Dow Corning Corporation

The Dow Chemical Company

Other

Dow Global Technolgoies LLC

Tokyo Ohka Kogyo Co., Ltd.

Dow Silicones Corporation

Eric S Moyer

Peng-Fei Fu

Craig Rollin Yeakle

Sheng Wang

Michael John Spaulding

Sanlin Hu

Edward W Rutter, Jr

Ivan L Berry, Iii

Kyuha Chung

Qingyuan Han

Michael L Bradford

Gregory Scott Becker

Jason Suhr

David A Babb

Robert F Harris

Katherine S Clement

Russell Keith King

W Frank Richey

Marius W Sorenson

Kasumi Takeuchi

Ernest L Ecker

Leslie Earl Carpenter, Ii

Youfan Liu

Sina Maghsoodi

Tetsuyuki Michino

Frank L Oaks

Pamela S Foster

Wei Chen

Wei Zhu Chen

Binh Thanh Nguyen

Carlo Waldfried

Xiaobing Zhou

Bianxiao Zhong

Wei Rong

Ying Hung So

Jeffrey Nicholas Bremmer

Michael Robert Reiter

John Albaugh

Daniel M Scheck

Michael Bourbina

Andrew MacMillan

Denise J Moyer

David Lee Wyman

Cheryl L Murlick

Gregory S Becker

Mark A Wanous

Todd Bridgewater

Craig Yeakle

Craig R Yeakle

Provided in various embodiments are methods for making ultraviolet radiation curable (UV-curable) silicone compositions and the UV-curable silicone compositions prepared by such methods. Provided in various embodiments are methods for making anti-dust coatings using such UV-curable silicone compositions and the anti-dust coatings using such UV-curable silicone compositions prepared by such methods. The UV-curable silicone compositions may be used in the coating of silicone-based articles for LED packages, encapsulants, lamps, luminaires, optical articles and the like, substantially reducing and/or eliminating the pick-up of dust and improving optical properties of the silicone-based articles.

UV-curable silicone compositions and anti-dust coating compositions containing same

A coatable resin solution capable of forming a coating when applied to the surface of a substrate that is photo-patternable and developable as a dielectric material upon exposure to ultraviolet radiation is provided. The resin solution comprises a silsequioxane-based (SSQ-based) resin, at least one initiator, and an organic solvent. The SSQ-based resin includes both a hydride component and at least one photo-curable component. The resulting coating exhibits a dielectric constant that is less than or equal to about 3.5.

Photo-patternable and developable silsesquioxane resins for use in device fabrication

A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si&#x2014;H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

Wafer bonding system and method for bonding and debonding thereof

A silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin has the formula(PhSiO(OR'))(HSiO(OR&#x2032;))(MeSiO(OR&#x2032;))(RSiO(OR&#x2032;))and a method of forming an antireflective coating on an electronic device comprising applying to an electronic device an antireflective coating composition comprising the silsesquioxane resin and a solvent, and removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.

Silsesquioxane resins and method of using them to form an antireflective coating

A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, an aqueous base stripper or a reactive ion etch recipe containing CFis used to 'etch back' the silicon resin to the top of the photoresist material, exposing the entire top surface of the photoresist. Then, a second reactive ion etch recipe containing Oto etch away the photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

Method and materials for reverse patterning

This invention pertains to silsesquioxane resins useful in antireflective coatings wherein the silsesquioxane resin comprises the units (Ph(CH)SiO(OR'))(HSiO(OR&#x2032;))(MeSiO(OR&#x2032;))(RSiO(OR&#x2032;))(RSiO(OR&#x2032;))where Ph is a phenyl group, Me is a methyl group; R&#x2032; is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from a carboxylic acid group, a carboxylic acid forming group, and mixtures thereof; and Ris selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, sulfur-containing organic functional groups, hydroxyl producing group, aryl sulphonic ester groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.90; n has a value of 0.05 to 0.99; o has a value of 0 to 0.95; p has a value of 0.01 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q&#x2248;1.

Silsesquioxane resins

A silsesquioxane resin is applied on top of the patterned photo-resist and cured to produce a cured silsesquioxane resin on top of the pattern surface. Subsequently, a reactive ion etch recipe containing CFto 'etch back' the silicon resin to the top of the photoresist material, exposing the entire top surface of the organic based photoresist. Then, a second reactive ion etch recipe containing Oto etch away the organic photoresist. The result is a silicon resin film with via holes with the size and shape of the post that were patterned into the photoresist. Optionally, the new pattern can be transferred into the underlying layer(s).

A silsesquioxane resin is applied over the patterned photo-resist and cured at the pattern surface to produce a cured silsesquioxane resin on the pattern surface. The uncured silsesquioxane resin layer is then removed leaving the cured silsesquioxane resin on the pattern surface. The cured silsesquioxane resin on horizontal surfaces is removed to expose the underlying photo-resist. This photo-resist is removed leaving a pattern of cured silsesquioxane. Optionally, the new pattern can be transferred into the underlying layer(s).

Method and materials for double patterning

A polysilane-polysilazane copolymer contains a polysilane unit of formula (I), and a polysilazane unit of formula (II), where each Rand each Rare each independently selected from H, Si, and N atoms, Ris selected from H, Si, or C atoms, a&#x2267;1, b&#x2267;1, and a quantity (a+b)&#x2267;2. The polysilane-polysilazane copolymer may be formulated in a composition with a solvent. The polysilane-polysilazane copolymer may be used in PMD and STI applications for trench filling, where the trenches have widths of 100 nm or less and aspect ratios of at least (6). The polysilane-polysilazane copolymer can be prepared by amination of a perchloro polysilane having (2) or more silicon atoms per molecule with a primary amine. 

Polysilane&#x2014;polysilazane copolymers and methods for their preparation and use

A method of forming an antireflective coating on an electronic device comprising (A) applying to an electronic device an ARC composition comprising (i) a silsesquioxane resin having the formula (PhSiO(OH)HSiO(OH)(MeSiO(OH)where Ph is a phenyl group, Me is a methyl group, x has a value of 0, 1 or 2; m has a value of 0.05 to 0.95, n has a value of 0.05 to 0.95, p has a value of 0.05 to 0.95, and m+n+p&#x2248;1; and (ii) a solvent; and (B) removing the solvent and curing the silsesquioxane resin to form an antireflective coating on the electronic device.

Method for forming anti-reflective coating

Disclosed is silsesquioxane resin composition that contains a free radical curable functional group that is stabilized with a hydrophilic inhibitor. The hydrophilic inhibitor that has the capability to scavenge free radicals such as ascorbic acid or salicylic acid is used to stabilize the resin. The resins are useful in semiconductor formation such as for anti-reflective coatings, hardmasks or photoresist layers.

Stabilization of silsesquioxane resins

A silsesquioxane-based composition that contains (a) silsesquioxane resins that contain HSiOunits and RSiOunits wherein; R is an acid dissociable group, and (b) 7-diethylamino-4-methylcoumarin. The silsesquioxane-based compositions are useful as positive resist compositions in forming patterned features on substrate, particularly useful for multi-layer layer (i.e. bilayer) 193 nm & 157 nm photolithographic applications.

Silsesquioxane resin systems with base additives bearing electron-attracting functionalities

An antireflective coating compositions comprising (I) a silsesquioxane resin (II) a compound selected from photo-acid generators and thermal acid generators; and (III) a solvent wherein in the silsesquioxane resin contains a carboxylic acid forming group or a sulfuric acid forming group.

Switchable antireflective coatings

This invention relates to acrylic functional resin compositions. More particularly, this invention relates to Poly [organ-co-(meth)acryloxyorgano]silsequioxane resins that are curable upon exposure to ultraviolet radiation with photo initiator or upon heating with or without a free radical generator. The resin compositions have high storage stability at room temperature and produces films that are useful as planarization layer, interlayer dielectric, passivation layer, gas permeable layer, negative photoresist, antireflective coating, conformal coating and IC packaging.

Radiation sensitive silicone resin composition

A silsesquioxane resin comprised of the units (Ph(CH)SiO(OR')), (HSiO(OR&#x2032;))(MeSiO(OR&#x2032;))(RSiO(OR&#x2032;)), (RSiO(OR&#x2032;))where Ph is a phenyl group, Me is a methyl group; R&#x2032; is hydrogen atom or a hydrocarbon group having from 1 to 4 carbon atoms; R is selected from an aryl sulfonate ester group; and Ris selected from substituted phenyl groups, ester groups, polyether groups; mercapto groups, and reactive or curable organic functional groups; and r has a value of 0, 1, 2, 3, or 4; x has a value of 0, 1 or 2; wherein in the resin m has a value of 0 to 0.95; n has a value of 0.05 to 0.95; o has a value of 0.05 to 0.95; p has a value of 0.05 to 0.5; q has a value of 0 to 0.5; and m+n+o+p+q=1.

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Midland, MI, United States of America

Eric S Moyer