Other

Nikon Precision Incorporated

Eric R Johnson

Ilya Grodnensky

Kyoichi Suwa

Kazuo Ushida

Steve Slonaker

Apparatus for performing measurement of a dimension of a test marked formed by overlapping feature imaged onto a an image forming layer of a semiconductor wafer and the calculation of the critical dimensions of the features from test mark. This is used in semiconductor processing. Also included is software configured to program a measurement device to perform the measurement and calculation of the dimension of a test mark.

Apparatus for preforming measurement of a dimension of a test mark for semiconductor processing

Increased accuracy of measurement of variation of a critical dimension is achieved through measurement of area of a test mark by detection of intensity of radiation such as broadband light with which at least a portion of a test mark is imaged. The test mark is preferably formed by partial lithographic exposures of overlapping features, preferably lines having a width approximating a critical dimension of interest and at a shallow angle to each other such that the test mark has the shape of a parallelogram or rhombus.

Method and apparatus for dimension measurement of a pattern formed by lithographic exposure tools

A method for forming a critical dimension test mark, and the use of the mark to characterize and monitor imaging performance is provided. Methods in accordance with the present invention encompass an exposure of an essentially standard critical dimension bar at each of two overlapping orientations that are rotated about an axis with respect to each other. The overlapped portion forming a critical dimension test mark that is useful for enabling low cost, rapid determination of sub-micron critical dimensions for characterizing exposure tool imaging performance and in-process performance monitoring using optical measurement systems.

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Eric R Johnson