Globalwafers Co., Ltd.

Eric Michael Gitlin

Soubir Basak

Parthiv Daggolu

Richard Joseph Phillips

William L Luter

Robert Wendell Standley

Gaurab Samanta

Benjamin Michael Meyer

HyungMin Lee

Nan Zhang

Jae-Woo Ryu

Jae Woo Ryu

Methods for forming single crystal silicon ingots with improved resistivity control and, in particular, methods that involve gallium or indium doping are disclosed. In some embodiments, the ingots are characterized by a relatively high resistivity.

Methods for forming single crystal silicon ingots with improved resistivity control

A crystal pulling system for growing a monocrystalline ingot from a melt of semiconductor or solar-grade material includes a crucible for containing the melt of material, a pulling mechanism configured to pull the ingot from the melt along a pull axis, and a multi-stage heat exchanger defining a central passage for receiving the ingot as the ingot is pulled by the pulling mechanism. The heat exchanger defines a plurality of cooling zones arranged vertically along the pull axis of the crystal pulling system. The plurality of cooling zones includes two enhanced-rate cooling zones and a reduced-rate cooling zone disposed vertically between the two enhanced-rate cooling zones.

Crystal pulling systems and methods for producing monocrystalline ingots with reduced edge band defects

Growing community of inventors

St. Peters, MO, United States of America

Eric Michael Gitlin