Aledia

Commissariat a L'energie Atomique Et Aux Energies Alternatives

Commissariat À L'énergie Atomique Et Aux Énergies Alternatives

Eric Pourquier

Ivan-Christophe Robin

Erwan Dornel

Tiphaine Dupont

Olivier Jeannin

Philippe Gilet

Hubert Bono

Xavier Hugon

Philippe Gibert

Frédéric Mayer

Bruno Mourey

Emmanuel Petitprez

Sylvia Scaringella

Wei Sin Tan

Thomas Lacave

Zine Bouhamri

Pamela Rueda Fonseca

Willy Ludurczak

Chang Ying-Lan

Brigitte Martin

Maxime Boistard

Clémence Tallet

Mickaël Rebaud

An optoelectronic device includes, in a stack, an emitting layer having optically active structures, configured to emit or receive radiation, a sensitive layer having at least one structure having a temperature resistance below a temperature Tmax below 200° C., a bond layer, and a transparent support layer. The bond layer is based on an inorganic low temperature bonding material. The bond layer also has cavities directly in line with the optically active structures, between the transparent support layer and the sensitive layer.

Optoelectronic device and manufacturing method

A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Method for producing an optoelectronic device

A process for producing at least two adjacent regions, each comprising an array of light-emitting wires connected together in a given region by a transparent conductive layer, comprises: producing, on a substrate, a plurality of individual zones for growing wires extending over an area greater than the cumulative area of the two chips; growing wires in the individual growth zones; removing wires from at least one zone forming an initial free area to define the arrays of wires, the initial free area comprising individual growth zones level with the removed wires; and depositing a transparent conductive layer on each array of wires to electrically connect the wires of a given array of wires, each conductive layer being separated from the conductive layer of the neighbouring region by a free area. A device obtained using the process of the invention is also provided.

Process for producing adjacent chips comprising LED wires and device obtained by the process

The manufacture of an optoelectronic device includes the formation of light-emitting diodes where each one has a wire form, the formation of spacing walls made of a first dielectric material transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by spacing walls. Light confinement walls are made of a second material adapted to block the light radiation originating from the diodes. The light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein. A thin layer of the second material is deposited so as to directly cover the lateral sidewalls of the spacing walls by being in contact with the wherein and cover the upper border of the light-emitting diodes. The empty spaces delimited between the spacing walls at the level of the areas between the light-emitting diodes are also filled by the thin layer.

Method for manufacturing an optoelectronic device with self-aligning light confinement walls

The manufacture of an optoelectronic device includes the formation of wire-like shaped light-emitting diodes and the formation of spacing walls transparent to the light radiation originating from the diodes. The lateral sidewalls of each diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The radiation originating from each diode and directed in the direction of the adjacent diodes is blocked by the confinement wall. The upper borders of the diodes are covered by the light confinement material so as to ensure a light extraction by the rear face of the optoelectronic device. An optoelectronic device is also described as such.

An optoelectronic device including: a first circuit including a substrate having first and second opposite faces, the first circuit having display pixels, each display pixel having, on the side of the first face, a first light-emitting diode having a first active region adapted to emit a first radiation and, extending from the second face, a second light-emitting diode having a second active region adapted to emit a second radiation, the surface area, viewed from a direction orthogonal to the first face, of the first active region being at least twice as big as the surface area, viewed from the direction, of the second active region; and a second circuit bonded to the first circuit on the side of the first light-emitting diode and electrically linked to the first and second light-emitting diodes.

Optoelectronic device with light-emitting diodes

There is described an optoelectronic device where each light-emitting diode has a wire-like shape. Spacing walls are formed so that the lateral sidewalls of each light-emitting diode are surrounded by at least one of the spacing walls. Light confinement walls directly cover the lateral sidewalls of the spacing walls by being in contact with the latter. The spacing walls have a convex-shaped outer face. At least one of the spacing walls has, over a lower portion, a thickness that increases when getting away from the substrate. They have, over an upper portion, a thickness that decreases at the level of the upper border of the light-emitting diode when getting away from the substrate. The light confinement walls have an inner face having a concave shape matching with the convex shape and directed towards the light-emitting diode for which it confines the light radiation thereof.

An optoelectronic device including a first optoelectronic circuit bonded to a second electronic circuit. The second electronic circuit includes conductive pads. The first optoelectronic circuit includes, for each pixel: at least first and second three-dimensional semiconductor elements extending over a first conductive layer and having the same height; first active areas resting on the first semiconductor elements and capable of emitting or receiving a first electromagnetic radiation; second active areas resting on the second semiconductor elements and capable of emitting or receiving a second electromagnetic radiation; and second, third, and fourth conductive layers electrically coupled to the conductive pads, the second, third, and fourth conductive layers being respectively coupled to the first active areas, to the second active areas, and to the first conductive layer.

Optoelectronic device comprising three-dimensional semiconductor structures in an axial configuration

The invention relates to a method for producing an optoelectronic device () including a matrix array of light-emitting diodes () and a plurality of photoluminescent pads (. . . ) that are each located facing at least some of said light-emitting diodes (), including the following steps:

Process for fabricating an optoelectronic device including photoluminescent pads of photoresist

The invention relates to a method for manufacturing an optoelectronic device (), comprising the following steps: a) providing a growth substrate () made from a semiconductor material; b) forming a plurality of diodes () each comprising a lower face (); c) removing at least a portion () of the substrate so as to free the lower face (); wherein: step a) involves producing a lower part and an upper part of the substrate, the upper part () having a uniform thickness (e) and a level of doping less than that of the lower part; step c) involving removal of the lower part () by selective chemical etching with respect to the upper part ().

Method for producing an optoelectronic device comprising a step of etching the rear face of the growth substrate

A process for fabricating an electronic device including a substrate and microwires or nanowires resting on the substrate, the process including successive steps of covering the wires with an insulating layer, covering the insulating layer with an opaque layer, depositing a first photoresist layer over the substrate between the wires, etching the first photoresist layer over a first thickness by photolithography, etching the first photoresist layer remaining after the preceding step over a second thickness by plasma etching, etching the portion of the opaque layer not covered by the first photoresist layer remaining after the preceding step, etching the portion of the insulating layer not covered by the opaque layer, removing the first photoresist layer remaining after the preceding step, and removing the opaque layer.

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Grenoble, France

Eric Pourquier