Other

Intel Corporation

Eric M Henry

Ravi Pillarisetty

James S Clarke

Hubert C George

Roza Kotlyar

Lester Lampert

Stephanie A Bojarski

Brennen Karl Mueller

Thomas Francis Watson

Terry J McMains

Tanya R Sanchez

Samuel Frederick Neyens

Quantum dot devices with three of more accumulation gates provided over a single row of a quantum dot formation region are disclosed. Each accumulation gate is electrically coupled to a respective doped region. In this manner, multiple single electron transistors (SETs) are provided along the row. Side and/or center screening gates may be used to apply microwave pulses for qubit control and to control electrostatics so that source and drain regions of the multiple SETs with quantum dots formed along the single row of a quantum dot formation region are sufficiently isolated from one another. Such quantum dot devices provide strong spatial localization of the quantum dots, good control over quantum dot interactions and manipulation, good scalability in the number of quantum dots included in the device, and/or design flexibility in making electrical connections to the quantum dot devices to integrate the quantum dot devices in larger computing devices.

Quantum dot devices with side and center screening gates

A water drainage and harvesting system for use with an artificial turf field comprises permeable synthetic turf, permeable impact-absorbing sub-base material beneath the turf, a water collection basin below the field, a water reservoir below the collection basin, the basin and reservoir having an impermeable liner, a water tank in the reservoir, and a conduit from the tank that allows for filtered water to be pumped to the ground surface for reuse. The disclosure further relates to a method for the construction of such a water storage and conveyance system.

Water drainage and harvesting system for an artificial turf environment

Growing community of inventors

Forest Grove, OR, United States of America

Eric M Henry