Ferro Corporation

Cabot Microelectronics Corporation

Eric Oswald

William Kordonski

Yie-Shein Her

Sergei Gorodkin

Bradley M Kraft

Sean Frink

Brian Santora

Brian Edelbach

A magnetorheological fluid for use in magnetorheological ultrasmooth polishing of a substrate surface, comprising an aqueous carrier vehicle; a first amount of magnetic particles having a average diameter between about 1 micrometer and about 2 micrometers; and a second amount of abrasive particles having an average diameter between about &#x3c;1 nanometer and about 15 nanometers. The fluid may further comprise a chemical stabilizer. Preferably the size of the magnetic particles is 2 to 3 orders of magnitude greater than the size of the abrasive particles. Preferably, the magnetic particles are spherical and include carbonyl iron, and preferably, the abrasive particles are selected from the group consisting of aluminum oxide, zirconium oxide, cerium oxide, silica, boron carbide, silicon carbide, natural diamond, synthetic diamond, and combinations thereof.

Magnetorheological fluid for ultrasmooth polishing

The present invention provides auto-stopping CMP slurry compositions that minimize post-CMP non-uniformity and also extend the time that polishing can be continued beyond the end point without the risk of over-polishing the dielectric silicon dioxide film. Auto-stopping CMP slurry compositions according to the invention include ceria abrasive particles and an effective amount of a polyalkylamine such as polyethyleneimine dispersed in water. The methods of the invention include polishing a topographic dielectric silicon dioxide film layer using the auto-stopping CMP slurry compositions to obtain a dielectric silicon dioxide surface having a desired predetermined minimum step height.

Auto-stopping slurries for chemical-mechanical polishing of topographic dielectric silicon dioxide

The present invention provides a chemical mechanical polishing slurry for use in removing a first substance from a surface of an article in preference to silicon nitride by chemical mechanical polishing. The chemical mechanical polishing slurry according to the invention includes an abrasive, an aqueous medium, and an organic polyol that does not dissociate protons, said organic polyol including a compound having at least three hydroxyl groups that are not dissociable in the aqueous medium, or a polymer formed from at least one monomer having at least three hydroxyl groups that are not dissociable in the aqueous medium. In the preferred embodiment, ceria particles are used as the abrasive and the organic polyol is selected from the group consisting of mannitol, sorbitol, mannose, xylitol, sorbose, sucrose, and dextrin. The chemical mechanical polishing slurry can further optionally include acids or bases for adjusting the pH within an effective range of from about 2 to about 12. The present invention also provides a method of selectively removing a first substance such as silicon dioxide in preference to silicon nitride from a surface of an article by chemical-mechanical polishing.

High selectivity CMP slurry

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Rochester, NY, United States of America

Eric Oswald