Samsung Electronics Co., Ltd.

Hewlett Packard Enterprise Development LP

Qspeed Semiconductor Inc.

Aruba Networks, Inc.

Lovoltech, Incorporated

Eric Earl Johnson

Jianzhong Zhang

Richard Francis

Yang Yu Fan

Eldad Perahia

Jian Li

Vikram Chandrasekhar

Ho-Yuan Yu

Jianhua Mo

Hao Chen

Wenxun Qiu

Yongseok Park

Abhishek Sehgal

Khuong N Nguyen

Namjoon Park

Russell Douglas Ford

Matthew Tonnemacher

Jihoon Sung

Junyeop Jung

Pranav Madadi

In-sick Jung

Timothy L Virgo

Chuck Lukaszewski

Jefferson Nathan Lee

Travis J Feuling

Todd E Barkalow

John Wensowitch

Hy Hoang

Shan Jin

A method for discovering and diagnosing network anomalies. The method includes receiving key performance indicator (KPI) data and alarm data. The method includes extracting features based on samples obtained by discretizing the KPI data and the alarm data. The method includes generating a set of rules based on the features. The method includes identifying a sample as a normal sample or an anomaly sample. In response to identifying the sample as the anomaly sample, the method includes identifying a first rule that corresponds to the sample, wherein the first rule indicates symptoms and root causes of an anomaly included in the sample. The method further includes applying the root causes to derive a root cause explanation of the anomaly and performing a corrective action to resolve the anomaly based on the first rule.

Root cause analysis and automation using machine learning

A method of an electronic device for a connection management is provided. The method comprises: establishing a communication link with an access point (AP); receiving a triggering indication based on link information measured by the electronic device; determining a quality of the communication link between the electronic device and the AP based on the received triggering indication; comparing, based on the determined quality of the communication link, at least two Q values fetched from a Q table that is determined according to context in which in the electronic device is being used; setting a quantized aggressive index (QAI) value based on the compared at least two Q values; and generating a disconnection command based on the QAI value, wherein the disconnection command is a physical disconnection command or a virtual disconnection command of the communication link between the electronic device and the AP.

Method and apparatus for intelligent WiFi connection management

Systems and methods for wake up signaling in 802.11 DFS channels include enabling a primary connectivity radio of a device responsive to a wake up radio of the device receiving a composite radio signal transmitted by an access point in an 802.11 Dynamic Frequency Selection (DFS) channel, the composite radio signal comprising a wake up radio signal and a time-continuous signal, the time-continuous signal being substantially adjacent in frequency, but not necessarily contiguous in frequency, to the wake up radio signal; and exchanging data with the access point through the primary connectivity radio after the primary connectivity radio is enabled. The wake up radio signal may be an IEEE 802.11ba signal disposed in a center frequency band of a IEEE 802.11ax Physical Layer Convergence Protocol (PLCP) Protocol Data Unit (PPDU). The time-continuous signal may be real or emulated data traffic disposed in at least one IEEE 802.11ax resource unit.

Wake up signaling in 802.11 DFS channels

Example implementations relate to an antenna. In some examples, a system may comprise a radio, an antenna, and an enforcer. The antenna may be connected to the radio and the antenna may be non-functional until an enabling signal is received. The enforcer may modify the enabling signal in response to a determination whether a utilization of the antenna by the radio is permitted.

Antenna modulation based on attribute of an antenna, radio and/or incumbent transmitter signal

An exemplary embodiment of the present invention provides a method of generating a representation of a storage network. The method includes obtaining an request from a client system to view contents of a node in a tree model. The method also includes receiving tree information corresponding to the node and adding the tree information to the tree model.

Method and system for administration of storage objects

An apparatus and method for a fast recovery rectifier structure. Specifically, the structure includes a substrate of a first dopant. A first epitaxial layer lightly doped with the first dopant is coupled to the substrate. A first metallization layer is coupled to the first epitaxial layer. A plurality of trenches is recessed into the first epitaxial layer, each of which is coupled to the metallization layer. The device also includes a plurality of wells each doped with a second dopant type, wherein each well is formed beneath and adjacent to a corresponding trench. A plurality of oxide layers is formed on walls and a bottom of a corresponding trench. A plurality of channel regions doped with the first dopant is formed within the first epitaxial layer between two corresponding wells. Each of the plurality of channel regions is more highly doped with the first dopant than the first epitaxial layer.

Structure and method for a fast recovery rectifier structure

An ultrafast recovery diode. In a first embodiment, a rectifier device comprises a substrate of a first polarity, a lightly doped layer of the first polarity coupled to the substrate and a metallization layer disposed with the lightly doped layer. The ultrafast recovery diode includes a plurality of wells, separated from one another, formed in the lightly doped layer, comprising doping of a second polarity. The plurality of wells connect to the metallization layer. The ultrafast recovery diode further includes a plurality of regions, located between wells of said plurality of wells, more highly doped of the first polarity than the lightly doped layer.

Ultrafast recovery diode

A method for fabricating a junction field transistor for high-voltage applications. A lightly doped first epitaxial layer is formed on a highly doped substrate. A second epitaxial layer is deposited with a heavier dopant concentration than the first epitaxial layer. The second layer contains a control structure having a plurality of implanted gate regions and a source. A guard ring is formed to isolate the source and the control structure. The combination of the lightly doped first epitaxial layer and the guard ring enable the JFET to be operated with a breakdown voltage in excess of 100 volts. Multiple guard rings may be used to provide a breakdown voltage in excess of 150 volts.

Method and structure for a high voltage junction field effect transistor

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Colorado Springs, CO, United States of America

Eric Earl Johnson