Robert Boschgmbh

Chinese Academy of Sciences

Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Eric Zhang

Bernd Schumann

Yaxia Yin

Yuguo Guo

NaHong Zhao

Pallavi Verma

Yunhua Chen

Lily Liu

Chunpeng Yang

A semiconductor structure and a method for forming the same are provided in embodiments of the present disclosure. The forming method includes: providing a base; forming a trench in the base, and forming a first dielectric layer on the bottom surface and side walls of the trench; forming a conductor layer, the conductor layer covering the first dielectric layer on the bottom surface of the trench; forming a second dielectric layer in the trench on the conductor layer; and forming a drift region on a side, provided with the trench, of the base. The forming method can improve the breakdown voltage of an LDMOS device and also reduce the Ron of the LDMOS device, thereby improving the performance of the LDMOS device.

Semiconductor structure and method for forming same

An electrode additive comprising an electrochemically active material in a form of one-dimensional molecular chain is disclosed wherein the electrochemically active material is contained inside a nanotube-formed conductive shell material. An electrode comprising said electrode additive, and the uses of said electrode additive and said electrode are also disclosed.

Electrode additive and an electrode comprising said electrode additive

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Shanghai, China

Eric Zhang