Intersil Americas Inc.

Eric S Lee

Francois Hebert

Kenneth Colin Dyer

Xijian Lin

Michael I-Shan Sun

Photodetectors, methods for use in manufacturing photodetectors, and systems including photodetectors, are described herein. In an embodiment, a photodetector includes a plurality of photodiode regions, at least some of which are covered by an optical filter. A plurality of metal layers are located between the photodiode regions and the optical filter. The metal layers include an uppermost metal layer that is closest to the optical filter and a lowermost metal layer that is closest to the photodiode regions. One or more inter-level dielectric layers separate the metal layers from one another. Each of the metal layers includes one or more metal portions and one or more dielectric portions. The uppermost metal layer is devoid of any metal portions underlying the optical filter.

Photodetectors useful as ambient light sensors and methods for use in manufacturing the same

Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In an embodiment, a light sensor includes a photodetector sensor region formed in a semiconductor substrate, a dielectric optical coating filter covering the photodetector sensor region, and dummy dielectric optical coating features beyond the photodetector sensor region, wherein the dummy dielectric optical features include one or more dummy corners, dummy islands and/or dummy rings. Alternatively, or additionally, the dielectric optical coating filter includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.

Light sensors having dielectric optical coating filters

Light sensors including dielectric optical coatings to shape their spectral responses, and methods for fabricating such light sensors in a manner that accelerates lift-off processes and increases process margins, are described herein. In certain embodiments, a short duration soft bake is performed. Alternatively, or additionally, temperature cycling is performed. Alternatively, or additionally, photolithography is performed using a photomask that includes one or more dummy corners, dummy islands and/or dummy rings. Each of the aforementioned embodiments form and/or increase a number of micro-cracks in the dielectric optical coating not covering the photodetector sensor region, thereby enabling an accelerated lift-off process and an increased process margin. Alternatively, or additionally, a portion of the photomask can include chamfered corners so that the dielectric optical coating includes chamfered corners, which improves the thermal reliability of the dielectric optical coating.

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San Francisco, CA, United States of America

Eric S Lee