Lightspin Technologies Inc.

Other

Purdue Research Foundation

Yale University

Eric Harmon

David B Salzman

Jerry M Woodall

George H Goble

Robert David Koudelka

Charles R Allen

Jong-Hyeok Jeon

Jeffrey T Ziebarth

Hironori Tsukamoto

Yuan Zheng

James T Hyland

Thomas Boone

Kurt C Koehler

A gamma-ray detector includes a plurality of modular one-dimensional arrays of monolithic detector sub-modules. Each monolithic detector sub-module includes a scintillator layer, a light-spreading layer, and a photodetector layer. The photodetector layer comprises a two-dimensional array of photodetectors that are arranged in columns and rows. A common printed circuit board is electrically coupled to the two-dimensional array of photodetectors of the plurality of modular one-dimensional arrays of monolithic detector sub-modules of a corresponding modular one-dimensional array. The two-dimensional array of photodetectors can be electrically coupled in a split-row configuration or in a checkerboard configuration. The two-dimensional array of photodetectors can also have a differential readout.

Modular pet detector comprising a plurality of modular one-dimensional arrays of monolithic detector sub-modules

A position-sensitive photodetector device includes a grid of series-connected photodetectors that are electrically coupled to either a vertical photodetector array (VA photodetectors) or to a horizontal photodetector array (HA photodetectors). The VA and HA photodetectors are arranged in an alternating sequence along rows and/or columns throughout the grid. A horizontal-position readout line is electrically coupled to a termination of each vertical photodetector array, and a vertical-position readout line is electrically coupled to a termination of each horizontal photodetector array.

Scalable position-sensitive photodetector device

This disclosure is directed to devices and systems and methods comprising virtual negative beveled facets including to isolate adjacent devices from one another. Aspects hereof are directed to integrated photon detectors or photodetector devices incorporating implant isolation mesas and resistors, and in particular to methods and structures for isolating such detectors or devices from neighboring detectors or devices.

Virtual negative bevel and methods of isolating adjacent devices

A photodetector includes an array of pixels, each pixel comprising a defined doped region defined in a doped semiconductor layer. The defined doped region is defined by selected regions of ion implants to provide resistive isolation between each defined doped region. A capacitor is formed by the defined doped region and a metal layer disposed above the doped semiconductor layer. A contact metal line is disposed above the doped semiconductor layer. The capacitor metal and contact metal lines are electrically coupled together and are in electrical communication with the output of the photodetector array.

Integrated avalanche photodiode arrays

The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.

Integrated Avalanche Photodiode arrays

A novel detector apparatus and detection method for measuring temperature exploit the avalanche transition edge, and are useful for contact and remote sensing & imaging and microbolometry of thermal, THz, LWIR/MWIR/SWIR/NIR, and visible light. The invention allows uncooled operation at kHz frame rates.

Microbolometer and pixel exploiting avalanche breakdown

A fuel for splitting water into hydrogen and an oxide component comprises a substantially solid pellet formed from a solid-like mixture of a solid-state source material capable of oxidizing in water to form hydrogen and a passivation surface layer of the oxide component, and a passivation preventing agent that is substantially inert to water in an effective amount to prevent passivation of the solid-state material during oxidation. The pellets may be introduced into water or other suitable oxidizer in a controlled rate to control the rate of reaction of the source material with the oxidizer, and thereby control the rate of formation of hydrogen. Methods are described for producing the solid-like mixture in varying weight percent of source material to passivation preventing agent.

Power generation from solid aluminum

The invention, called hypercontacting, achieves a very high level of activated doping at an exposed surface region of a compound semiconductor. This enables production of low resistance ohmic contacts by creating a heavily doped region near the contact. Such region lowers the contact's tunneling barrier by decreasing the extent of the depletion region at the contact, thereby reducing resistance.

Hypercontacting

Methods are disclosed for producing highly doped semiconductor materials. Using the invention, one can achieve doping densities that exceed traditional, established carrier saturation limits without deleterious side effects. Additionally, highly doped semiconductor materials are disclosed, as well as improved electronic and optoelectronic devices/components using said materials. The innovative materials and processes enabled by the invention yield significant performance improvements and/or cost reductions for a wide variety of semiconductor-based microelectronic and optoelectronic devices/systems. Materials are grown in an anion-rich environment, which, in the preferred embodiment, are produced by moderate substrate temperatures during growth in an oxygen-poor environment. The materials exhibit fewer non-radiative recombination centers at higher doping concentrations than prior art materials, and the highly doped state of matter can exhibit a minority carrier lifetime dominated by radiative recombination at higher doping levels and higher majority carrier concentrations than achieved in prior art materials. Important applications enabled by these novel materials include high performance electronic or optoelectronic devices, which can be smaller and faster, yet still capture or emit light efficiently, and high performance electronics, such as transistors, which can be smaller and faster, yet cooler.

Methods of hyperdoping semiconductor materials and hyperdoped semiconductor materials and devices

This disclosure describes a structure for transistor devices formed from compound semiconductor materials; and particularly for heterojuntion bipolar transistors (HBTs); and more particularly for the collector structure of a double HBT (DHBT). The invention enables high output power at high frequency operation, of high frequency operation at high output power.

Growing community of inventors

Norfolk, MA, United States of America

Eric Harmon