Silanna Asia Pte Ltd

Eric Vann

Shanghui Larry Tu

Vadim Kushner

A semiconductor device includes an active region formed over a substrate. The active region includes a FET and a diode. The FET includes one or more FET fingers. Each FET finger includes a FET source region, a FET drain region, and a lateral FET gate electrode. The diode includes one or more diode fingers. Each of the diode fingers includes a diode anode region electrically coupled to the FET source region, a diode cathode region electrically coupled to the FET drain region, and a lateral diode gate electrode electrically coupled to the diode anode region and electrically isolated from the lateral FET gate electrode. The FET fingers are active fingers of the semiconductor device and the diode fingers are dummy fingers of the semiconductor device. The diode is configured to clamp a maximum voltage developed across the FET drain region and the FET source region.

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San Diego, CA, United States of America

Eric Vann