Soitec

Eric Butaud

Oleg Kononchuk

Eric Desbonnets

Arnaud Castex

Isabelle Bertrand

Alexis Drouin

Isabelle Huyet

Francois Boedt

Morgane Logiou

Olivier Ledoux

Roland Brun

Brice Tavel

Laurence Doutre-Roussel

A method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer, the method comprising the following steps: —preparing the support comprising forming the trapping layer on a base substrate, the trapping layer having a hydrogen concentration of less than 10{circumflex over ( )}18 at/cm{circumflex over ( )}; —joining the support to a donor substrate by way of a dielectric layer having a hydrogen concentration of less than 10{circumflex over ( )}20 at/cm{circumflex over ( )}3 or comprising a barrier preventing the diffusion of hydrogen toward the trapping layer or having low hydrogen diffusivity; —removing part of the donor substrate to form the thin layer; the manufacturing method exposing the structure to a temperature below a maximum temperature of 1000° C. The present disclosure also relates to a structure obtained at the end of this method.

Method for manufacturing a structure comprising a thin layer transferred onto a support provided with a charge trapping layer

The disclosure relates to a hybrid structure for a surface-acoustic-wave device comprising a useful layer of piezoelectric material joined to a carrier substrate having a thermal expansion coefficient lower than that of the useful layer; the hybrid structure comprising an intermediate layer located between the useful layer and the carrier substrate, the intermediate layer being a structured layer formed from at least two different materials comprising a plurality of periodic motifs in the plane of the intermediate layer.

Hybrid structure for a surface acoustic wave device

The invention relates to a process for manufacturing a semiconductor substrate, characterized in that it comprises providing at least one donor semiconductor substrate comprising at least one useful silicon layer; inspecting the donor substrate via an inspecting machine in order to detect whether the useful layer contains emerging cavities of a size larger than or equal to a critical size, said critical size being strictly smaller than 44 nm; and manufacturing a semiconductor substrate comprising at least part of the useful layer of the donor substrate if, considering cavities of a size larger than or equal to the critical size, the density or number of cavities in the useful layer of the donor substrate is lower than or equal to a critical defect density or number.

Process for manufacturing a semiconductor substrate, and semiconductor substrate obtained

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Grenoble, France

Eric Butaud