Infineon Technologies Ag

Eric Graetz

Werner Robl

Evelyn Napetschnig

Stefan Woehlert

Tobias Schmidt

Kamil Karlovsky

Paul Frank

Michael Ehmann

Frank Wagner

Gretchen Adema

Joachim Seifert

Thomas Bertaud

Anton Mauder

Hermann Bilban

Rudolf Pairleitner

An electronic device, an electronic module comprising the electronic device and methods for fabricating the same are disclosed. In one example, the electronic device includes a semiconductor substrate and a metal stack disposed on the semiconductor substrate, wherein the metal stack comprises a first layer, wherein the first layer comprises NiSi.

Electronic device, electronic module and methods for fabricating the same

A power semiconductor device includes a semiconductor body. The semiconductor body includes an active semiconductor region and a perimeter semiconductor region surrounding the active semiconductor region. The active semiconductor region has an active surface area, and the perimeter semiconductor region has a perimeter surface area. The power semiconductor device further includes a test structure for contactless testing of the perimeter semiconductor region. The test structure includes an electrically conductive path mounted on the perimeter surface area. The test structure is configured to extract energy from a remotely generated electromagnetic radio frequency test field.

Contactless damage inspection of perimeter region of semiconductor device

Representative implementations of devices and techniques provide a high-voltage device on a semiconductor substrate. An insulating polymer layer is formed on an opposite surface to the high-voltage device, the insulating polymer layer having a thickness of at least twice that of the semiconductor substrate.

Lateral transistor on polymer

One or more embodiments relate to a method for forming a semiconductor structure, including: forming a semiconductor layer; and forming a dielectric layer over a back side of said semiconductor layer. In one or more embodiments, the dielectric layer may be a silicone rubber layer.

Semiconductor structure and method for making same

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Krumpendorf, Austria

Eric Graetz