Infineon Technologies Ag

Erich Scheikl

Alberto Zanardi

Robert Illing

Herbert Hopfgartner

Heinz Zitta

A semiconductor device includes a semiconductor chip including an active area. A temperature sensor arrangement provides a measurement signal dependent on the temperature in or close to the active area. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-temperature when the measurement signal exceeds the first threshold. The evaluation circuit is also configured to count the number of exceedances of the first threshold and to signal when a maximum number of exceedances is reached.

Semiconductor device with thermal fault detection

A semiconductor device with an over-current detection feature is disclosed. According to an example of the invention the device includes: a semiconductor chip including a load current path that conducts a load current in response to an input signal activating the load current flow. A current sensor arrangement provides a measurement signal representing the load current. An evaluation circuit is configured to compare the measurement signal with a first threshold and to signal an over-current when the measurement signal exceeds the first threshold after a delay time period starting from the activation of the load current flow has elapsed.

Semiconductor device with overcurrent protection

A semiconductor device with a thermal fault detection is disclosed. According to one example of the invention such a semiconductor device includes a semiconductor chip including an active area. It further includes a temperature sensor arrangement that provides a measurement signal dependent on the temperature in or close to the active area, the measurement signal having a slope of a time-dependent steepness, and an evaluation circuit that is configured to provide an output signal that is representative of the steepness of the slope of the measurement signal and further configured to signal a steepness higher than a predefined threshold.

A method and an apparatus for monitoring a load driven by a power semiconductor switch. The method may comprise, for example: driving a control electrode of the power semiconductor switch, in such a way that a rise in the load current through the power semiconductor switch is effected after a delay time; generating a diagnostic current flowing through the load, wherein the diagnostic current brings about a voltage drop across the load before the delay time has elapsed; and evaluating the voltage drop across the load before the delay time has elapsed.

Monitoring a load driven by a power semiconductor switch

An apparatus, comprising a transistor having a source/drain node and a gate, and a circuit coupled between the source/drain node and the gate and configured to limit a voltage between the source/drain node and the gate to a clamping voltage such that the clamping voltage is reduced in response to a rising temperature of the transistor. Also, a method, comprising measuring a first temperature, measuring a second temperature, and reducing a clamped voltage between a source/drain node of a transistor and a gate of the transistor responsive to a difference between the first and second temperatures increasing.

Temperature dependent clamping of a transistor

An integrated circuit arrangement includes connection terminals, an undervoltage detector, and at least one circuit unit. The connection terminals are configured to receive a supply voltage. The undervoltage detector is coupled between the connection terminals and is configured to compare the supply voltage with a select reference value selected from a first reference value and a second reference value. The second reference value is less than the first reference value. The undervoltage detector is further operable to produce a detector signal on the basis of a result of the comparison. The circuit unit is coupled between the connection terminals, and includes a first operating state with a first drawn current and a second operating state with a second drawn current. The second drawn current exceeds the first drawn current. The select reference value corresponds to an operating state of the at least one circuit unit.

Integrated circuit with an undervoltage detector

A semiconductor switching element has a control connection and a load path, with the load path connected in series with a load and a supply voltage is applied across the series circuit. The semiconductor switching element is actuated by providing a first charging current at the control connection, and providing a second charging current at the first control connection, which is greater than the first charging current, when a voltage which is applied across the load path is less than a first threshold value, with the threshold value being between 20% and 80% of the supply voltage.

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Villach, Austria

Erich Scheikl