Agilent Technologies, Inc.

Hewlett-packard Company

Keysight Technologies, Inc.

Avago Technologies Wireless IP (singapore) Pte. Ltd.

Avago Technologies Wireless Ip, Pte. Ltd.

Eric R Ehlers

Dean B Nicholson

Reto Zingg

Timothy Earl Shirley

Keith W Howell

David J Dascher

Stephen J Westerman

Jerry Orr

Bobby Y Wong

Richard Lynn Rhymes

Mathias Bonse

Jim Clatterbaugh

Ajay A Prabhu

Ronald J Hogan, Jr

John C Faick

Bobby Yubo Wong

Craig Hutchinson

A directional power detector device includes a directional coupling network including a first transmission path connected between a radio frequency (RF) input and an RF output, the first transmission path having a voltage transmission gain A, phase &#x3b8; and characteristic impedance Zo, a second transmission path having the same voltage transmission gain A, phase &#x3b8; and characteristic impedance Zo, and a resistor connected between the first transmission path at the RF output and the second transmission path, where the resistor has a value including the characteristic impedance Zo. The directional power detector device further includes a detector diode including an anode connected to the second transmission path and a cathode, a capacitor connected between the cathode of the detector diode and the RF input port, and a detector output connected to the cathode of the detector diode. The detector outputs a DC detector voltage when a forward RF signal is applied to the RF input, and outputs zero DC detector voltage when reverse RF signal is applied to the RF output.

Directional power detector with low loss coupling network

A multi-band frequency multiplier configured to generate frequencies and multiplied frequencies in an integrated system. The multi-band frequency multiplier includes a multi-band multiplier core with a multiplier core differential amplifier configured to receive a multiplier input signal. A switchable load impedance connects to the multiplier core differential amplifier, and includes n multiplier sections. Each multiplier section includes a section impedance and a section switch. The multiplier core differential amplifier generates an output signal having a frequency substantially equal to k times the input frequency in a range of a selected one of n critical frequencies when a selected one of the section switches corresponding to the selected one of the n critical frequencies is triggered.

Multi-band frequency multiplier

A power diverter has a first terminal for interposition between a signal input and a signal output. A MEMS switch is coupled to the first terminal and has a MEMS switch control input. A MEMS protection switch is coupled to the MEMS switch and has a protection switch control input. The switch control inputs are configured to receive control signals for selectively placing the power diverter in i) an ON state in which signal power at the signal input is diverted from the signal output via the MEMS switch and the MEMS protection switch, ii) an OFF state in which signal power at the signal input is not diverted from the signal output, and in which the MEMS switch mitigates an insertion loss and distortion imparted by the MEMS protection switch to a signal path between the signal input and the signal output, and iii) an intermediary state in which the MEMS protection switch reduces current flow through the MEMS switch.

Power diverter having a MEMS switch and a MEMS protection switch

A stacked IC structure has an integrated circuit (IC) having a front IC side, a back IC side, and a first conductive feature formed on the front IC side. A through-chip via connects to the first conductive feature on the front IC side. A substrate has an external circuit formed on a front surface. The IC attaches to the front surface of the substrate and the through-chip via forms a connection between the first conductive feature and the external circuit.

Through-chip via interconnects for stacked integrated circuit structures

An integrated circuit includes a first RF port and a second RF port. A limiter section is disposed between the first RF port and the second RF port and a detector section coupled to an RF signal path between the first RF port and the second RF port configured to detect a power level of an input signal, and coupled to the limiter section.

Active limiter with integrated sensor

In one aspect, a signal path is described. The signal path has a nominal impedance over a specified bandwidth and interconnects a port of a microwave circuit package and a microwave component mounted in the microwave circuit package. The signal path includes an inductive transition and first and second capacitive structures. The inductive transition extends from a first point on the signal path to a second point on the signal path and has an excess impedance above the nominal impedance. The first and second capacitive structures respectively shunt the first and second points on the signal path to compensate the excess impedance of the inductive transition. The inductive transition and the first and second capacitive structures approximate a filter having an impedance substantially matching the nominal impedance over the specified bandwidth. In other aspects, a microwave circuit package that incorporates the above-described signal path and an interconnection method that includes forming the above-described signal path are described.

Interconnecting a port of a microwave circuit package and a microwave component mounted in the microwave circuit package

An integrated step attenuator ('ISA') monolithically integrated on a single chip for adjusting an input signal. The ISA may include a step attenuation network ('SAN') that may include at least one switchable attenuation section, and at least one electronically switchable trimming network (&#x201c;ESTN&#x201d;). The SAN may be configured to adjust the input signal responsive to the state of a switch that bridges the attenuation sections of the SAN, and the ESTN may be configured to adjust the input signal responsive to the state of a switch in signal communication with one or more shunt resistors in the ESTN.

Broadband step attenuator with improved time domain performance

A directional bridge for measuring propagated signals to and from a source device to a load device where both the source device and load device are in signal communication with the directional bridge is disclosed. The directional bridge may include a first bridge circuit network and a first sensing element in signal communication with the first bridge circuit network. The first sensing element may produce a first measured signal that is proportional to the propagated signals.

Integrated directional bridge

A MEMS switching system includes a power diverter interposed between a signal source and a bank of MEMS switches. The power diverter has an activated state wherein signal power from the signal source is diverted from the bank of MEMS switches, and a deactivated state wherein signal power from the signal source is not diverted from the bank of MEMS switches. A control signal selects between the activated state and the deactivated state of the power diverter.

MEMs switching system

The invention provides a true average, wide dynamic range microwave power sensor using a diode-stack-attenuator diode stack technology. The invention provides a diode stack microwave power sensor which includes an RF signals receiver having wide dynamic power ranges; a low power sensor path connected between the receiver and ground for sensing relatively low power RF input signals. The low power sensor path includes one or more stacked RF diodes in which a number of diode pairs may be coupled to ground through respective capacitors. An impedance network including attenuating resistors R,and R,are connected in series between the receiver and ground. A high power sensor path is connected in parallel between the attenuating resistors R,and R,and ground for sensing attenuated relatively high power RF input signals. The high sensor path includes a second stacked RF diode in which a second number of stacked diode pairs are coupled to ground through a respective capacitor, and in which the sensor diode operates in the square law region and senses the power levels over the wide dynamic ranges of the received RF signals.

True average wide dynamic range microwave power sensor using diode stack attenuator-diode stack

The present invention relates to GaAs FET switches for use in microwave test equipment. For many microwave applications, particularly GSM (Global System for Mobile Telecommunications) basestation testing, accurate, reliable switching of microwave signals is desirable. GaAs FET switches are widely used to switch microwave signals in many applications because of their small size and high reliability. However, GaAs FET switches have a significant drawback called the 'slow tail' effect. This effect causes the final amplitude of the microwave signal to only be reached gradually after a 10 to 20 millisecond interval. The present invention integrates high intensity LEDs above GaAs IC switches to decrease the absolute magnitude of the slow tail effect, and to shorten its length for faster, more accurate switching.

Faster switching GaAs FET switches by illumination with high intensity

An electrical overstress power protection device consists of a diode limiter array and an input and output electrical matching network. All of these functions are integrated monolithically on a single semiconductor chip which allows ease of use, small size, and high frequency operation. The device is used to protect instrument input and output circuitry from damage.

Electrical overstress protection device

In the present invention a monolithic step attenuator has internal frequency compensation provided by a field effect transistor, or FET, fabricated to have a well defined drain-to-source capacitance. The drain-to-source capacitance of the FET cancels the effect of parasitic impedances, providing a constant frequency response for the monolithic step attenuator within a defined frequency range. In a first embodiment of the present invention, internal frequency compensation is provided by a FET connected in a shunt arm of a Tee resistor network forming the monolithic step attenuator. In a second embodiment of the present invention, internal frequency compensation is provided by a pair of FETs, each FET connected in one of two shunt arms of a Pi resistor network forming the monolithic step attenuator. In a third embodiment of the present invention, a multicell step attenuator is formed by connecting multiple monolithic step attenuators having internal frequency compensation in series.

Growing community of inventors

Santa Rosa, CA, United States of America

Eric R Ehlers