Lumentum Operations LLC

Eric R Hegblom

Ajit Vijay Barve

Albert T Yuen

Matthew Glenn Peters

Guowei Zhao

Jun Yang

Yeyu Zhu

Benjamin Kesler

Kevin Wang

Yuefa Li

In some implementations, an emitter device includes a substrate layer and epitaxial layers on the substrate layer. The epitaxial layers may include a first mirror, a second mirror, and an active layer between the first mirror and the second mirror. The epitaxial layers may include at least one oxidation layer including a first oxidized region and a second oxidized region separate from the first oxidized region. The first oxidized region and the second oxidized region may be configured to provide a strain on the epitaxial layers that is radially asymmetric. The epitaxial layers may include a set of oxidation trenches in the set of epitaxial layers to expose the at least one oxidation layer.

Strain polarized vertical cavity surface emitting laser

A vertical-cavity surface-emitting laser (VCSEL) array may include an n-type substrate layer and an n-type metal on a bottom surface of the n-type substrate layer. The n-type metal may form a common anode for a group of VCSEL. The VCSEL array may include a bottom mirror structure on a top surface of the n-type substrate layer. The bottom mirror structure may include one or more bottom mirror sections and a tunnel junction to reverse a carrier type within the bottom mirror structure. The VCSEL array may include an active region on the bottom mirror structure and an oxidation layer to provide optical and electrical confinement. The VCSEL array may include an n-type top mirror on the active region, a top contact layer over the n-type top mirror, and a top metal on the top contact layer. The top metal may form an isolated cathode for the VCSEL array.

Vertical-cavity surface-emitting laser array with isolated cathodes and a common anode

In some implementations, an emitter array may include a substrate, an epitaxial structure on the substrate, a plurality of bottom-emitting emitters defined in the epitaxial structure, a first electrical contact positioned at a top side of the epitaxial structure, a second electrical contact positioned at the top side of the epitaxial structure, and a metal layer disposed on a bottom side of the substrate. The metal layer may be electrically connected to the second electrical contact. The metal layer may include one or more openings for light emission of the plurality of bottom-emitting emitters.

Bottom-emitting emitter array with a bottom side metal layer

In some implementations, a vertical cavity surface emitting laser (VCSEL) array may include a substrate. In some implementations, the VCSEL array may include a set of cathodes disposed on the substrate in a first direction, wherein a cathode, of the set of cathodes, is defined by a serpentine shape. In some implementations, the VCSEL array may include a set of anodes disposed on the substrate in a second direction, wherein an anode, of the set of anodes, is defined by the serpentine shape.

Matrix addressable vertical cavity surface emitting laser array

A bottom-emitting vertical-cavity surface-emitting laser (VCSEL) chip may include a VCSEL array including plurality of VCSELs and an integrated optical element including a plurality of lens segments. The integrated optical element may direct beams provided by the plurality of VCSELs to a particular range of angles to create a diffusion pattern using the beams provided by the plurality of VCSELs. A surface of a first lens segment may be sloped to cause a beam from a first VCSEL to be steered at a first angle and a surface of a second (adjacent) lens segment may be sloped to cause a beam from a second VCSEL to be steered at a second angle. A direction of the second angle with respect to a surface of the VCSEL array may be opposite to a direction of the first angle with respect to the surface of the VCSEL array.

Bottom-emitting vertical cavity surface emitting laser array with integrated directed beam diffuser

An emitter may include a substrate, a conductive layer on at least a bottom surface of a trench, and a first metal layer to provide a first electrical contact of the emitter on an epitaxial side of the substrate. The first metal layer may be within the trench such that the first metal layer contacts the conductive layer within the trench. The emitter may further include a second metal layer to provide a second electrical contact of the emitter on the epitaxial side of the substrate, and an isolation implant to block lateral current flow between the first electrical contact and the second electrical contact.

Vertical-cavity surface-emitting laser with dense epi-side contacts

A method for fabricating an array of emitters may include providing a first metallization layer for a first set of emitters of a first channel, wherein the first metallization layer comprises a first interchannel portion positioned between the first set of emitters and a second set of emitters of a second channel. The method may include depositing a dielectric layer on the first interchannel portion of the first metallization layer. The method may include providing a second metallization layer for the second set of emitters, wherein the second metallization layer comprises a second interchannel portion positioned between the first set of emitters and the second set of emitters, and wherein the second interchannel portion of the second metallization layer at least partially overlaps the first interchannel portion of the first metallization layer.

Multi-layer metallization for multi-channel emitter array

A testing device may include a stage associated with holding an emitter wafer during testing of an emitter. The stage may be arranged such that light emitted by the emitter passes through the stage. The testing device may include a heat sink arranged such that the light emitted by the emitter during the testing is emitted in a direction away from the heat sink, and such that a first surface of the heat sink is near a surface of the emitter wafer during the testing but does not contact the surface of the emitter wafer. The testing device may include a probe card, associated with performing the testing of the emitter, that is arranged over a second surface of the heat sink such that, during the testing of the emitter, a probe of the probe card contacts a probe pad for the emitter through an opening in the heat sink.

Temperature control for bottom emitting wafer-level vertical cavity surface emitting laser testing

A VCSEL may include an n-type substrate layer and an n-type bottom mirror on a surface of the n-type substrate layer. The VCSEL may include an active region on the n-type bottom mirror and a p-type layer on the active region. The VCSEL may include an oxidation layer over the active region to provide optical and electrical confinement of the VCSEL. The VCSEL may include a tunnel junction over the p-type layer to reverse a carrier type of an n-type top mirror. Either the oxidation layer is on or in the p-type layer and the tunnel junction is on the oxidation layer, or the tunnel junction is on the p-type layer and the oxidation layer is on the tunnel junction. The VCSEL may include the n-type top mirror over the tunnel junction, a top contact layer over the n-type top mirror, and a top metal on the top contact layer.

Vertical-cavity surface-emitting laser with a tunnel junction

A vertical cavity surface emitting laser (VCSEL) array may include a plurality of VCSELs. A size of an emission area of a first VCSEL, of the plurality of VCSELs, may be different from a size of an emission area of a second VCSEL of the plurality of VCSELs. The first VCSEL may be located closer to a center of the VCSEL array than the second VCSEL. A difference between the size of the emission area of the first VCSEL and the size of the emission area of the second VCSEL may be associated with reducing a difference in operating temperature between the first VCSEL and the second VCSEL, or reducing a difference in optical power output between the first VCSEL and the second VCSEL.

Variable emission area design for a vertical-cavity surface-emitting laser array

An optical device may include an emitter array including a plurality of emitter groups. Each emitter group may be independently addressable from other emitter groups, of the plurality of emitter groups, for independently lasing. Emitters of the plurality of emitter groups may be interspersed within the emitter array such that a minimum emitter-to-emitter distance within the emitter array is less than a minimum emitter-to-emitter distance within any of the emitter groups.

Emitter array with multiple groups of interspersed emitters

A vertical-cavity surface-emitting laser (VCSEL) may include a substrate and a set of epitaxial layers on the substrate. The set of epitaxial layers may include a first mirror and a second mirror, an active region between the first mirror and the second mirror, and an oxidation layer to provide optical and electrical confinement in the VCSEL. The oxidation layer may be near the first mirror. The set of epitaxial layers may include an oxide lens to control a characteristic of an output beam emitted by the VCSEL. The oxide lens may be separate from the oxidation layer, and may be a lens that is separate from the first mirror and from the second mirror.

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Sunnyvale, CA, United States of America

Eric R Hegblom