Hefechip Corporation Limited

Eric S Parent

Yingfang Wang

Keeho Kim

Yinuo Pan

Norman S Chen

An OPC modeling method is disclosed, which includes: step S: determining optical model parameters and resist model parameters; step S: obtaining a plurality of parameter combinations by stochastically choosing values for the parameters; step S: performing photolithography simulations and etching wafers and calculating RMS values of differences between simulated CDs and etching CDs and BCE values of the CDs; step S: evaluating the values according to Pareto principle and calculating Pareto optimum to N-th-best Pareto suboptimum sets to prioritize the plurality of parameter combinations in a descending order; step S: applying a genetic algorithm with position-based crossover and/or mutation to the plurality of parameter combinations, to obtain new parameter combinations; and step S: iterating steps Sto Son the new parameter combinations until a number of iterations reaches a first predetermined value and using highest prioritized ones of parameter combinations resulting from a last iteration for OPC modeling.

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Ballston Spa, NY, United States of America

Eric S Parent