Asm IP Holding B.v.

Asm America, Inc.

Asm International N.v.

Asm IP Holdings B.v.

Eric James Shero

Carl Louis White

Mohith E Verghese

Kyle Fondurulia

Todd Robert Dunn

Suvi P Haukka

Herbert Terhorst

Michael Eugene Givens

Jereld Lee Winkler

Christophe F Pomarede

Petri Raisanen

Charles Dezelah

Jerry Winkler

Qi Xie

Giuseppe Alessio Verni

Shankar Swaminathan

Jan Willem Maes

Chang-Gong Wang

Paul F Ma

Fred Alokozai

Dong Li

Michael W Halpin

Bhushan Zope

Bed Prasad Sharma

Robert Brennan Milligan

Mike Halpin

Marko J Tuominen

Chiyu Zhu

Jaakko Anttila

Petri Räisänen

Timo Asikainen

Jeff Roberts

William George Petro

Tom E Blomberg

Vladimir Machkaoutsan

David Marquardt

Timothee Blanquart

Ren-Jie Chang

Glen Wilk

Timothy James Sullivan

Dinkar Nandwana

Jerry Peijun Chen

Jiyeon Kim

Marko Peussa

Brennan Milligan

YoungChol Byun

Darko Babic

Sokol Ibrani

Dave Marquardt

Dan Maurice

Fred Pettinger

Min Yan

Viljami J Pore

Michael A Todd

Eric Wang

Ankit Kimtee

Melvin Verbaas

René Henricus Jozef Vervuurt

Eric Christopher Stevens

Srini Raghavan

Henri Jussila

Petro Deminskyi

Michael Schmotzer

Xichong Chen

Raj Singu

Jonathan Robert Bakke

Christophe Pomarede

Joseph C Reed

Hao Wang

Luping Li

Dieter Pierreux

Hannu Huotari

Ravinder K Aggarwal

Bert Jongbloed

Werner Knaepen

Fu Tang

Lucian C Jdira

Elina Färm

Andrew M Yednak, Iii

Ronald R Stevens

Michael Givens

Jacob Huffman Woodruff

Sung-Hoon Jung

Eric Jen Cheng Liu

Shinya Iwashita

Ryan M Schmidt

Jan Willem Hub Maes

Roghayyeh Lotfi

Lifu Chen

Anthony Muscat

Mark Olstad

Olli Jylhä

Daniel Maurice

Abhishek Mangoli

Gejian Zhao

Jianqiu Huang

Christopher Wuester

Sung Hoon Jung

Shawn Miller

Joe Reed

Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Apparatus for providing a gas mixture to a reaction chamber and method of using same

Various embodiments of the present technology may provide methods and apparatus for cleaning a source vessel. The source vessel may be filled or partially filled with a solvent to form a solution. The solution is removed from the source vessel and contained in a waste vessel that is connected to the source vessel. The waste vessel may have a bellow or other mechanism inside of it to create a negative pressure in the waste vessel to pull the solution out of the source vessel and into the waste vessel. Alternatively, a liquid pump may be used to pull the solution from the source vessel to the waste vessel.

Methods and apparatus for cleaning a vessel

Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for forming a layer comprising vanadium and nitrogen

A semiconductor processing device is disclosed. The device can include a reactor and a solid source vessel configured to supply a vaporized solid reactant to the reactor. A process control chamber can be disposed between the solid source vessel and the reactor. The device can include a valve upstream of the process control chamber. A control system can be configured to control operation of the valve based at least in part on feedback of measured pressure in the process control chamber.

Semiconductor processing device

The present disclosure pertains to embodiments of a showerhead assembly which can be used to deposit semiconductor layers using processes such as atomic layer deposition (ALD). The showerhead assembly has a showerhead which has an increased thickness which advantageously decreases reactor chamber size and decreases cycling time. Decreased cycling time can improve throughput and decrease costs.

Showerhead assembly and components

A multiple-layer method for forming material within a gap on a surface of a substrate is disclosed. An exemplary method includes forming a layer of first material overlying the substrate and forming a layer of second (e.g., initially flowable) material within a region of the first material to thereby at least partially fill the gap with material in a seamless and/or void less manner.

Multiple-layer method and system for forming material within a gap

Showerhead assemblies, gas distribution plates, and systems including the same are disclosed. Exemplary showerhead assemblies include a gas distribution plate. Exemplary gas distribution plates include apertures designed to direct a flow of gas and to reduce stagnation of gas on surfaces of the plates.

Showerhead assembly and components thereof

A semiconductor device comprising a manifold for uniform vapor deposition is disclosed. The semiconductor device can include a manifold comprising a bore and having an inner wall. The inner wall can at least partially define the bore. A first axial portion of the bore can extend along a longitudinal axis of the manifold. A supply channel can provide fluid communication between a gas source and the bore. The supply channel can comprise a slit defining an at least partially annular gap through the inner wall of the manifold to deliver a gas from the gas source to the bore. The at least partially annular gap can be revolved about the longitudinal axis.

Manifolds for uniform vapor deposition

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises at least partially filling the gap with a gap filling fluid. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

Methods and systems for filling a gap

A workpiece susceptor body can include a front face configured to support a workpiece, a back face opposite the front face, a workpiece contact zone at least partially forming a support boundary on an inner portion of the front face, and a plurality of axial channels disposed within the susceptor body. The workpiece contact zone can be disposed radially inward of an outer edge of a workpiece positioned on the front face in a processing configuration. Each of the plurality of axial channels may connect to corresponding openings extending into an outer portion of the front face. Each of the openings may be disposed radially outward of the workpiece contact zone of the susceptor body.

Substrate susceptor using edge purging

Disclosed are methods and systems for depositing layers comprising a titanium, aluminum, and carbon. The layers are formed onto a surface of a substrate. The deposition process comprises a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Methods and systems for forming a layer comprising aluminum, titanium, and carbon

A method may comprise disposing vanadium tetrachloride in a delivery vessel; delivering the vanadium tetrachloride to a reaction chamber in fluid communication with the delivery vessel; mitigating the delivery of decomposition products of the vanadium tetrachloride to the reaction chamber; and/or applying the vanadium tetrachloride to a substrate disposed in the reaction chamber to form a layer comprising vanadium on the substrate.

Methods and systems for delivery of vanadium compounds

Vapor deposition processes for forming thin films comprising molybdenum on a substrate are provide. In some embodiments the processes comprise a plurality of deposition cycles in which the substrate is separately contacted with a vapor phase molybdenum precursor comprising a molybdenum halide, a first reactant comprising CO, and a second reactant comprising H. In some embodiments the thin film comprises MoC, MoC, or MoOC. In some embodiments the substrate is additionally contacted with a nitrogen reactant and a thin film comprising molybdenum, carbon and nitrogen is deposited, such as MoCN or MoOCN.

Vapor deposition of films comprising molybdenum

Threshold voltage (Vt) tuning layers may be sensitive to etching by reactants used to deposit overlying gate material, such as metal nitride. Methods for depositing Vt tuning layers are provided. In some embodiments Vt tuning layers may comprise a Vt tuning material in a neutral matrix. In some embodiments, processes for reducing or eliminating the etching of Vt tuning layers by halide reactants are described. In some embodiments a Vt tuning layer, such as a metal oxide layer, is treated by a nitridation process following deposition and prior to subsequent deposition of a metal nitride capping layer. In some embodiments an etch-protective layer, such as a NbO layer, is deposited over a Vt tuning layer prior to deposition of an overlying metal nitride layer.

Formation of gate stacks comprising a threshold voltage tuning layer

A method for forming a layer comprising SiOCN on a substrate is disclosed. An exemplary method includes thermally depositing the layer comprising SiOCN on a surface of the substrate. The layer comprising SiOCN can be used for various applications, including spacers, etch stop layers, and etch resistant layers.

Structure including SiOCN layer and method of forming same

Growing community of inventors

Phoenix, AZ, United States of America

Eric James Shero