International Business Machines Corporation

Eric Mendel

Klaus D Beyer

Jacob Riseman

Jagtar S Basi

Seiki Ogura

Karen A Nummy

Nivo Rovedo

William L Guthrie

William J Patrick

William A Pliskin

Paul M Schaible

Charles L Standley

Stanley R Makarewicz

James S Makris

Kathleen A Perry

James R Hause

A method is disclosed for producing coplanar metal/insulator films on a substrate according to a chem-mech polishing technique. In one example, a substrate having a patterned insulating layer of dielectric material thereon, is coated with a layer of metal. The substrate is then placed in a parallel polisher and the metal is removed elsewhere except in the holes where it is left intact. This is made possible through the use of an improved selective slurry which removes the metal much faster than the dielectric material. The insulating layer may then be used as an automatic etch stop barrier. In a second example a substrate having a patterned metallic layer is coated with an insulating layer and then subjected to chem-mech polishing. The structure is coplanarized by the chem-mech removal of the insulating material from the high points of the structure at a faster rate than from the lower points. Optional etch stop layers also may be used.

Chem-mech polishing method for producing coplanar metal/insulator films

A chemical-mechanical (chem-mech) method for removing SiO.sub.2 protuberances at the surface of a silicon chip, such protuberances including 'bird's heads'. A thin etch stop layer of Si.sub.3 N.sub.4 is deposited onto the wafer surface, which is then chem-mech polished with a SiO.sub.2 water based slurry. The Si.sub.3 N.sub.4 acts as a polishing or etch stop barrier layer only on the planar portions of the wafer surface. The portions of the Si.sub.3 N.sub.4 layer located on the top and at the sidewalls of the 'bird's heads' and the underlying SiO.sub.2 protuberances are removed to provide a substantially planar integrated structure.

Method for removing protuberances at the surface of a semiconductor

A semiconductor wafer shape which when subjected to a simultaneous polishing of both wafer surfaces produces a wafer of superior flatness and surface finish, the said wafer having a diametral cross-sectional shape like that of a 'dogbone' wherein the wafer is thinner in its medial region than it is in the peripheral region and has rounded edges, this shape resulting from a chemical thinning operation.

Wafer shape and method of making same

Method for polishing amorphous aluminum oxide

A method for the chemical-mechanical polishing of titanium carbide surfaces to a high degree of perfection is described. The titanium carbide surfaces are continuously wetted with a water slurry containing a soft abrasive material. The continuously wiping of the titanium carbide surface is accomplished with a firm surface using pressure while maintaining a relative movement between the titanium carbide surface and the firm surface to remove the water reacted titanium carbide product from the high points of the titanium carbide surface. This method is continued until a high degree of perfection of the surface is accomplished. The slurry is typically composed of colloidal silicon dioxide dispersed in water. The titanium carbide surface can also include an aluminum oxide component. Where aluminum oxide is present it is preferred to have about 60 to 80% aluminum oxide and 40 to 20% titanium carbide by weight in the surface structure.

Method for polishing titanium carbide

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Poughkeepsie, NY, United States of America

Eric Mendel