Exagan

Freescale Semiconductor,inc.

Stmicroelectronics France

Eric Moreau

Laurent Guillot

Thierry Sutto

Pierre Turpin

Philippe Dupuy

A power circuit switching device comprises two switching terminals, a high-voltage depletion mode transistor and a low-voltage enhancement mode transistor arranged in series between the two switching terminals, a first terminal for receiving a switching signal and electrically connected via a driver circuit to the gate of the high-voltage transistor, and a second terminal for receiving a control signal and electrically connected to the gate of the low-voltage transistor. The device comprises a normally-on protection circuit electrically connected between the second terminal and the gate of the high-voltage transistor to keep the high-voltage transistor in an off-state when the driver circuit is not electrically powered.

Power circuit switching device having a passive protection circuit

An integrated circuit comprises a housing, a plurality of connection pins, a first chip that includes a high-voltage depletion mode transistor, and a second chip that includes a low-voltage enhancement mode transistor. The first chip and second chip each comprise a gate bump contact, a drain bump contact and a source bump contact. The source bump contact of the high-voltage transistor is electrically connected to the drain bump contact of the low-voltage transistor so as to form a central node of the circuit. The circuit includes at least one first Kelvin pin that is electrically connected to the source bump contact of the low-voltage transistor.

Integrated circuit comprising a chip formed by a high-voltage transistor and comprising a chip formed by a low-voltage transistor

A power circuit switching device includes two switching terminals; a high voltage depletion mode transistor and a low voltage enhancement mode transistor arranged in series between the two switching terminals; a control circuit having a first input for receiving a switching signal and a second input for receiving a signal for activating the device, the control circuit being configured to put the switching device into an inactive state or an active state; a driver circuit for applying the switching signal to the gate of the high voltage transistor, the driver circuit being supplied with a first voltage from a first voltage source (VDR+) and with a second voltage from a second voltage source (VDR&#x2212;), the first and second voltages being respectively higher and lower than the threshold voltage of the high voltage transistor; and at least one programming module associated with the driver circuit, configured to program the incoming current which is to be injected at the gate of the high voltage transistor, and the outgoing current which is to be drawn from the gate; the programming module being able to be connected to a first and a second passive component for programming the incoming current and outgoing current, respectively.

Power circuit switching device

An integrated circuit comprises a power device located on a die. The power device is operably coupled to a processing function, wherein the signal processing function is operably coupled to two or more temperature sensors. A first temperature sensor is operably coupled to the power device to measure a temperature of the power device and the second temperature sensor is located, such that it measures a substantially ambient temperature related to the die. The signal processing function determines the temperature gradient therebetween.

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Frouzins, France

Eric Moreau