Qualcomm Incorporated

North Carolina State University

Eric Rotenberg

Gregory M Wright

Amrit Panda

Hadi Parandeh Afshar

Jonathan S Lindsey

Anil Krishna

Vignyan Reddy Kothinti Naresh

Yongseok Yi

Ravi K Venkatesan

Ahmed S Al-Zawawi

Gregory Michael Wright

Providing multi-element multi-vector (MEMV) register file access in vector-processor-based devices is disclosed. In this regard, a vector-processor-based device includes a vector processor comprising multiple processing elements (PEs) communicatively coupled via a corresponding plurality of channels to a vector register file comprising a plurality of memory banks. The vector processor provides a direct memory access (DMA) controller that is configured to receive a plurality of vectors that each comprise a plurality of vector elements representing operands for processing a loop iteration. The DMA controller arranges the vectors in the vector register file such that, for each group of vectors to be accessed in parallel, vector elements for each vector are stored consecutively, but corresponding vector elements of consecutive vectors are stored in different memory banks of the vector register file. As a result, multiple elements of multiple vectors may be accessed with a single vector register file access operation.

Providing multi-element multi-vector (MEMV) register file access in vector-processor-based devices

Providing reconfigurable fusion of processing elements (PEs) in vector-processor-based devices is disclosed. In this regard, a vector-processor-based device provides a vector processor including a plurality of PEs and a decode/control circuit. The decode/control circuit receives an instruction block containing a vectorizable loop comprising a loop body. The decode/control circuit determines how many PEs of the plurality of PEs are required to execute the loop body, and reconfigures the plurality of PEs into one or more fused PEs, each including the determined number of PEs required to execute the loop body. The plurality of PEs, reconfigured into one or more fused PEs, then executes one or more loop iterations of the loop body. Some aspects further include a PE communications link interconnecting the plurality of PEs, to enable communications between PEs of a fused PE and communications of inter-iteration data dependencies between PEs without requiring vector register file access operations.

Providing reconfigurable fusion of processing elements (PEs) in vector-processor-based devices

Providing variable interpretation of usefulness indicators for memory tables in processor-based systems is disclosed. In one aspect, a memory system comprises a memory table providing multiple memory table entries, each including a usefulness indicator. A memory controller of the memory system comprises a global polarity indicator representing how the usefulness indicator for each memory table entry is interpreted and updated by the memory controller. If the global polarity indicator is set, the memory controller interprets a value of each usefulness indicator as directly corresponding to the usefulness of the corresponding memory table entry. Conversely, if the global polarity indicator is not set, the polarity is reversed such that the memory controller interprets the usefulness indicator value as inversely corresponding to the usefulness of the corresponding memory table entry. In this manner, the interpretation and updating of usefulness indicators by the memory controller can be varied using the global polarity indicator.

Providing variable interpretation of usefulness indicators for memory tables in processor-based systems

Enabling parallel memory accesses by providing explicit affine instructions in vector-processor-based devices is disclosed. In this regard, a vector-processor-based device implementing a block-based dataflow instruction set architecture (ISA) includes a decoder circuit configured to provide an affine instruction that specifies a base parameter indicating a base value B, a stride parameter indicating a stride interval value S, and a count parameter indicating a count value C. The decoder circuit of the vector-processor-based device decodes the affine instruction, and generates an output stream comprising one or more output values, wherein a count of the output values of the output stream equals the count value C. Using an index X where 0&#x2264;X&#x3c;C, each Xoutput value in the output stream is generated as a sum of the base value B and a product of the stride interval value S and the index X.

Enabling parallel memory accesses by providing explicit affine instructions in vector-processor-based devices

A memory system includes storage cells, a respective one of which is configured to store a fixed charge therein when a write voltage applied thereto is above a predetermined threshold voltage and to discharge the fixed charge therefrom when the write voltage applied thereto is below the threshold voltage. The storage cells may be charged and/or discharged at a latency that is a function of a voltage differential between the write voltage and the threshold voltage. A variable-latency write circuit for the storage cells is configured to dynamically vary the voltage differential between the write voltage and the threshold voltage to provide a variable-latency write operation that stores the fixed charge therein or discharges the fixed charge therefrom. Related methods are also discussed.

Systems, methods and devices for providing variable-latency write operations in memory devices

A molecular memory cell includes first and second electrodes. First and second charge storage molecules have respective first and second oxidation potentials and are disposed between the first and second electrodes. A molecular linkage couples the first and second charge storage molecules to the first electrode and provides respective first and second electron transfer rates for the first and second charge storage molecules. The first and second different oxidation potentials are different and/or the first and second electron transfer rates are different. In particular, the second oxidation potential may be greater than the first oxidation potential and the first electron transfer rate may be greater than the second electron transfer rate, such that the first charge storage molecule may be used as fast, volatile primary memory and the second charge storage molecule can be used as slower, less volatile secondary memory. In various embodiments, memory cells can be constructed from an admixture of charge storage molecules or by using a bipartite charge storage molecule. Memory cells can include a molecular transistor incorporating such molecular structures.

Growing community of inventors

Raleigh, NC, United States of America

Eric Rotenberg