinus Hubertus Mulkens

Hakki Ergün Cekli

Hubertus Johannes Gertrudus Simons

Leon Paul Van Dijk

Bernardo Kastrup

David Frans Simon Deckers

Wolfgang Helmut Henke

Victor Emanuel Calado

Pieter Gerardus Jacobus Smorenberg

Putra Saputra

Adam Jan Urbanczyk

Paul Derwin

Khalid Elbattay

Joungchel Lee

Velislava Ignatova

Hyun-Woo Yu

Gautam Sarma

A method for optimizing a sequence of processes for manufacturing of product units, includes: associating measurement results of performance parameters (e.g., fingerprints) with the recorded process characteristics (e.g., context); obtaining a characteristic (e.g., context) of a previous process (e.g. deposition) in the sequence already performed on a product unit; obtaining a characteristic (e.g., context) of a subsequent process (e.g., exposure) in the sequence to be performed on the product unit; determining a predicted performance parameter (e.g., fingerprint) of the product unit associated with the sequence of previous and subsequent processes by using the obtained characteristics to retrieve measurement results of the performance parameters (e.g., fingerprints) corresponding to the recorded characteristics; and determining corrections to be applied to future processes (e.g. exposure, etch) in the sequence to be performed on the product unit, based on the determined predicted performance parameter.

Optimizing a sequence of processes for manufacturing of product units

A method to change an etch parameter of a substrate etching process, the method including: making a first measurement of a first metric associated with a structure on a substrate before being etched; making a second measurement of a second metric associated with a structure on a substrate after being etched; and changing the etch parameter based on a difference between the first measurement and the second measurement.

Method to change an etch parameter

A method including evaluating, with respect to a parameter representing remaining uncertainty of a mathematical model fitting measured data, one or more mathematical models for fitting measured data and one or more measurement sampling schemes for measuring data, against measurement data across a substrate, and identifying one or more mathematical models and/or one or more measurement sampling schemes, for which the parameter crosses a threshold.

Method and apparatus for inspection and metrology

A method including: obtaining information regarding a patterning error in a patterning process involving a patterning device; determining a nonlinearity over a period of time introduced by modifying the patterning error by a modification apparatus according to the patterning error information; and determining a patterning error offset for use with the modification apparatus based on the determined nonlinearity.

Method and apparatus to reduce effects of nonlinear behavior

A method including obtaining a measurement and/or simulation result of a pattern after being processed by an etch tool of a patterning system, determining a patterning error due to an etch loading effect based on the measurement and/or simulation result, and creating, by a computer system, modification information for modifying a patterning device and/or for adjusting a modification apparatus upstream in the patterning system from the etch tool based on the patterning error, wherein the patterning error is converted to a correctable error and/or reduced to a certain range, when the patterning device is modified according to the modification information and/or the modification apparatus is adjusted according to the modification information.

Method and apparatus to correct for patterning process error

A method including modeling high resolution patterning error information of a patterning process involving a patterning device in a patterning system using an error mathematical model, modeling a correction of the patterning error that can be made by a patterning device modification tool using a correction mathematical model, the correction mathematical model having substantially the same resolution as the error mathematical model, and determining modification information for modifying the patterning device using the patterning device modification tool by applying the correction mathematical model to the patterning error information modeled by the error mathematical model.

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Veldhoven, Netherlands

Erik Jensen