Semitool, Inc.

Applied Materials, Inc.

Fresenius Medical Care Holdings, Inc.

Other

Varian Semiconductor Equipment Associates, Inc.

Eric J Bergman

John Lee Klocke

Kyle Moran Hanson

Paul R McHugh

Gregory J Wilson

David Yuds

Jonathan Leclerc

Timothy J Reardon

Mignon P Hess

Dana R Scranton

Craig P Meuchel

Jessica Steuber

Ian Sharp

Stuart Crane

Raymon F Thompson

Nolan Layne Zimmerman

Marvin L Bernt

Paul Van Valkenburg

Adam Marc McClure

H Frederick Woods

Timothy G Stolt

Tricia A Youngbull

Aleksander Owczarz

Robert W Berner

Richard W Plavidal

Martin C Bleck

Mikael R Borjesson

Kwan Wook Roh

Sam Lee

Eric Lund

Jing Xu

Deepak Saagar Kalaikadal

Michael Windham

Maria Tamayo-Coffey

David Oberlitner

Gil Lund

Thomas H Oberlitner

Prayudi Lianto

Robert Douglas Mikkola

Kwangduk Douglas Lee

Arvind Sundarrajan

Guan Huei See

Lynn E Jensen

Roland Levin

Jeffry Alan Davis

You Wang

Terrance Y Lee

Diego Suarez Del Real Pena

Rajesh Prasad

Stephen A Merchant

Kyu-Ha Shim

Erik Lund

Worm Lund

Harry S Whitesell

Jason A Rye

Charles Sharbono

Gordon Ray Nelson

Mary Vasseur Finn

Christopher Yim Chau

Ken Chhi

Lorenzo Tomas Castillo

David P Surdock

Mohamed Rafi

Tzu-Yu Liu

Roland Schwarz

Joseph Antony Jonathan

Andrew Anten

Ning Zhan

Cival Van Der Lubbe

Graeme Bell

Areeba Zakir

Laura Chang

Jeffrey J Dennison

Joe Lanfrankie

C James Bryer

Ronald G Breese

Thomas Maximilia Gebhart

Thomas Maximilian Gebhart

Muhammad Azim

Kuma Hsiung

James Cournoyer

James E Brown

Exemplary methods of electroplating include contacting a patterned substrate with a plating bath in an electroplating chamber, where the pattern substrate includes at least one opening having a bottom surface and one or more sidewall surfaces. The methods may further include forming a nanotwin-containing metal material in the at least one opening. The metal material may be formed by two or more cycles that include delivering a forward current from a power supply through the plating bath of the electroplating chamber for a first period of time, plating a first amount of the metal on the bottom surface of the opening on the patterned substrate and a second amount of the metal on the sidewall surfaces of the opening, and delivering a reverse current from the power supply through the plating bath of the electroplating chamber to remove some of the metal plated in the opening on the patterned substrate.

Electrochemical depositions of nanotwin copper materials

The present teachings may generally include a first fluid connector that includes a first body having a first central cavity that defines a first fluid pathway and a first seal within the first central cavity. The first seal includes a pair of first interfacing elements positioned adjacent one another at a distal end of the first seal and a first opening configured to remain sealed closed when the first interfacing elements are adjacent, and the first opening opens when the first interfacing elements are separated. The first connector is configured to fluidly connect to a second connector by engaging the first interfacing elements and with a pair of second interfacing elements of the second connector, thereby causing both pairs of first and second interfacing elements to separate causing the opening of first opening and second opening.

Self-sealing fluid connectors

A device for detecting potential health issues includes a retinal scanner configured to capture retinal data of the user, a blood pressure sensor configured to capture blood pressure data of the user, an alert module configured to alert the user of a potential health risk, and at least one processor communicatively coupled to the retinal scanner, the blood pressure sensor, and the alert module.

Systems and methods for detection of potential health issues

A thermal protection system configured for use with a dialysate container or bag in a dialysis system is disclosed. The thermal protection system being configured so that when the dialysate container is subjected to a temperature greater than a predetermined temperature such as, when the dialysate container is heated within a microwave oven, the thermal protection system is configured to (i) prevent the flow of dialysate from the bag, (ii) indicate that the dialysate container has been subjected to a temperature greater than the predetermined temperature, or (iii) a combination thereof. In one embodiment, the thermal protection system is a circular hollow ring positioned within an exit port of the bag, the ring melting upon reaching the predetermined temperature to block the flow of dialysate. Alternatively, and/or in addition, the thermal protection system may be a thermally sensitive dye configured to change color upon being subjected to the predetermined temperature.

Thermal protection system for a dialysate container

A system may include a first semiconductor processing station configured to deposit a material on a first semiconductor wafer, a second semiconductor processing station configured perform measurements indicative of a thickness of the material after the material has been deposited on the first semiconductor wafer, and a controller. The controller may be configured to receive the measurements from the second station; provide an input based on the measurements to a trained model that is configured to generate an output that adjusts an operating parameter of the first station such that the thickness of the material is closer to a target thickness; and causing the first station to deposit the material on a second wafer using the operating parameter as adjusted by the output.

Parameter adjustment model for semiconductor processing chambers

In one embodiment, an electroplating cell for depositing a metal onto a surface of a substrate includes an electroplating chamber configured to receive an electrolyte containing metal ions and a substrate having a surface disposed to contact the electrolyte, wherein the surface of the substrate is configured to serve as a cathode and wherein the surface of the substrate includes an anomaly region at or near the outer perimeter of the surface of the substrate, an anode disposed in the electrolyte chamber, a shielding device disposed between the cathode and the anode to shield the anomaly section, an oscillator configured to impart a relative oscillation between the cathode and the shielding device, and a power source to cause an electric field between the anode and the cathode.

Systems and methods for shielding features of a workpiece during electrochemical deposition

An electroplating system has a vessel assembly holding an electrolyte. A weir thief electrode assembly in the vessel assembly includes a plenum inside of a weir frame. The plenum divided into at least a first, a second and a third virtual thief electrode segment. A plurality of spaced apart openings through the weir frame lead out of the plenum. A weir ring is attached to the weir frame and guides flow of current during electroplating. The electroplating system provides process determined radial and circumferential current density control and does not require changing hardware components during set up.

Electroplating system

Exemplary methods of electroplating a metal with a nanotwin crystal structure are described. The methods may include plating a metal material into at least one opening on a patterned substrate, where at least a portion of the metal material is characterized by a nanotwin crystal structure. The methods may further include polishing an exposed surface of the metal material in the opening to reduce an average surface roughness of the exposed surface to less than or about 1 nm. The polished exposed surface may include at least a portion of the metal material characterized by the nanotwin crystal structure. In additional examples, the nanotwin-phased metal may be nanotwin-phased copper.

Nanotwin copper materials in semiconductor devices

Exemplary methods of plating are described. The methods may include contacting a patterned substrate with a plating bath in a plating chamber. The patterned substrate includes at least one metal interconnect with a contact surface that is exposed to the plating bath. The metal interconnect is made of a first metal characterized by a first reduction potential. The methods further include plating a diffusion layer on the contact surface of the metal interconnect. The diffusion layer is made of a second metal characterized by a second reduction potential that is larger than the first reduction potential of the first metal in the metal interconnects. The plating bath also includes one or more ions of the second metal and a grain refining compound that reduces the formation of pinhole defects in the diffusion layer.

Diffusion layers in metal interconnects

A delivery robot is provided for the delivery of home dialysis supplies to a home dwelling of a home dialysis patient. The delivery robot can be an autonomous delivery robot. The delivery robot can have an outdoor set of wheels or other traction devices, and an indoor set of wheels or other traction devices. The delivery robot can be configured to switch between an outdoor configuration for traversing an outdoor surface, and an indoor configuration for traversing an inside surface, inside the home of the home dialysis patient. A network is also provided and can include a robot delivery vehicle, a warehouse, a remote computer within the patient's home, or a combination thereof. Methods of delivering home dialysis supplies are also provided that utilize the delivery robot and network.

Home dialysis supplies delivery robot, network, and method

Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.

Substrate cleaning components and methods in a plating system

Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

Fluid recovery in semiconductor processing

Methods and apparatus for reducing the formation of insoluble deposits in semiconductor electrochemical plating equipment or a surface thereof during electrochemical plating, including: removing electrochemical plating equipment or a surface thereof from an electroplating solution, wherein residual electroplating solution is disposed atop the electrochemical plating equipment or a surface thereof, and wherein the residual electroplating solution has a first pH; contacting the residual electroplating solution with a rinse agent having a second pH similar to the first pH to form a rinsate; and removing the rinsate from the electrochemical plating equipment or a surface thereof.

Methods of reducing or eliminating deposits after electrochemical plating in an electroplating processor

In a method for removing an organic adhesive from a glass carrier in a semiconductor manufacturing process, the glass carrier is placed into a process chamber. The glass carrier is rotated and heated sulfuric acid is applied or sprayed onto the glass carrier. Ozone is introduced into the process chamber. The ozone diffuses through the sulfuric acid to the organic adhesive on the surface of the glass carrier. The sulfuric acid and the ozone chemically react with the organic adhesive and remove it from the glass carrier.

Glass carrier cleaning using ozone

Growing community of inventors

Kalispell, MT, United States of America

Eric J Bergman