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Stmicroelectronics (Crolles 2) Sas

Stmicroelectronics (Rousset) Sas

Eric Ollier

Eric Colinet

Laurent Duraffourg

Philippe Andreucci

Carine Marcoux

Pierre Labeye

Sebastien Hentz

Engin Molva

Marc Rabarot

Sébastien Hentz

Thomas Alava

Frederic-Xavier Gaillard

Audrey Berthelot

Julien Arcamone

Frédéric-Xavier Gaillard

Bertrand Bourlon

Carine Ladner

Nicole Devoldere

Thomas Baron

Kévin Benedetto

Herv&eacute; Po&uacute;jard

Valeria Toffoli

Dominique Pavy

Sebastien Fontaine

Mylene Savoye

Thermal flux sensor with heating nanofilaments

The invention relates to a heat flux sensor including: a heating wire () including a material capable of being taken to a determined temperature by Joule effect, suited to being connected to an electrical source, a resonator () of nano electro mechanical system (NEMS) type including:

Heat flux sensor with heating wire

A microelectromechanical gas sensor including a fixed part, at least one suspended part in relation to fixed part, at least one sensitive zone carried on the suspended part, the sensitive zone being able to adsorb/absorb and desorb gaseous species or families of gaseous species, a heater for heating at least the sensitive zone, a detector for detecting the adsorption/absorption and desorption of gaseous species or families of gaseous species on the sensitive zone, a controller of controlling the heater so that the heating is applied to at least the sensitive zone with one or more temperature profiles ensuring the adsorption/absorption and desorption of the gaseous species in a controlled manner so as to obtain an individual desorption of each species or families of gaseous species.

Compact gas sensor with enhanced selectivity

A process for making at least one porous area (ZP) of a microelectronic structure in at least one part of an conducting active layer (), the active layer () forming a front face of a stack, the stack comprising a back face () of conducting material and an insulating layer () interposed between the active layer () and the back face (), said process comprising the steps of:

Process for electrochemically making at least one porous area of a micro and/or nanoelectronic structure

Process for fabrication of a micromechanical and/or nanomechanical structure comprising the following steps, starting from an element comprising a support substrate and a sacrificial layer:

Process for fabrication of a micromechanical and/or nanomechanical structure comprising a porous surface

A device comprising a substrate comprising at least one microelectronic and/or nanoelectronic structure comprising at least one sensitive portion and one fluid channel () defined between said substrate and a cap (), where said fluid channel () comprises at least two apertures to provide a flow in said channel, where said microelectronic and/or nanoelectronic structure is located within the fluid channel, where said cap is assembled with the substrate at an assembly interface, where said device comprises electrical connections between said microelectronic and/or nanoelectronic structure and the exterior of the fluid channel (), where said electrical connections () are formed by vias made through the substrate () directly below the microelectronic and/or nanoelectronic structure, and in electrical contact with said microelectronic and/or nanoelectronic structure.

Device comprising a fluid channel fitted with at least one microelectronic or nanoelectronic system, and method for manufacturing such a device

Device including a substrate including at least one microelectronic and/or nanoelectronic structure (NEMS) having a sensitive portion and a fluid channel. The fluid channel includes two lateral walls, an upper wall connecting the two lateral walls, a lower wall formed by the substrate, and at least two openings in order to provide a circulation in the fluid channel, with the openings being defined between the two lateral walls, with the structure being located inside the fluid channel. Electrical connection lines extend between the structure and the outside of the fluid channel, with the connection lines being carried out on the substrate and passing under the lateral walls. The device also includes an intermediate layer having a planar face in contact with base faces of said lateral walls. The connection lines are at least partially covered by the intermediate layer at least immediately above base faces of the lateral walls. The lateral walls are made sealingly integral on the substrate by a sealing layer on the intermediate layer.

Device comprising a fluid channel provided with at least one micro or nanoelectronic system and method for carrying out such a device

A method of forming a microelectronic device comprising, on a same substrate, at least one electro-mechanical component provided with a suspended structure and at least one transistor, the method comprising a step of release of the suspended structure from the electromechanical component after having formed metal interconnection levels of components.

Method of forming a suspended structure and a transistor co-integrated on a same substrate

A method for making a microelectronic device including, on a same substrate, at least one electro-mechanical component including a mobile structure of a monocrystalline semi-conductor material and a mechanism actuating and/or detecting the mobile structure, and with at least one transistor. The method a) provides a substrate including at least one first semi-conducting layer including at least one region in which a channel area of the transistor is provided, b) etches a second semi-conducting layer based on a given semi-conductor material, lying on an insulating layer placed on the first semi-conducting layer, to form at least one pattern of the mobile structure of the component in an area of monocrystalline semi-conductor material of the second semi-conducting layer, and at least one pattern of gate of the transistor on a gate dielectric area located facing the given region.

Making of a microelectronic device including a monocrystalline silicon NEMS component and a transistor the gate of which is made in the same layer as the mobile structure of this component

A method for producing a device including at least one integrated circuit and at least one N/MEMS. The method produces the N/MEMS in at least one upper layer arranged at least above a first section of a substrate, produces the integrated circuit in a second section of the substrate and/or in a semiconductor layer arranged at least above the second section of the substrate, and further produces a cover encapsulating the N/MEMS from at least one layer used for production of a gate in the integrated circuit and/or for producing at least one electrical contact of the integrated circuit.

Device with integrated circuit and encapsulated N/MEMS and method for production

The device resonant comprises a plurality of synchronized oscillators. Each oscillator comprises a resonator which comprises detection means providing detection signals representative of oscillation of the resonator to a feedback loop connected to an excitation input of the resonator. The detection signals control the conductivity of the feedback loop of the oscillator. The excitation inputs of all the resonators are connected to a common point which constitutes the output of the resonant device. A capacitive load is connected between said common point and a reference voltage.

Resonant device with improved features

The invention relates to a detection device using at least one transistor () with a vertical channel, comprising a mechanical structure (), free to move relative to the transistor, in a plane containing the transistor drain (), source () and channel ().

Device sensitive to a movement comprising at least one transistor

The resonant device comprises an electromechanical resonator of nanometric or micrometric size that comprises a mobile element and a fixed element. Detection means provide detection signals representative of movement of the mobile element with respect to the fixed element to a feedback loop that is connected to an excitation input of the resonator. The resonator is formed on the same substrate as the detection means and feedback loop. The feedback loop comprises at most first and second transistors connected in series between a reference voltage and the excitation terminal. A capacitive load is connected between the excitation terminal and reference voltage. The detection signals control the conductivity of the first transistor.

Transistor-based micrometric or nanometric resonant device

A structure for separating and prepositioning a set of fibers, and a device designed to contain a set of separate fibers prepositioned using the structure. The separation and prepositioning structure includes at least one recess to contain and preposition a single fiber. The recess includes a bottom wall, a top wall, and at least one side wall formed by the side wall of a pattern with a front edge that is oblique with respect to the bottom wall of the recess. At least one inclined connection surface connects the oblique front edge to the rest of the side wall. The structure and device are applicable particularly to the alignment of optical fibers with microguides contained in an optical device.

Structure for separating and pre-positioning an assembly of fibers and device designed to receive an assembly of fibers

The invention relates to a process for fitting connectors to optical elements to an integrated optical circuit (26) consisting of connecting at least one optical element to this circuit such that the outputs and/or inputs of each element are located approximately in the same plane (xoz) as the inputs and/or outputs of this integrated optical circuit (26), also located in the same plane (xoz). This process comprises the following steps:

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Grenoble, France

Eric Ollier