General Electric Company

Emerson Electric Company

Martin Marietta Corporation

Pacific Bell

Eric J Wildi

Mark E Carrier

Wolfgang Daum

Raymond Albert Fillion

Michael Gdula

Robert J Wojnarowski

Hung M Pham

William P Kornrumpf

Herbert S Cole

Joseph Gerald Marcinkiewicz

Prakash B Shahi

William P Butler

Mario Ghezzo

Michael S Adler

Randy L Bomkamp

James E Kohl

Vikram Bidare Krishnamurthy

Kyung W Paik

Vojislav V Divljakovic

Bantval J Baliga

Stanton Earl Weaver, Jr

Sayed-Amr A El-Hamamsy

Steven Marc Gasworth

Charles S Korman

Bernard Gorowitz

Constantine A Neugebauer

Ronald B Bailey

James F Burgess

Thomas M Jahns

Tat-Sing P Chow

John P Walden

Robert S Scott

Michael W DeVre

Anthony A Immorlica, Jr

Wayne Alexander Kennedy

Deva N Pattanaya

Robert J Woinarowski

Vinod Kumar Singh

Assemblies for HVAC systems and methods of operating HVAC systems are disclosed, including a method of operating an HVAC system having a compressor assembly and a condenser assembly. The compressor assembly includes a compressor having a compressor motor that is susceptible to backspinning and capable of generating electric power when backspinning. The condenser assembly includes a condenser motor operatively coupled to a fan. The condenser assembly is electrically coupled to the compressor assembly. The method includes using the condenser motor as an electric load to dissipate electric power generated by the compressor motor when the compressor motor backspins.

Inhibiting compressor backspin via a condenser motor

Assemblies for HVAC systems and methods of operating HVAC systems are disclosed, including a method of operating an HVAC system having a condenser motor operatively coupled to a fan and a controllable bus voltage for powering the condenser motor. The method includes increasing the controllable bus voltage from a first voltage to a second voltage to increase a speed of the condenser motor.

HVAC condenser assemblies having controllable input voltages

Systems and methods for detecting various system conditions in a fluid delivery system (such as an HVAC system) based on a motor parameter are disclosed. Embodiments of the present invention relate to detecting: filter condition, frozen coil condition, register condition, energy efficiency, system failure, or any combination thereof. Embodiments of the present invention relate to detecting fluid delivery system conditions based on motor parameters including system current, system power, system efficiency, motor current, motor power, motor efficiency, and/or a change (or rate of change) in motor parameters. Techniques for responding to a clogged filter and a frozen coil are also disclosed. Also disclosed are techniques for characterizing a fluid delivery system off-site, prior to system installation.

System and method for detecting fluid delivery system conditions based on motor parameters

An apparatus for monitoring the status of the insulation on the wire in a winding in a device comprises a surrogate sample of insulating material having a thickness and properties selected to fail before the failure of the insulation on the wires in the winding, and a detector for detecting and indicating failure of the sample of insulating material. A method of monitoring the status of the insulation on the winding in a dynamoelectric device includes associating a surrogate sample of insulating material with the winding, monitoring the surrogate sample, and providing an alarm when the surrogate sample fails, which is predictive of the failure of the insulation on the winding wire.

Apparatus for and method of monitoring the status of the insulation on the wire in a winding

An electrically powered vehicle includes an inverter mounted in the vehicle, the inverter having a plurality of high power IGBT modules for converting DC power to AC power for application to a plurality of AC electric motors connected in driving relationship to wheels on the vehicle. Each of the IGBT modules is mounted in thermal transfer relationship to an electrically isolated base plate and each base plate has a plurality of closely spaced, parallel slots formed across one surface with a plurality of fins fitted into the slots and extending from the base plate. The system includes apparatus for mounting the IGBT modules to a wall separating an electronics compartment from an air supply and air exhaust compartment. Air from an air supply plenum in the air supply compartment is directed into the fins extending from the IGBT base plate and exhaust through an exhaust conduit. The vehicle includes a blower to force air to flow through the fins extending from the base plate.

High power inverter air cooling

Apparatus for and method of monitoring the status of the insulation on

A magnetic circulator is incorporated into a multi-chip module using a microwave high density interconnect (HDI) structure. A prepackaged circulator can be inserted into a ready-made high density interconnected multi-chip module; this prepackaged circulator may use a stripline design having a signal line with two ground planes above and below the signal line, or a microstrip transmission line design having one signal line and one ground plane below the signal line. Alternatively a circulator can be manufactured directly in a high density interconnected multi-chip module, with a stripline, or a microstrip transmission line design.

Fabrication of compact magnetic circulator components in microwave

Power semiconductor device structures and assemblies with improved heat dissipation characteristics and low impedance interconnections include a thermally-conductive dielectric layer, such as diamondlike carbon (DLC) overlying at least portions of the active major surface of a semiconductor chip, with vias formed in the dielectric layer in alignment with contact pads on the active major surface. A patterned metallization layer is formed over the thermally-conductive dielectric layer, with portions of the metallization layer extending through the vias into electrical contact with the chip contact pads. A metal structure is electrically and thermally coupled to selected areas of the patterned metallization, such as by solder bonding or by a eutectic bonding process. In different embodiments, the metal structure may comprise a metal conductor bonded to the opposite major surface of another power semiconductor device structure, a heat-dissipating device-mounting structure, or simply a low-impedance lead.

Direct stacked and flip chip power semiconductor device structures

Substrate material is molded directly to semiconductor chips and other electrical components that are positioned for integrated circuit module fabrication. Chips having contact pads are placed face down on a layer of adhesive supported by a base. A mold form is positioned around the chips. Substrate molding material is added within the mold form, and the substrate molding material is then hardened. A dielectric layer having vias aligned with predetermined ones of the contact pads and having an electrical conductor extending through the vias is situated on the hardened substrate molding material and the faces of the chips. A thermal plug may be affixed to the backside of a chip before substrate molding material is added. A connector frame may be placed on the adhesive layer before substrate molding material is added. A dielectric layer may be placed over the backsides of the chips before the substrate molding material is added to enhance repairability. A portion of the chips and substrate molding material may be removed after the substrate molding material is hardened.

Embedded substrate for integrated circuit modules

In fabricating wafer scale integrated interconnects, a temporary or permanent dielectric layer and a pattern of electrical conductors are used to provide wafer scale integration or testing and burn-in. A resist can be used to cover the areas of IC pads on the wafer while the remainder of the pattern of electrical conductors is removed to provide for repair of the wafer scale integration structure. The pattern of electrical conductors may be configured so that the conductor lengths between at least some sub-circuits on a plurality of wafers are substantially electrically equal for signal propagation purposes; an additional wafer may be laminated to the wafer using an adhesive; controlled curfs may be cut into the wafer; and the wafer may be interconnected to an interface ring.

Wafer level integration and testing

Method for fabricating an integrated circuit module

A high voltage P-N diode includes a P.sup.- substrate with a thin N.sup.- epitaxial layer thereon. An N.sup.+ cathode region extends into the N.sup.- epitaxial layer from the upper surface thereof. A P.sup.+ anode region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region. An N.sup.+ buried layer is situated between the P.sup.- substrate and the N.sup.- epitaxial layer, beneath the P.sup.+ anode region, and surrounds the N.sup.+ cathode region, as viewed from above. A further P.sup.+ region extends into the N.sup.- epitaxial layer from its upper surface and surrounds the N.sup.+ cathode region, and, in turn, is surrounded by the P.sup.+ anode region. In an exemplary embodiment, a MOSFET is included to alternately connect the further P.sup.+ region to the P.sup.- substrate and to open circuit the further P.sup.+ region. With the further P.sup. + region open circuited, the P-N diode has a low on-resistance when it operates in its current-conducting state. An embodiment structurally similar to the P-N diode comprises a bipolar transistor having an N.sup.+ emitter region extending into a P.sup.+ base region, which corresponds to the P.sup.+ anode region of the diode.

High voltage semiconductor devices with reduced on-resistance

An integrated circuit in which a large potential can be maintained between the source of the device and the substrate on which this device and other devices are fabricated is described. The circuit employs a minority carrier sink region to remove minority carriers from the gate region of a MOS depletion device. The sink region is shielded from the substrate by a buried layer which prevents punch-through between the sink region and the substrate.

High-voltage pull-up device

Growing community of inventors

Ladue, MO, United States of America

Eric J Wildi