Lam Research Corporation

Eric H Lenz

Rajinder Dhindsa

Lumin Li

Fangli J Hao

Mukund Srinivasan

Reza Sadjadi

Enrico Magni

Keith E Dawson

Felix Leib Kozakevich

Mike Ravkin

Albert R Ellingboe

Jose V Tong

Eric A Hudson

Douglas L Keil

Robert J O'Donnell

Mark Henry Wilcoxson

Aaron Eppler

Zhisong Huang

Robert D Dible

Jose Tong Sam

Alexander A Yatskar

Albert M Lambson

Michal Danek

S M Reza Sadjadi

Jian J Chen

Randall S Mundt

Ji Soo Kim

Raj Dhindsa

Dave Trussell

David R Kerr

Raymond L Degner

Henry Brumbach

Andy W DeSepte

Jeffrey S Marks

Patrick A Van Cleemput

Andras Kuthi

Anand Chandrashekar

Joshua Collins

Sanjay Gopinath

Leonard Wai Fung Kho

James V Tietz

William S Kennedy

Jisoo Kim

Dean Jay Larson

Tsung-Han Yang

Camelia Rusu

Ricky Marsh

Shruti Vivek Thombare

Gang Liu

William M Denty, Jr

Daxing Ren

Ren Zhou

Robert C Hefty

Bruno Morel

Bin Luo

Novy Sastrawati Tjokro

Russell Martin

Peter Krotov

Gorun Butail

Michael Bowes

Vinayakaraddy Gulabal

Ravi Vellanki

Yen-Chang Chen

Robert A Frazier

Suresh Gupta

Ivo A Miller

Mark Gahagan

Michael L Calvisi

Rick Caple

Laura M Braun

Prodyut Majumder

Manjesh Shankarnarayana

Rajindar Dhindsa

Jim Tietz

Reza S M Sadjadi

Provided herein are methods and apparatuses for controlling uniformity of processing at an edge region of a semiconductor wafer. In some embodiments, the methods include providing a backside inhibition gas as part of a deposition-inhibition-deposition (DID) sequence.

Backside reactive inhibition gas

Showerheads for semiconductor processing operations are disclosed that have removable faceplates and various features that provide additional benefit in the context of removable faceplates.

Removable showerhead faceplate for semiconductor processing tools

Various showerheads and methods are provided. A showerhead may include a faceplate partially defined by a front surface and a back surface, a back plate having a gas inlet, a first conical frustum surface, and a second conical frustum surface, a plenum volume fluidically connected to the gas inlet and at least partially defined by the gas inlet, the back surface of the faceplate, the first conical frustum surface, and the second conical frustum surface, and a baffle plate positioned within the plenum volume, and having a plurality of baffle plate through-holes extending through the baffle plate. The second conical frustum surface may be positioned radially outwards from the first conical frustum surface with respect to a center axis of the showerhead, and the second conical frustum surface may be positioned along the center axis farther from the gas inlet than the first conical frustum surface.

Metal deposition

An apparatus for semiconductor processing that includes a pedestal that includes a wafer support surface that includes a plurality of mesas and a pattern of grooves is provided. Each mesa may be bracketed between two or more grooves, each mesa may include a plurality of mesa side walls that intersect, at least in part, with one of the grooves and with a mesa top surface that is a substantially planar surface, the mesa top surfaces may be substantially coplanar with each other, and the mesa top surfaces may be configured to support a wafer during semiconductor operations.

Wafer support pedestal with wafer anti-slip and anti-rotation features

A vaporizer system is provided that allows for rapid shifts in the flow rate of a vaporized reactant while maintaining a constant overall flow rate of vaporized reactant and carrier gas.

Vapor delivery method and apparatus for solid and liquid precursors

A system for supplying precursor gas to a substrate processing chamber includes a first mass flow controller including an inlet to receive a carrier gas and an outlet. An ampoule is configured to supply a precursor gas. A valve system, in fluid communication with the first mass flow controller and the ampoule, is configured to supply the precursor gas and the carrier gas to a momentum-based flow restriction member. A pressure sensing system is configured to sense an inlet pressure at an inlet of the momentum-based flow restriction member and an outlet pressure at an outlet of the momentum-based flow restriction member. A controller is configured to determine a flow rate of the precursor gas at the outlet of the momentum-based flow restriction member based on a difference between the inlet pressure and the outlet pressure.

Systems and methods for measuring entrained vapor

Apparatus, methods and systems for physically confining a liquid medium applied over a semiconductor wafer include a chemical head. The chemical head including multiple first return conduits formed from a first flat region in a head surface and multiple second return conduits formed from a second flat region in the head surface. The second flat region being disposed immediately adjacent to the first flat region and the second flat region being in a plane substantially parallel to and offset from the first flat region. At least one of the first return conduits and the second return conduits being formed at a first angle relative to the head surface and the first angle being greater than about 20 degrees to a meniscus plane normal.

Method and apparatus for physical confinement of a liquid meniscus over a semiconductor wafer

A method of providing airflow management in a substrate production tool includes providing a first mechanism coupling the substrate production tool to a fan filter unit. The fan filter unit provides filtered air to the substrate production tool. A second mechanism couples the substrate production tool to a reduced pressure exhaust mechanism. The reduced pressure exhaust mechanism provides an exhaust for excess gas flow within the substrate production tool. A substrate process area of the substrate production tool is maintained at a lower pressure than a pressure of a substrate transfer section of the substrate production tool. The substrate process area maintains a higher pressure than a pressure of the reduced pressure exhaust mechanism. The substrate transfer section maintains a higher pressure than the pressure of the reduced pressure exhaust mechanism.

Airflow management for low particulate count in a process tool

Methods of measuring gas flow rates in a gas supply system for supplying gas to a plasma processing chamber are provided. In a differential flow method, a flow controller is operated at different set flow rates, and upstream orifice pressures are measured for the set flow rates at ambient conditions. The measured orifice pressures are referenced to a secondary flow verification method that generates corresponding actual gas flow rates for the different set flow rates. The upstream orifice pressures can be used as a differential comparison for subsequent orifice pressure measurements taken at any temperature condition of the chamber. In an absolute flow method, some parameters of a selected gas and orifice are predetermined, and other parameters of the gas are measured while the gas is being flowed from a flow controller at a set flow rate through an orifice. In this method, any flow controller set point can be flowed at any time and at any chamber condition, such as during plasma processing operations. Gas supply systems are also disclosed.

Methods for verifying gas flow rates from a gas supply system into a plasma processing chamber

A wafer cleaning chamber comprising a plurality of carrier arms each having concentrically-mounted midpoints between opposing ends of the carrier arms with a wafer carrier mounted on each of the opposing ends of the carrier arms. A hub includes a plurality of concentrically mounted drives where each of the plurality of drives is coupled near the midpoint of a respective one of the plurality of carrier arms. Each of the plurality of drives is configured to be controlled independently of the remaining plurality of concentrically-mounted drives. A respective motor is coupled to each of the concentrically mounted drives and is configured to move the coupled carrier arm in a rotary manner under control of a program containing a velocity profile. At least one cleaning chemical-supply head is positioned proximate to a path of the wafer carriers.

High throughput cleaner chamber

A chamber includes a lower electrode and an upper electrode. The lower electrode is defined to transmit a radiofrequency current through the chamber and to support a semiconductor wafer in exposure to a plasma within the chamber. The upper electrode is disposed above and in a spaced apart relationship with the lower electrode. The upper electrode is electrically isolated from the chamber and is defined by a central section and one or more annular sections disposed concentrically outside the central section. Adjacent sections of the upper electrode are electrically separated from each other by a dielectric material. Multiple voltage sources are respectively connected to the upper electrode sections. Each voltage source is defined to control an electric potential of the upper electrode section to which it is connected, relative to the chamber. The electric potential of each upper electrode section influences an electric potential of the plasma within the chamber.

Apparatus and method for controlling plasma potential

A method for meniscus processing a substrate is provided. The method initiates with generating a meniscus spanning at least a length of the substrate. A pre-wetting liquid or vapor is dispensed. A substrate is moved through the dispensed pre-wetting liquid or vapor and the meniscus. The dispensed pre-wetting vapor condenses a pre-wetting liquid over a region of the substrate adjacent to a region of the substrate where the meniscus is generated. The pre-wetting liquid is deposited without substantially generating surface flow of the pre-wetting liquid on the substrate, and the pre-wetting liquid prevents the leading edge of the meniscus from contacting a dry surface region of the substrate.

Prevention of particle adders when contacting a liquid meniscus over a substrate

In various exemplary embodiments described herein, a system and related method to provide airflow management system in a substrate production tool includes a housing to couple the substrate production tool to a fan filter unit to provide filtered air to the housing, a facility connection to couple the substrate production tool to a reduced pressure exhaust mechanism, a substrate transfer section coupled below the housing and in airflow communication with the facility connection, and a substrate process area coupled to the substrate transfer section by one or more substrate transfer slots. A chamber substantially containing the substrate transfer section and the substrate process area is coupled to the housing to receive the filtered air and to the facility connection to provide an exhaust for excess gas flow. The chamber maintains a low pressure in the substrate process area relative to the substrate transfer section.

A plasma processing apparatus includes a heater in thermal contact with a showerhead electrode, and a temperature controlled top plate in thermal contact with the heater to maintain a desired temperature of the showerhead electrode during semiconductor substrate processing. A gas distribution member supplies a process gas and radio frequency (RF) power to the showerhead electrode.

Apparatus including showerhead electrode and heater for plasma processing

A plasma processing apparatus includes a gas distribution member which supplies a process gas and radio frequency (RF) power to a showerhead electrode. The gas distribution member can include multiple gas passages which supply the same process gas or different process gases at the same or different flow rates to one or more plenums at the backside of the showerhead electrode. The gas distribution member provides a desired process gas distribution to be achieved across a semiconductor substrate processed in a gap between the showerhead electrode and a bottom electrode on which the substrate is supported.

Apparatus including gas distribution member supplying process gas and radio frequency (RF) power for plasma processing

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San Jose, CA, United States of America

Eric H Lenz