Honeywell G.m.b.h.

Eric S Johnson

Joseph L Schmit

M Walter Scott

Robert J Hager

Ernest L Stelzer

Mercury cadmium telluride carrier concentration can be adjusted by having a quantity of lithium dispersed therein in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Methods of forming the acceptor doped mercury cadmium telluride include diffusion of a quantity of lithium into an already existing body of mercury cadmium telluride. Formation of NP junctions and P-P+ regions are disclosed using the compositions and methods of the present invention.

Doping HgCdTe with Li

Mercury cadmium telluride having a quantity of an acceptor material selected from Group VA of the Periodic Table, consisting of nitrogen, phosphorus, arsenic and antimony and bismuth dispersed therein, preferably in an amount sufficient to measurably increase the acceptor concentration of the semiconductor. Most preferred are phosphorus, arsenic and antimony. Also disclosed are junctions formed by two adjacent regions of mercury cadmium telluride in which one of the regions contains an acceptor concentration increasing amount of nitrogen phosphorus, arsenic, bismuth or antimony. A method is disclosed which permits diffusion of these additives into a body of already formed mercury cadmium telluride.

Doping of (Hg,Cd)Te with a Group VA element

Mercury cadmium telluride is disclosed having a quantity of a halogen donor material preferably selected from the group consisting of bromine and iodine dispersed therein in an amount sufficient to measurably increase the donor concentration. Also disclosed are PN junctions formed using this donor material. A method of introducing the donor material is additionally disclosed.

Preparation of halogen doped mercury cadmium telluride

A method of adjusting donor concentration in a body of mercury cadmium telluride comprising the steps of contacting the mercury cadmium telluride with a quantity of donor material selected from the group consisting of gallium and gallium alloys containing up to 3% of aluminum, tin or cadmium and heating the body at a temperature of at least 200.degree. C for a sufficient time to diffuse the donor material within the body. The donor material is placed in contact with the body of mercury cadmium telluride by immersing the body in a molten quantity of the donor material to wet the surface thereof. Further included is the step of removing any undistributed donor material after heating. Also disclosed is a method of adjusting the donor concentration in the first region of mercury cadmium telluride with respect to a second adjacent region by practicing the process of this invention on the first region only. Since donor materials tend to increase the N-type concentration, a PN junction can be formed from P-type material and an N N+ junction may be formed from N-type material.

Diffusion of donors into (Hg Cd) Te through use of Ga-Al alloy

A method of adjusting the donor concentration in a body of mercury cadmium telluride, or in regions of a body, comprising the steps of contacting the donor material region with a donor material of either aluminum or silicon and heating the body at a temperature of at least 550.degree. C for sufficient time to diffuse the donor material into the body. In a preferred embodiment, the heating is done in the presence of a source of mercury vapor pressure other than the body of semiconductor.

Doping mercury cadmium telluride with aluminum or silicon

Lithium doped mercury cadmium telluride

Halogen-doped Hg,Cd,Te

Ohmic contacts to p-type mercury cadmium telluride are prepared by depositing a Column IB metal on a surface of the p-type mercury cadmium telluride, depositing a buffer material on the Column IB metal, and contacting the buffer material with a bonding material which is capable of alloying with the Column IB metal. The buffer material prevents alloying between the Column IB metal and the bonding material.

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Minnetonka, MN, United States of America

Eric S Johnson