Lam Research Corporation

Erik H Engdahl

Wilbur C Krusell

Rahul Jairath

Anil K Pant

Glenn W Travis

Saket Chadda

Edward T Ferri, Jr

Jiri Pecen

Jerauld J Cutini

James Bagley

Jeff Gasparitsch

Douglas W Young

Cangshan Xu

Michael R Vogtmann

Joseph R Breivogel

Ben Mooring

Robert F Taff

Kenneth J Bahng

Randall L Green

Paul Stasiewicz

Michael David Steiman

Robert G Boehm, Jr

Gene Hempel

Paul H Stasiewicz, Jr

Chris Frederickson

An apparatus for chemically mechanically planarizing a semiconductor wafer is disclosed having a continuous polishing strip with first side having a fixed abrasive surface and a second side opposite the first side. In one embodiment, a first drive roller holds a first end of the polishing strip, a second drive roller holds a second end of the polishing strip, and a pair of support rollers contacts the second side of the polishing strip on either end of a polishing strip support. A drive motor is operably connected to the first and second drive rollers for moving the polishing strip in a linear, bi-directional manner.

Linear reciprocating disposable belt polishing method and apparatus

A platen for use in chemical mechanical planarization (CMP) systems is disclosed. The platen is arranged below a linear polishing pad and designed to apply a controlled fluid flow to the underside of the linear polishing pad. The platen includes a leading zone containing a first plurality of output holes. The leading zone is oriented more proximate to an upstream region of the linear polishing pad. The platen also includes a trailing zone containing a second plurality of output holes. The trailing zone is oriented more proximate to a downstream region of the linear polishing pad. The leading zone and the trailing zone are independently controlled and designed to output the controlled fluid flow independently from each of the first plurality of output holes and the second plurality of output holes.

Apparatus for controlling leading edge and trailing edge polishing

An assembly for holding a substrate in a chemical mechanical planarization (CMP) apparatus is provided. The assembly includes a holder frame insertable into the chemical mechanical planarization apparatus, the holder frame having an inner wall. The assembly further includes at least one rolling mechanism rotatably mounted in the holder frame such that at least a portion of the rolling mechanism protrudes from the inner wall. The assembly also includes a wafer chuck movably mounted in the holder frame, the wafer chuck having a first side shaped to substantially conform to the inner wall and to be in continuous contact with the at least one rolling mechanism during planarization, and a second side adapted to receive a substrate for planarization. Also provided are an improved assembly for holding a substrate in a CMP apparatus and a method for reducing friction in a gimbaling mechanism of a wafer chuck in a wafer holder in a CMP apparatus during planarization.

Low friction gimbaled substrate holder for CMP apparatus

A method and apparatus for conditioning a polishing pad are described. The method includes steps of providing a chemical mechanical polishing apparatus having a polishing region and a conditioning region; cycling a polishing member through the apparatus; contacting the polishing member in the conditioning region with a conditioning member; and conditioning the polishing member. The apparatus includes an end effector adapted to receive a conditioning member, the end effector being attached to an arm that can be moved horizontally and vertically, and a strain gauge that monitors the force applied to a polishing member.

Conditioning mechanism in a chemical mechanical polishing apparatus for semiconductor wafers

A system and method for planarizing a plurality of semiconductor wafers is provided. The method includes the steps of processing each wafer along the same process path using at least two polishing stations to each partially planarize the wafers. The system includes an improved process path exchanging a detachable wafer carrying head with spindles at each processing point and conveying the detached wafer carrying heads in a rotary index table between processing points. The system also provides for improved polishing accuracy using linear polishers having pneumatically adjustable belt tensioning and aligning capabilities.

Method of transporting a semiconductor wafer in a wafer polishing system

A method and apparatus are disclosed for chemically-mechanically polishing and planarizing semiconductors. An apparatus includes first and second rollers connected by a tension belt. A polishing member is releasably attached to the first and second rollers. A method includes clamping a first portion of a continuous strip of polishing member to a first roller, clamping a second portion of the continuous strip to a second roller, applying a tension to the continuous strip and rotationally reciprocating the rollers while pressing a semiconductor wafer against the continuous strip.

Method and apparatus for chemical mechanical planarization and polishing of semiconductor wafers using a continuous polishing member feed

Method and apparatus for polishing semiconductor wafers

A linear polishing belt for use in chemical-mechanical polishing (CMP) of a substrate comprises an opening and a flexible monitoring window secured to the belt to close the opening and to create a monitoring channel in the belt. A plurality of monitoring channels can also be used. A film thickness monitor comprising an interferometer can be disposed alongside the belt or at least partially within a region bound by it. The monitoring channel and the film thickness monitor can be used in the CMP process to determine the end point of the CMP process, determine removal rate at any given circumference of a substrate, determine average removal rate across a substrate surface, determine removal rate variation across a substrate surface, and optimize removal rate and uniformity.

Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher

A temperature compensating unit is coupled to a linearly moving belt of a polisher for adjusting the temperature of the belt, which temperature is measured by a sensor situated proximal to the belt.

Method and apparatus for stabilizing the process temperature during chemical mechanical polishing

Method and apparatus for in-situ end-point detection and optimization of

A technique for utilizing sensors to monitor the polishing of a semiconductor wafer when a linear polisher is utilized to polish the wafer. The sensors are distributed along the surface or are coupled to openings along the surface to monitor the on-going polishing process. The sensed information from the sensors are processed in order to provide feedback for compensating the fluid dispensing when fluid platens are used and/or the downforce exerted by the wafer carrier.

Sensors for a linear polisher

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Livermore, CA, United States of America

Erik H Engdahl