Agere Systems Guardian Corp.

Erick John Michel

Jerome Levkoff

Daniel C Sutryn

Julie Eng

Anthony D Mazzatesta

The invention is a method of fabricating a semiconductor device involving selectively etching at least a first semiconductor layer on a semiconductor wafer so as to perform a lateral taper etch in said layer, forming a second layer over the resulting etched region so as to planarize the etched area, and subsequently performing a second etch over a portion of the etched region so as to form a mesa geometry. This material allows device fabrication with a lateral taper, beneficial to monolithic integration of devices, such as expanded beam lasers, while reducing or eliminating unwanted increases in mesa width (mesa bulge) resulting from the lateral taper.

Growing community of inventors

Reading, PA, United States of America

Erick John Michel