Motorola Corporation

Freescale Semiconductor,inc.

Eric Shanks Johnson

Nyles Wynn Cody

Frederick Y Cho

Adolfo C Reyes

Neal J Mellen

William C Peatman

Joseph W Walsh

A method of manufacturing a semiconductor component includes providing a substrate ( ) with a surface ( ), providing a layer ( ) of undoped gallium arsenide over the surface of the substrate, forming a gate contact ( ) over a first portion of the layer, and removing a second portion of the layer.

Method of manufacturing a semiconductor component and semiconductor component thereof

A method of fabricating an Emode HIGFET semiconductor device, and the device, is disclosed including epitaxially growing by metal-organic chemical vapor deposition an epitaxial buffer. The buffer includes a layer of short-lifetime gallium arsenide on a gallium arsenide substrate and a layer of aluminum gallium arsenide on the layer of short-lifetime gallium arsenide. The short-lifetime gallium arsenide is grown at a temperature below approximately 550&deg; C. so as to have a lifetime less than approximately 500 picoseconds. A stack of compound semiconductor layers is then epitaxially grown on the layer of aluminum gallium arsenide of the buffer and an Emode field effect transistor is formed in the stack.

MOCVD-grown emode HIGFET buffer

An ionization gas analyzer system includes an ionization chamber including ionization electrodes contained therein. The ionization chamber contains a test gas or gas mixture. A high voltage generator is coupled to the electrodes and provides variable high voltage pulses to the ionization electrodes. An ionization voltage analyzer is coupled to the ionization chamber and receives ionization voltage information from the plurality of ionization electrodes in response to the variable high voltages pulses. The ionization voltage analyzer produces a gas code identifier in response to the plurality of ionization voltages by defining a code based on which of the ionization voltages exceed an arbitrarily established reference level ionization voltage. A single ionization electrode system can be used to determine a concentration of a particular gas.

Ionization gas analyzer and method

A method for growing high quality epitaxial films using low pressure MOCVD that includes providing a substrate that is misoriented from a singular plane, placing the substrate into an MOCVD reactor at a total pressure of less than 0.2 atmospheres and then growing an epitaxial film on the substrate. When providing a misoriented gallium arsenide substrate, the MOCVD reactor is set at a temperature in the range of 650 to 750 degrees centigrade to grow an aluminum gallium arsenide film. This temperature is substantially lower than that at which aluminum gallium arsenide epitaxial films are commonly grown and the resulting film has a smooth surface morphology and enhanced photoluminesence properties.

Epitaxial film growth using low pressure MOCVD

A permeable tube is inserted in a processing gas line to allow impurities surrounding the permeable tube to enter the processing line. By plumbing a steel tube in parallel with the permeable tube the process carrier gas can be switched from one tube to the other in rapid succession to allow pure or impure gases to enter into a reaction chamber. This can permit the growth of alternating layers of differently doped materials. As an example, it has been discovered that incorportaing small amounts of oxygen into an AlGaAs layer will produce a semi-insulating layer.

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Scottsdale, AZ, United States of America

Eric Shanks Johnson