Atmel Grenoble S.a.

E2v Semiconductors

Eric Pourquier

Louis Brissot

Philippe Rommeveaux

Gilles Simon

Alain Jutant

The present application relates to the fabrication of an electronic component. The component comprises two, superposed integrated circuits: one of which is formed on the front side of a thinned first substrate, and the other of which is produced on the front side of a second substrate, with an insulating planarization layer interposed between the front sides of the two substrates. The silicon of the backside of the thinned substrate is opened locally above a first conducting area located in the thinned substrate and above a second conducting area located in the second substrate. A conducting layer portion, deposited on both areas, electrically connects them so as to provide the interconnection between the two circuits. The external connection pads may also be formed in this conducting layer.

Process for fabricating a high-integration-density image sensor

The invention relates to very small-sized color image sensors. The sensor according to the invention is made by the following method:

Color image sensor with enhanced colorimetry and method for making same

The invention relates to the making of color image sensors for miniature cameras. The method of fabrication includes the formation on the front face of a semi-conductive wafer of a series of active zones comprising image detection circuits, each corresponding to a respective image sensor. Each active zone is surrounded by input/output pads. The wafer is transferred by its front fact against the front face of a supporting substrate. The major part of the thickness of the semiconductor wafer is eliminated, leaving a very fine semi-conductive layer including the image detection circuits on the substrate. This method is characterized in that firstly, layers of color filters are deposited and then etched on the semi-conductive layer thus thinned. Secondly, the substrate includes connection pads laid out with the same geometry as the pads of each active zone so as to come into a position facing these pads during the transfer, to solder a respective pad of the substrate to a corresponding pad of the semi-conductive wafer. Finally, the substrate is diced into individual sensors after the deposition of the color filters.

Method for making a color image sensor with pad-to-pad soldered supporting substrate

The invention relates to method for making a color image sensor. The method comprises: Furthermore:

Method for making a color image sensor with recessed contact apertures prior to thinning

The invention concerns a color image sensor that can be used to make a miniature camera, and a corresponding method for making this sensor. The image sensor comprises a transparent substrate () on the upper part of which are superimposed, successively, a mosaic of color filters (), a very thin silicon layer () comprising photosensitive zones, and a stack of conductive layers () and insulating layers () defining image detection circuits enabling the collection of the electrical charges generated by the illumination of the photosensitive zones through the transparent substrate. The manufacturing method consists in producing the photosensitive circuits on a silicon wafer, transferring said wafer on to a temporary substrate, thinning the wafer down to a thickness of about three to 30 micrometers, depositing color filters on the surface of the remaining silicon layer and transferring the structure to a permanent transparent substrate and eliminating the temporary substrate.

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Voreppe, France

Eric Pourquier