University of California

Colorado State University Research Foundation

Euv Llc.

Jmar Technologies, Inc.

Erik H Anderson

Scott Harris Bloom

Georgiy Olegovich Vaschenko

Oscar Hemberg

Patrick P Naulleau

Jorge J Rocca

Carmen Menoni

Weilun Chao

Ablation of holes having diameters as small as 82 nm and having clean walls was obtained in a poly(methyl methacrylate) on a silicon substrate by focusing pulses from a Ne-like Ar, 46.9 nm wavelength, capillary-discharge laser using a freestanding Fresnel zone plate diffracting into third order is described. Spectroscopic analysis of light from the ablation has also been performed. These results demonstrate the use of focused coherent EUV/SXR light for the direct nanoscale patterning of materials.

Nanometer-scale ablation using focused, coherent extreme ultraviolet/soft x-ray light

Techniques for fabricating well-controlled, random relief, engineered surfaces that serve as substrates for EUV optical devices are accomplished with grayscale exposure. The method of fabricating a multilevel EUV optical element includes: (a) providing a substrate; (b) depositing a layer of curable material on a surface of the substrate; (c) creating a relief profile in a layer of cured material from the layer of curable material wherein the relief profile comprises multiple levels of cured material that has a defined contour; and (d) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. The curable material can comprise photoresist or a low dielectric constant material.

Method of fabricating reflection-mode EUV diffusers

Growing community of inventors

El Cerrito, CA, United States of America

Erik H Anderson