International Business Machines Corporation

Globalfoundries Inc.

Johnson and Johnson Vision Care, Inc.

Globalfoundries U.S. 2 LLC

Eric Peter Lewandowski

Jae-Woong Nah

Paul Stephen Andry

Michael S Gordon

Bucknell Chapman Webb

Gregory M Fritz

Adinath S Narasgond

Yu Luo

Michael A Gaynes

Bing Dang

Peter Jerome Sorce

John Ulrich Knickerbocker

Jeng-Bang Yau

Nicholas Torleiv Bronn

Cyril Cabral, Jr

Kenneth Parker Rodbell

Adam Toner

Daniel B Otts

David William Abraham

John Michael Cotte

James Daniel Riall

Fuad Elias Doany

Thomas M Shaw

Xiao Hu Liu

Dongbing Shao

Qiang Huang

Jared Barney Hertzberg

Cornelia Tsang Yang

Markus Brink

Li-Wen Hung

Steven Lorenz Wright

Cornelia K Tsang

Martin O Sandberg

Cornelia Kang-I Tsang

Robert J Polastre

Bo Wen

Eric J Zhang

Oblesh Jinka

Joana Sofia Branquinho Teresa Maria

Jae-woong Nah

Joana S B T Maria

Dana Alexa Totir

Adinath Shantinath Narasgond

Adinath Narasgond

A method of forming a thin film battery may include forming may include forming a trench in a substrate, depositing a stencil on top surface of the substrate, wherein the stencil is aligned with the trench, depositing a cathode layer in the trench, wherein the cathode layer is in direct contact with the stencil, and compressing the cathode layer into the trench to reduce a thickness of the cathode layer. The compressing the cathode layer into the trench may include applying isostatic pressure onto the cathode layer using a pressure head. The method may also include depositing an electrolyte layer on top of the cathode layer, depositing an anode layer on top of the electrolyte layer, and depositing an anode collector layer on top of the anode layer.

High capacity compact lithium thin film battery

Systems and techniques that facilitate uniform qubit chip gaps via injection-molded solder pillars are provided. In various embodiments, a device can comprise one or more injection-molded solder interconnects. In various aspects, the one or more injection-molded solder interconnects can couple at least one qubit chip to an interposer chip. In various embodiments, the device can further comprise one or more injection-molded solder pillars. In various instances, the one or more injection-molded solder pillars can be between the at least one quit chip and the interposer chip. In various cases, the one or more injection-molded solder pillars can be in parallel with the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can facilitate and/or maintain a uniform gap between the at least one qubit chip and the interposer chip. In various embodiments, a melting point of the one or more injection-molded solder pillars can be higher than a melting point of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be superconductors. In various embodiments, a yield strength of the one or more injection-molded solder pillars can be between 3,000 pounds per square inch and 15,000 pounds per square inch, which can be higher than a yield strength of the one or more injection-molded solder interconnects. In various embodiments, the one or more injection-molded solder pillars can be binary tin alloys, tertiary tin alloys, and/or quaternary tin alloys.

Uniform chip gaps via injection-molded solder pillars

In an embodiment, a method for forming a solder bump includes preparing a transfer mold having a solder pillar extending from a mold substrate and through a first photoresist layer and having a shape partially defined by a second photoresist layer that is removed prior to transfer of the solder. In an embodiment, the mold substrate is flexible. In an embodiment, the transfer mold is flexible. In an embodiment, the method includes providing a device substrate having a wettable pad. In an embodiment, the method includes placing the transfer mold and the device substrate into aligned contact such that the solder pillar is in contact with the wettable pad. In an embodiment, the method includes forming a metallic bond between the solder pillar and the wettable pad. In an embodiment, the method includes removing the mold substrate and first photoresist layer.

System and method for forming solder bumps

Techniques regarding selectively tuning the operating frequency of superconducting Josephson junction resonators are provided. For example, one or more embodiments described herein can comprise a method that can include chemically altering a Josephson junction of a Josephson junction resonator via a plasma treatment. The method can also comprise selectively tuning an operating frequency of the Josephson junction resonator based on a property of the plasma treatment.

Selective chemical frequency modification of Josephson junction resonators

An improved molten solder injection head having a vacuum filter and differential gauge system is provided. In one aspect, an injection head is provided. The injection head includes: a reservoir; an injection port on a bottom of the injection head connected to the reservoir; a vacuum port adjacent to the injection port on the bottom of the injection head connected to a vacuum source; and a filter disposed between the bottom of the injection head and the vacuum source. A method for molten solder injection using the present injection head is provided.

Molten solder injection head with vacuum filter and differential gauge system

Devices and methods that can facilitate hybrid under-bump metallization components are provided. According to an embodiment, a device can comprise an under-bump metallization component that can comprise a superconducting interconnect component and a solder wetting component. The device can further comprise a solder bump that can be coupled to the superconducting interconnect component and the solder wetting component. In some embodiments, the superconducting interconnect component can comprise a hermetically sealed superconducting interconnect component.

Hybrid under-bump metallization component

In one example, a battery includes a negative terminal, a positive terminal, an electrolyte contained between the negative terminal and the positive terminal, and a hydrogel layer positioned between and physically separating the negative terminal and the positive terminal.

Microbattery separator

Systems and techniques that facilitate hybrid readout packaging for quantum multichip bonding are provided. In various embodiments, an interposer can have a first quantum chip and a second quantum chip. In various aspects, a readout resonator (e.g., input/output port) of one or more qubits on the first quantum chip can be routed to an inner portion of the interposer. In various instances, the inner portion can be located between the first quantum chip and the second quantum chip. In various aspects, routing the readout resonator to the inner portion can reduce a number of crossings and/or intersections between input/output lines on the interposer and connection buses between qubits on the interposer.

Hybrid readout package for quantum multichip bonding

In an embodiment, a quantum device includes a first set of protrusions formed on a substrate and a second set of protrusions formed on a qubit chip. In the embodiment, the quantum device includes a set of bumps formed on an interposer, the set of bumps formed of a material having above a threshold ductility at a room temperature range, wherein a first subset of the set of bumps is configured to cold weld to the first set of protrusions and a second subset of the set of bumps is configured to cold weld to the second set of protrusions.

Cold-welded flip chip interconnect structure

A quantum device includes a qubit chip having a plurality of qubits and an interposer attached to and electrically connected to the qubit chip. The device also includes a substrate handler attached to one side of the qubit chip or to one side of the interposer, or both so as to be thermally in contact with the qubit chip or the interposer, or both. The substrate handler includes a plurality of vias, at least a portion of plurality of vias being filled with a non-superconducting material, the non-superconducting material being selected to dissipate heat generated in the qubit chip, the interposer or both.

Permanent wafer handlers with through silicon vias for thermalization and qubit modification

Systems and/or techniques associated with a sandwich-parallel micro-battery are provided. In one example, a device comprises a first battery and a second battery. The first battery comprises a first surface and a second surface. The second surface is smaller than the first surface. The second battery comprises a third surface and a fourth surface. The fourth surface is smaller than the third surface. Furthermore, the fourth surface is mechanically coupled to the second surface of the first battery. The third surface of the second battery and the first surface of the first battery comprise a conductive contact that electrically couples the first battery and the second battery.

Sandwich-parallel micro-battery

A digital biomedical device includes a substrate forming a cavity, a seal formed around the cavity, a lid coupled to the substrate by the seal, a reactive metal structure comprising a plurality of metal layers, wherein the reactive metal structure is a component of at least one of the substrate and the lid, a metal trace configured to initiate a self-propagating reaction between the plurality of metal layers of the reactive metal structure and release contents of the cavity, and a power supply configured to apply an electric current to the metal trace.

Delivery device including reactive material for programmable discrete delivery of a substance

A thermalization structure is formed using a foil and a low temperature device (LTD). The foil includes a first layer of a first material. The LTD includes a surface from which heat is transferred away from the LTD. A coupling is formed between the foil and the surface of the LTD, where the coupling includes a bond formed between the foil and the surface such that forming the bond forms a set of ridges in the foil, a ridge in the set of ridges operating to dissipate the heat.

Thermalization structure for cryogenic temperature devices

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White Plains, NY, United States of America

Eric Peter Lewandowski