Az Electronic Materials USA Corp.

Clariant (france) Sa

Clariant Chimie S.a.

Eric Jacquinot

Maurice Rivoire

Pascal Letourneau

Uwe Falk

Torsten Henning

Marie-Laure Perard

Armand Eranian

Didier Bouvet

Patrice Beaud

Catherine Euvrard

The instant invention relates to a process for the preparation of an aqueous suspension of anionic colloidal silica having a neutral pH which is stable over time and comprises individualized particles of colloidal silica which are not bound to one another by siloxane bonds. The instant suspensions show high storage stability and are particularly useful for the clarification of beer, for the preparation of cosmetic formulations, for the production of ink for printers, for paints and for anticorrosive treatments.

Process for the preparation of aqueous suspensions of anionic colloidal silica having a neutral PH and applications thereof

Process for the preparation of aqueous suspensions of anionic colloidal silica having a neutral pH and applications thereof

Abrasive composition for the integrated circuits electronics industry comprising an aqueous acid suspension of individualized colloidal silica particles not linked to each other by siloxane bonds and an abrasive surfactant, this abrasive being for mechanical chemical polishing in the integrated circuits industry, comprising a fabric impregnated by such a composition, and a process for mechanical chemical polishing.

Abrasive composition for the integrated circuit electronics industry

Abrasive composition for the integrated circuits electronics industry

Abrasive composition for the chemical-mechanical polishing in one stage of substrates used in the microelectronics semiconductors industry containing at least one metal layer and one insulator layer, comprising an acid aqueous suspension of individualized particles of colloidal silica, not linked to each other by siloxane bonds, having a mean particle diameter of between 5 and 20 nm and an oxidizing agent, and chemical-mechanical polishing process using such a composition.

Process for chemical-mechanical polishing of metal substrates

Process for mechanical chemical polishing of a layer of an aluminium or aluminium alloy conducting material used in the microelectronics semi-conductors industry in which said aluminium or aluminium alloy layer is abraded using an abrasive composition which comprises an alkaline aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, a tetraalkylammonium hydroxide and an oxidizing agent.

Process for mechanical chemical polishing of layer of aluminium or aluminium alloy conducting material

A composition for mechanical chemical polishing of a layer in an insulating material based on a polymer with a low dielectric constant, comprising an acid aqueous suspension of cationized colloidal silica containing individualized colloidal silica particles not linked to each other by siloxane bonds and water as the suspension medium, process for mechanical chemical polishing of a layer of insulating material based on a polymer with a low dielectric constant and abrasive for the mechanical chemical polishing of a layer of insulating material based on a polymer with a low dielectric constant.

Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant

Process for mechanical chemical polishing of a layer in a copper-based material using a polishing composition, characterized in that said polishing composition comprises an aqueous suspension of individualized colloidal silica particles not linked to each other by siloxane bonds, the average diameter of which is comprised between 10 and 100 nm, the pH of the aqueous suspension being comprised between 1 and 5.

Process for mechanical chemical polishing of a layer in a copper-based material

Silicoacrylic compositions which are fluid, polymerizable thermally or by radiation, by a radicular mechanism, with a very low water (less than 1.5%) and volatile solvent content containing silica, a silane and a multifunctional acrylic monomer, in which the silica is in the form of individualized particles, with an average diameter comprised between 5 and 100 nm, not linked together with siloxane bonds, the silane is a vinylsilane of formula (1)

Silicoacrylic compositions, preparation process and use for obtaining

Chemical mechanical polishing process for a layer of semiconductor material such as polycrystalline silicon, epitaxial single-crystal silicon, amorphous silicon or an isolating material such as phosphosilicate glass or borophosphosilicate glass used in the microelectronics semiconductors industry, with the exception of the initial silicon used in the manufacture of wafers for integrated circuits, in which an abrasion of the layer of semiconductor material or isolating material is carried out by rubbing the said layer with a fabric impregnated with an abrasive composition, the abrasive consisting of an aqueous suspension having a neutral pH or a pH close to neutrality of individualised colloidal silica particles, not linked together by siloxane bonds, and water as the suspension medium.

Chemical mechanical polishing process for layers of semiconductor or

Process for the chemical mechanical polishing of a layer of isolating material based on silicon or a silicon derivative, in which abrasion of the layer of isolating material is carried out by rubbing said layer using a fabric which brings into play an abrasive containing an acid aqueous solution of colloidal silica containing individualized colloidal silica particles, not linked together by siloxane bonds, and water as the suspension medium and new abrasives based on such suspensions.

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Trosly Breuil, France

Eric Jacquinot