Thomson-csf

Thomson Grand Public

Eric Chartier

Francois Boulitrop

Serge Le Berre

Bruno Mourey

Sylvain Delage

Nicolas Szydlo

Simone Cassette

Herve Blanck

Nicole Proust

Bernard Hepp

A semiconductor component that could be a power transistor type of component comprises mesa-structured elementary bipolar transistors. This component has a thick, metal heat sink of which a part (PI) takes the form of a bridge and a part is in contact with the substrate. The legs of the bridge lie on the entire unit constituted by the mesas. The heat sink made on the front face of the substrate may be connected to the rear face of the substrate comprising a ground plate. The discharging of the heat is thus appreciably fostered.

Semiconductor component with integrated heat sink

Electro-optical display panel with control transistors and method for

In a light image detector, a substrate is covered with a first layer of conductive material on which is formed a two-dimensional matrix array of photodiodes in the form of pads arranged in rows and columns and each comprising a layer of amorphous semiconductor material doped with a predetermined type (n-type or p-type), a layer of undoped amorphous semiconductor material, a layer of amorphous semiconductor material doped with another predetermined type (n-type or p-type), a second layer of conductive material, each photodiode being insulated from adjacent photodiodes by means of insulating material. On the insulating material, columns of material are disposed along the columns of photodiodes and are each formed by a layer of metallic material and a layer of doped amorphous semiconductor material. Connection elements are each connected to a photodiode through the layer of conductive material of the photodiode, are located in proximity to a column and each formed by a layer of metallic material and a layer of doped amorphous semiconductor material. Rows of material are disposed along the lines of photodiodes and overlap the columns as well as at least one connection element at each point of intersection of a row and a column. Each row is formed by a layer of undoped amorphous semiconductor material, an insulating layer and a layer of metallic material.

Method of fabrication of a light image detector and a two-dimensional

A method of fabrication of a control transistor for a flat-panel display screen involves the following steps:

Method of fabrication of a control transistor for a flat-panel display

Growing community of inventors

Chatenay Malabry, France

Eric Chartier