Lumileds LLC

Other

Fathom Radiant, Pbc

Erik Charles Nelson

Parijat Deb

Isaac Wildeson

Kenneth John Vampola

Junko Kobayashi

Tsutomu Ishikawa

Robert T Weverka

William Andregg

Theodore Chung

Lekhnath Bhusal

Suk Choi

Dane R Austin

Parijat P Deb

An automotive headlight is disclosed including: an optical unit including a plurality of optical elements, each optical element having a different central direction; a segmented light-emitting diode (LED) chip including a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section being aligned with a different respective optical element, and each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs, apply a reverse bias to each of the second LEDs, and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.

Optoelectronic device and adaptive illumination system using the same

Optical communication system communicates between an array of originating tiles and an array of terminating tiles. Each array is associated with a lenslet array, such as a two-layer array which has two layers of lenslets. Each originating tile has an array of transmitters and each terminating tile has an array of receivers. Each tile is associated with a common lenslet or lenslet pair. A beamlet from a representative transmitter passes through the lenslet pair adjacent to its tile to become a collimated beam whose angle is related to the location of the transmitter. The collimated beam passes through the receiver lenslet pair adjacent to the tile containing the receiver associated with the representative transmitter, and is focused onto that receiver by that lenslet pair. The system may operate in the reverse direction, wherein the transmitters are transmitter-receivers, the receivers are receiver-transmitters, and a beam from a receiver-transmitter is directed to its corresponding transmitter-receiver.

Optical shuffle computation network

In a method according to embodiments of the invention, a semiconductor structure including a III-nitride light emitting layer disposed between a p-type region and an n-type region is grown. The p-type region is buried within the semiconductor structure. A trench is formed in the semiconductor structure. The trench exposes the p-type region. After forming the trench, the semiconductor structure is annealed.

Method of forming a p-type layer for a light emitting device

Described herein are methods for growing light emitting devices under ultra-violet (UV) illumination. A method includes growing a III-nitride n-type layer over a III-nitride p-type layer under UV illumination. Another method includes growing a light emitting device structure on a growth substrate and growing a tunnel junction on the light emitting device structure, where certain layers are grown under UV illumination. Another method includes forming a III-nitride tunnel junction n-type layer over the III-nitride p-type layer to form a tunnel junction light emitting diode. A surface of the III-nitride tunnel junction n-type layer is done under illumination during an initial period and a remainder of the formation is completed absent illumination. The UV light has photon energy higher than the III-nitride p-type layer's band gap energy. The UV illumination inhibits formation of Mg&#x2014;H complexes within the III-nitride p-type layer resulting from hydrogen present in a deposition chamber.

Methods for growing light emitting devices under ultra-violet illumination

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

Methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers in light emitting devices

Method of forming a P-type layer for a light emitting device

Described is a reflector for light emitting devices. A device includes a reflector in contact with a first n-type region and a second n-type region. The reflector includes multiple layers. One layer having an index of refraction different than the other layers. The device includes a light emitting region (LER) in contact with the second n-type region, a p-type region in contact with the LER and a light extraction region (LXR) in contact with the p-type region. A majority of light escapes the device through the LXR. The reflector reflects light emitted by the LER back towards the LXR. In another device, a reflector is embedded in a n-type region of the device. The device includes a LER, a p-type region, and a wavelength converter structure. The reflector reflects light emitted by the wavelength converting structure back towards the wavelength converting structure.

Reflective structure for light emitting devices

An apparatus is disclosed that includes a segmented light-emitting diode (LED) chip having a plurality of LEDs that are separated by trenches formed on the segmented LED chip and arranged in a plurality of sections, each section including at least one first LED and at least one second LED; and a controller configured to: apply a forward bias to each of the first LEDs; apply a reverse bias to each of the second LEDs; and change a brightness of the first LEDs in any section based on a signal generated by the second LED in that section.

Growing community of inventors

Pleasanton, CA, United States of America

Erik Charles Nelson