Siliconware Precision Industries Co., Ltd.

Eric Ko

Chien-Ping Huang

Randy H Y Lo

Tzong-Da Ho

Jui-Meng Jao

Han-Ping Pu

Chih-Ming Huang

Chien Ping Huang

Chi-Chuan Wu

Vicky Liu

Jeng Yuan Lai

Raymond Jao

Alex Yang

A ball grid array semiconductor package is proposed, wherein at least a chip is mounted on a substrate, and signal pads on the chip are electrically connected to signal fingers on the substrate by bonding wires. A power plate and a ground plate are each attached at two ends thereof respectively to predetermined positions on the chip and substrate, without interfering with the bonding wires. No power ring or ground ring is necessarily formed on the substrate, thereby reducing restriction on trace routability of the substrate. Further, with no provision of power wires or ground wires, short circuit of the bonding wires is less likely to occur, and thus production yield is enhanced. In addition, the power plate and ground plate provide shielding effect for protecting the chip against external electric-magnetic interference, and are partly in direct contact with the atmosphere for improving heat dissipating efficiency of the semiconductor package.

Ball grid array semiconductor package and substrate without power ring or ground ring

A fine pitch wafer bumping process comprises: providing a wafer that has a plurality of contact pads exposed by a passivation layer formed on the surface of the wafer, wherein an under bump metal (UBM) is formed respectively on each contact pad; on the surface of the wafer, forming a first mask film having a plurality of first openings that expose respectively the under bump metals (UBM); filling a first solder material respectively in the first openings; reflowing the first solder material into a plurality of solder posts; on the first mask film, forming a second mask film having a plurality of second openings that respectively expose the first openings; filling a second solder material respectively in the second openings; reflowing the second solder material and the first solder posts; removing the first and second mask films; and reflowing the first and second solder posts to form a plurality of bumps.

Fine pitch wafer bumping process

A lead-frame-based chip-scale package (CSP) structure and a method of manufacturing the same are proposed. The proposed CSP structure is characterized in the use of a specially-designed lead frame having an inner-lead part and an outer-lead part, which each inner lead being formed with a deformed portion. During the encapsulation process, an epoxy molding compound (EMC) is formed to encapsulate the semiconductor die and the inner-lead part. By the proposed CSP structure, both sides of the inner-lead part can be wrapped by the EMC due to it being raised by the deformed portion to within the EMC. As a result, during the lead-singulation process, the inner-lead part can be firmly supported in position, thereby reducing the occurrence of micro cracks in the EMC above the inner-lead part that would otherwise occur in the prior art.

Lead-frame-based chip-scale package and method of manufacturing the same

A Quad Flat Non-Lead package of semiconductor comprises a chip, a plurality of leads, and a molding compound. The chip has its active surface bonded to the die pad, and the area of the die pad is smaller than that of the chip in order to expose the bonding pad on the active surface of the chip. The leads are disposed at the periphery of the die pad. A plurality of bonding wires is used to electrically connect the top surface of the leads to the bonding pads. The molding compound encapsulates the chip, the die pad, the bonding wires, and a portion of the surface of the leads. In this way, the encapsulating process make the side surface of the lead, and the portion excluding the wire-bonding protruded zone of the bottom surface of the lead exposed in order to make the leads become the external connections of the package structure.

Quad flat non-lead package of semiconductor

A method of fabricating a BGA (Ball Grid Array) IC package of the type having an encapsulating body is proposed, which allows the BGA IC package to be manufactured without having to use conventional organic substrate and encapsulating-body mold having cavity, so that the manufacture process can be more cost-effective to carry out than the prior art. The proposed method is characterized in the use of a copper piece which is selectively removed to form an encapsulating-body cavity for the forming of an encapsulating body therein. The proposed method requires no use of mold with cavity for the forming of the encapsulating body, allowing the same mold to be used for the fabrication of various BGA IC packages of different sizes. Moreover, the proposed method allows fan-in design as well as fan-out design, thus allowing the number of I/O ports to be increased while making the overall package configuration compact in size, and also allows the implantation of the electrically-conductive balls to be easier to carry out and more precisely controlled than the prior art, making the ball implantation more assured in quality than the prior art. Therefore, the proposed method is more advantageous and cost-effective to use than the prior art.

Method of fabricating a ball grid array integrated circuit package having an encapsulating body

A BGA (Ball-Grid Array) IC package with an unembedded type of heat-dissipation structure is proposed. The unembedded type of heat-dissipation structure is characterized in that a plurality of thermally-conductive vias are formed in the substrate and extending from the die-attachment area to the back side of the substrate; and further, a plurality of thermally-conductive balls are bonded to the thermally-conductive vias on the back side of the substrate. Moreover, a thermally-conductive layer is formed over a thermally-conductive area on the back side of the substrate on which the thermally-conductive balls are mounted for the purpose of increasing the exposed area of the overall heat-dissipation structure to the atmosphere. This allows the IC-produced heat during operation to be conducted through the thermally-conductive vias, the thermally-conductive balls, and the thermally-conductive layer to be dissipated the atmosphere. The unembedded manner of integration requires no openings to be formed in the substrate that would otherwise allow ambient moisture to enter into the inside of the package body as in the case of the prior art, and also allows the heat-dissipation structure to be more easily integrated to the package configuration. Due to these benefits, the BGA IC package can be manufactured through a more simplified and cost-effective process, while nevertheless providing a high heat-dissipation efficiency.

Ball-grid array integrated circuit package with an embedded type of heat-dissipation structure and method of manufacturing the same

A multi-chip module (MCM) integrated circuit package structure is proposed, which can be used to pack a plurality of semiconductor chips of different functions while nonetheless allowing the overall package size to be as small as some existing types of integrated circuit packages, such as the SO (Small Outline) and QFP (Quad Flat Package) types, so that it can be manufactured using the existing fabrication equipment. The proposed MCM integrated circuit package structure is characterized in the use of a substrate having a centrally-located opening, and at least one semiconductor chip is mounted on the front surface of the substrate and a semiconductor chip of a central-pad type having a plurality of centrally-located bonding pads is mounted on the back surface of the substrate with the centrally-located bonding pads being exposed through the opening. This arrangement allows the overall package size to be made very compact and also allows the wiring to the central-pad type semiconductor chip to be shortened.

Multi-chip module package structure

A multi-chip IC package for central pad chips is proposed, which can be used to pack one peripheral-pad IC chip and at least one central-pad IC chip therein. The multi-chip IC package includes a specially-designed lead frame having a central die pad and a lead portion separated from the central die pad by a gap. The central-pad IC chip is partly attached to the lead portion of the lead frame and partly attached to the central die pad of the lead frame such that the central pads on the central-pad IC chip can be aligned with the gap of lead frame so as to allow bonding wires electrically connecting the central-pad IC chip with the lead portion of the lead frame to pass therethrough. The characterized package allows the bonding wires applied to the central-pad IC chip to be short in length so as to retain IC performance and save manufacture cost, making this multi-chip IC package structure more advantageous to use than the prior art.

Multi-chip integrated circuit package structure for central pad chip

An universal lead frame type of Quad Flat Non-Lead package of semiconductor comprises a chip, a plurality of leads, a heat sink, and a molding compound. The leads are disposed at the periphery of the chip. The chip has its back surface bonded to the top surface of the heat sink, and the periphery of the top surface of the heat sink has a plurality of projections. The bonding portion at the periphery on the bottom surface of the heat sink is bonded to the top surface of the leads. The protruded portion at the center of the bottom surface of the heat sink is disposed in the opening region such that the bottom surface of the heat sink and the bottom surface of the leads are coplaner. The bonding pads of the chip are electrically connected to the top surface of the leads by a plurality of bonding wires. The molding compound encapsulates the chip, the heat sink, the top surface of the leads, and the bonding wires while exposes the protruded portion of the heat sink.

Universal lead frame type of quad flat non-lead package of semiconductor

A thermally enhanced quad flat non-lead package of semiconductor comprises a chip a plurality of leads, and a molding compound. The chip has its active surface bonded to the top surface of the die pad, and the area of the die pad is smaller than that of the chip in order to expose the bonding pads on the active surface of the chip. The leads are disposed at the periphery of the die pad wherein the bottom surface of the lead has a stepped structure with a relatively thin portion to form a wire-bonding protruded zone. A plurality of bonding wires is used to electrically connect the wire-bonding protruded zone of the leads to the bonding pads of the chip. The molding compound encapsulates the chip, bonding wires, the die pad, and a portion of the surface of the leads, but exposes the bottom surface of the die pad. In this way, the encapsulating process makes the side surface of the lead, and the portion excluding the wire-bonding protruded zone of the bottom surface of the lead exposed in order to make the lead become the external connecting points of the package structure.

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Taichung Hsien, Taiwan

Eric Ko