Asml Netherlands B.v.

Eric Henri Jan Hendrickx

Richard Johannes Franciscus Van Haren

Jozef Maria Finders

Mircea Dusa

Alexander Hendrikus Martinus Van Der Hoff

Luis Alberto Colina Santamaria Colina

Guido Constant Simon Schiffelers

Geert Vandenberghe

Joern-Holger Franke

A method for reducing M3D effects on imaging is described. The method includes identifying points within a source plane of the photolithography system that are associated with pattern shifts resulting from diffraction of light off a photomask under an angle of incidence between an imaging beam of radiation and the mask normal, determining pattern shifts associated with the identified source plane points, and modifying the source to reduce the determined pattern shifts.

Method and apparatus for photolithographic imaging

A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.

Marker structure, mask pattern, alignment method and lithographic method and apparatus

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Linden, Belgium

Eric Henri Jan Hendrickx