Asml Holding N.v.

Asml Netherlands B.v.

Silicon Valley Group, Inc.

Eric Brian Catey

Yevgeniy Konstantinovich Shmarev

Adel Joobeur

Stanislav Y Smirnov

Richard Jacobs

Harry Sewell

Igor Matheus Petronella Aarts

Robert Tharaldsen

Heine Melle Mulder

Santiago E Del Puerto

Haico Victor Kok

Lev Ryzhikov

Roberto B Wiener

Hendrikus Robertus Marie Van Greevenbroek

Michael L Nelson

Richard Carl Zimmerman

Alexander Kremer

Kevin J Violette

Nora-Jean Harned

Stephen Roux

David A Hult

Irit Tzemah

David Heald

John David Connelly

Robert Anthony Augelli

David Hult

Sergey Malyk

A method of applying a measurement correction includes calculating a first correction value based on a first coefficient and the measurement; calculating a second correction value based on a second coefficient, greater than the first coefficient, and the measurement; and calculating a third correction value based on a third coefficient, greater than the second coefficient, and the measurement. The method also includes applying the third correction value to the measurement if a difference between the first correction value and the third correction value is above a first threshold value; applying the second correction value to the measurement if a difference between the first correction value and the second correction value is above a second threshold value; and applying the first correction value to the measurement if the difference between the first correction value and the second correction value is below or equal to the second threshold value.

Adaptive filter for in-line correction

A lithographic cluster includes a track unit and a lithographic apparatus. The lithographic apparatus includes an alignment sensor and at least one controller. The track unit is configured to process a first lot and a second lot. The lithographic apparatus is operatively coupled to the track unit. The alignment sensor is configured to measure an alignment of at least one alignment mark type of a calibration wafer. At least one controller is configured to determine a correction set for calibrating the lithographic apparatus based on the measured alignment of the at least one alignment mark type and apply first and second weight corrections to the correction set for processing the first and second lots, respectively, such that overlay drifts or jumps during processing the first and second lots are mitigated.

Lithographic cluster, lithographic apparatus, and device manufacturing method

A method, including printing an apparatus mark onto a structure while the structure is at least partly within a lithographic apparatus. The structure may be part of, or is located on, a substrate table, but is separate from a substrate to be held by the apparatus. The method further includes measuring the apparatus mark using a sensor system within the apparatus.

Measurement method comprising in-situ printing of apparatus mark and corresponding apparatus

An inspection apparatus includes an illumination system that receives a first beam and produces second and third beams from the first beam and a catadioptric objective that directs the second beam to reflect from a wafer. A first sensor detects a first image created by the reflected second beam. A refractive objective directs the third beam to reflect from the wafer, and a second sensor detects a second image created by the reflected third beam. The first and second images can be used for CD measurements. The second beam can have a spectral range from about 200 nm to about 425 nm, and the third beam can have a spectral range from about 425 nm to about 850 nm. A third sensor may be provide that detects a third image created by the third beam reflected from the wafer. The third image can be used for OV measurements.

Inspection apparatus, lithographic apparatus, and device manufacturing method

Disclosed are apparatuses, methods, and lithographic systems for EUV mask inspection. An EUV mask inspection system can include an EUV illumination source, an optical system, and an image sensor. The EUV illumination source can be a standalone illumination system or integrated into the lithographic system, where the EUV illumination source can be configured to illuminate an EUV radiation beam onto a target portion of a mask. The optical system can be configured to receive at least a portion of a reflected EUV radiation beam from the target portion of the mask. Further, the image sensor can be configured to detect an aerial image corresponding to the portion of the reflected EUV radiation beam. The EUV mask inspection system can also include a data analysis device configured to analyze the aerial image for mask defects.

EUV mask inspection system

A mask inspection system with Fourier filtering and image compare can include a first detector, a dynamic Fourier filter, a controller, and a second detector. The first detector can be located at a Fourier plane of the inspection system and can detect a first portion of patterned light produced by an area of a mask. The dynamic Fourier filter can be controlled by the controller based on the detected first portion of the patterned light. The second detector can detect a second portion of the patterned light produced by the section of the mask and transmitted through the dynamic Fourier filter. Further, the mask inspection system can include a data analysis device to compare the second portion of patterned light with another patterned light. Consequently, the mask inspection system is able to detect any possible defects on the area of the mask more accurately and with higher resolution.

Mask inspection with fourier filtering and image compare

Disclosed are systems and methods for time differential reticle inspection. Contamination is detected by, for example, determining a difference between a first signature of at least a portion of a reticle and a second signature, produced subsequent to the first signature, of the portion of the reticle.

Time differential reticle inspection

Disclosed are high numerical (NA) catadioptric objectives without a central obscuration, and applications thereof. Such objectives can operate through a wide spectral bandwidth of radiation, including deep ultraviolet (DUV) radiation. Importantly, refractive elements in the catadioptric objectives can be manufactured from a single type of material (such as, for example, CaFand/or fused silica). In addition, the elements of such catadioptric objectives are rotationally symmetric about an optical axis. The catadioptric objectives eliminate the central obscuration by (1) using a polarized beamsplitter (which passes radiation of a first polarization and reflects radiation of a second polarization), and/or (2) using one or more folding mirrors to direct off-axis radiation into the pupil of the catadioptric objective. An example catadioptric objective is shown in FIG.

High numerical aperture catadioptric objectives without obscuration and applications thereof

A method and systems for reticle inspection. The method includes coherently illuminating surfaces of an inspection reticle and a reference reticle, applying a Fourier transform to scattered light from the illuminated surfaces, shifting the phase of the transformed light from the reference reticle such that a phase difference between the transformed light from the inspection reticle and the transformed light from the reference reticle is 180 degrees, combining the transformed light as an image subtraction, applying an inverse Fourier transform to the combined light, and detecting the combined light at a detector. An optical path length difference between two optical paths from the illumination source to the detector is less than a coherence length of the illumination source. The image detected by the detector represents a difference in amplitude and phase distributions of the reticles allowing foreign particles, defects, or the like, to be easily distinguished.

Reticle inspection systems and method

A system and method for uniformity correction is provided. The system includes a plurality of winged correction elements inserted into the illumination field in a defined configuration. Adjacent winged correction elements are overlapped to minimize induced uniformity ripple. Each winged correction element has a first protrusion on a longitudinal edge of the correction element and a second protrusion on the opposite longitudinal edge. The slope of a sloped edge of the first protrusion and the slope of a sloped edge of the second protrusion are tied to the slope of a gradient in the non-uniformity profile of the illumination field. In addition, the angles defined by the flat tip of the correction element and the sloped edge of the first and second protrusions are tied to the angle of a gradient of the illumination field.

System and method for uniformity correction

A removable cover for protecting a reticle used in a lithography system is described. The removable cover includes a frame and a membrane supported by the frame. The membrane is transparent to an inspection wavelength such that the reticle can be inspected with the removable cover in place. This removable cover protects the reticle when the removable cover is in place and is removable for lithographic exposure. The removable cover can further include at least one reticle fastener that applies force to the reticle thereby preventing movement of the removable cover relative to the reticle when the removable cover is in place. A plurality of fasteners are used to position and secure the removable cover and reticle. A method of performing lithography and a lithographic system are also described.

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Danbury, CT, United States of America

Eric Brian Catey